Wafer‐Scale Nanoimprint Lithography Process Towards Complementary Silicon Nanowire Field‐Effect Transistors for Biosensor Applications

Müller, Achim; Vu, Xuan Thang; Pachauri, Vivek; Francis, Laurent; Flandre, Denis; Ingebrandt, Sven

doi:10.1002/pssa.201800234

Cited by 11 publications

(18 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…27 Depending on the dimensions of the SiO 2 hard mask, which we used in our processes, we got different values for absolute threshold voltages of the Si NW-ISFET sensors (compare Figures 2 and 4). 68 Nanowire structures comprise highly p-doped individual drains and a common source contact, which are etched out of the top silicon layer of the SOI wafers. The nanowire regions of typically 15 μm length and 100–200 nm width are left intrinsic and depending on the thickness of the silicon (40–60 nm) are either fully or partly depleted, which leads to the accumulation type transistor characteristics.…”

Section: Materials and Methodsmentioning

confidence: 99%

“…The etching profile results in trapezoid cross sections, 69 which are covered by a thin SiO 2 gate oxide of 6–8 nm in an almost wrapped around gate structure, which is partly still in contact with the BOX supporting the mechanic stability and giving the possibility for back gating. Typically, we fabricate devices with subthreshold swings of 100–120 mV/dec, 68 which is far away from the ideal values of about 60 mV/dec. Most likely, the quality of the gate oxide could be further improved by annealing in forming gas to decrease the subthreshold slope values.…”

Section: Materials and Methodsmentioning

confidence: 99%

“…Over the past years we opimized the fabrication process in different steps and published these protocols earlier. 27,68−71…”

Section: Materials and Methodsmentioning

confidence: 99%

See 2 more Smart Citations

Top-Down Fabricated Silicon Nanowire Arrays for Field-Effect Detection of Prostate-Specific Antigen

et al. 2018

Self Cite

View full text Add to dashboard Cite

Highly sensitive electrical detection of biomarkers for the early stage screening of cancer is desired for future, ultrafast diagnostic platforms. In the case of prostate cancer (PCa), the prostate-specific antigen (PSA) is of prime interest and its detection in combination with other PCa-relevant biomarkers in a multiplex approach is advised. Toward this goal, we demonstrate the label-free, potentiometric detection of PSA with silicon nanowire ion-sensitive field-effect transistor (Si NW-ISFET) arrays. To realize the field-effect detection, we utilized the DNA aptamer-receptors specific for PSA, which were covalently and site-specifically immobilized on Si NW-ISFETs. The platform was used for quantitative detection of PSA and the change in threshold voltage of the Si NW-ISEFTs was correlated with the concentration of PSA. Concentration-dependent measurements were done in a wide range of 1 pg/mL to 1 μg/mL, which covers the clinical range of interest. To confirm the PSA–DNA aptamer binding on the Si NW surfaces, a sandwich-immunoassay based on chemiluminescence was implemented. The electrical approach using the Si NW-ISFET platform shows a lower limit of detection and a wide dynamic range of the assay. In future, our platform should be utilized to detect multiple biomarkers in one assay to obtain more reliable information about cancer-related diseases.

show abstract

Section: Materials and Methodsmentioning

confidence: 99%

Section: Materials and Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Top-Down Fabricated Silicon Nanowire Arrays for Field-Effect Detection of Prostate-Specific Antigen

et al. 2018

Self Cite

View full text Add to dashboard Cite

show abstract

“…An ultra-thin layer of oxide was grown on top of the SiNW to create the gate dielectric layer. A thick passivation layer was deposited on the source and the drain contact to enable the device to work reliably when interfacing with the liquid environment [ 6 , 13 , 22 , 25 , 26 , 27 , 28 , 29 , 30 ]. Each fabrication step induces variations that may alter the electronic characteristic from device to device.…”

Section: Introductionmentioning

confidence: 99%

Process Variability in Top-Down Fabrication of Silicon Nanowire-Based Biosensor Arrays

Tintelott

Pachauri

Ingebrandt

et al. 2021

Sensors

Self Cite

View full text Add to dashboard Cite

Silicon nanowire field-effect transistors (SiNW-FET) have been studied as ultra-high sensitive sensors for the detection of biomolecules, metal ions, gas molecules and as an interface for biological systems due to their remarkable electronic properties. “Bottom-up” or “top-down” approaches that are used for the fabrication of SiNW-FET sensors have their respective limitations in terms of technology development. The “bottom-up” approach allows the synthesis of silicon nanowires (SiNW) in the range from a few nm to hundreds of nm in diameter. However, it is technologically challenging to realize reproducible bottom-up devices on a large scale for clinical biosensing applications. The top-down approach involves state-of-the-art lithography and nanofabrication techniques to cast SiNW down to a few 10s of nanometers in diameter out of high-quality Silicon-on-Insulator (SOI) wafers in a controlled environment, enabling the large-scale fabrication of sensors for a myriad of applications. The possibility of their wafer-scale integration in standard semiconductor processes makes SiNW-FETs one of the most promising candidates for the next generation of biosensor platforms for applications in healthcare and medicine. Although advanced fabrication techniques are employed for fabricating SiNW, the sensor-to-sensor variation in the fabrication processes is one of the limiting factors for a large-scale production towards commercial applications. To provide a detailed overview of the technical aspects responsible for this sensor-to-sensor variation, we critically review and discuss the fundamental aspects that could lead to such a sensor-to-sensor variation, focusing on fabrication parameters and processes described in the state-of-the-art literature. Furthermore, we discuss the impact of functionalization aspects, surface modification, and system integration of the SiNW-FET biosensors on post-fabrication-induced sensor-to-sensor variations for biosensing experiments.

show abstract

“…Several different approaches can be found for nanoimprinting, being the main ones thermal NIL and UV NIL. In recent years a strong industrially-driven research can be observed, pushing NIL and its applications from purely academic purposes to innovations in data storage, point of care diagnostics, electronic and graphene devices or augmented reality [ 4 , 5 , 6 , 7 , 8 , 9 ]. With this shift, new materials need to be developed with properties that are compatible with mass production: fast curing and imprinting, robustness, reproducibility, and patterning on flexible substrates, both, at the micro and nano scale.…”

Section: Introductionmentioning

confidence: 99%

Development, Processing and Applications of a UV-Curable Polymer with Surface Active Thiol Groups

et al. 2020

View full text Add to dashboard Cite

We present here a novel resist formulation with active thiol groups at the surface. The material is UV curable, and can be patterned at the micro- and nanoscale by UV nanoimprint lithography. The resist formulation development, its processing, patterning and surface characterization are presented here. In addition, a possible application, including its use to modify the electrical properties of graphene devices is shown. The cured material is highly transparent, intrinsically hydrophilic and can be made more hydrophilic following a UV-ozone or an O2 plasma activation. We evaluated the hydrophilicity of the polymer for different polymer formulations and curing conditions. In addition, a protocol for patterning of the polymer in the micro and nanoscale by nanoimprinting is given and preliminary etching rates together with the polymer selectivity are measured. The main characteristic and unique advantage of the polymer is that it has thiol functional groups at the surface and in the bulk after curing. These groups allow for direct surface modifications with thiol-based chemistry e.g., thiol-ene reactions. We prove the presence of the thiol groups by Raman spectroscopy and perform a thiol-ene reaction to show the potential of the easy “click chemistry”. This opens the way for very straightforward surface chemistry on nanoimprinted polymer samples. Furthermore, we show how the polymer improves the electrical properties of a graphene field effect transistor, allowing for optimal performance at ambient conditions.

show abstract

Wafer‐Scale Nanoimprint Lithography Process Towards Complementary Silicon Nanowire Field‐Effect Transistors for Biosensor Applications

Cited by 11 publications

References 35 publications

Top-Down Fabricated Silicon Nanowire Arrays for Field-Effect Detection of Prostate-Specific Antigen

Top-Down Fabricated Silicon Nanowire Arrays for Field-Effect Detection of Prostate-Specific Antigen

Process Variability in Top-Down Fabrication of Silicon Nanowire-Based Biosensor Arrays

Development, Processing and Applications of a UV-Curable Polymer with Surface Active Thiol Groups

Contact Info

Product

Resources

About