Wafer-scale modeling of pattern effect in oxide chemical mechanical polishing

Ouma, Dennis; Stine, B.E.; Divecha, R.; Boning, Duane S.; Chung, J.E.; Shinn, G.; Ali, Iqbal; Clark, John

doi:10.1117/12.284597

Cited by 8 publications

(5 citation statements)

References 8 publications

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“…Both erosion and dishing result in surface nonplanarity and thickness variation of metal interconnects across a die area. [1][2][3][4] Dishing and erosion rates may be estimated by an extended version of the Preston equation dh dt ϭ k p ͑ x, y ͒p av ͑w, A f , t*, ...͒v R ͓1͔…”

mentioning

confidence: 99%

Evolution of Copper-Oxide Damascene Structures in Chemical Mechanical Polishing

Lai

Saka

Chun

2002

J. Electrochem. Soc.

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Test wafers comprising damascene structures were designed and fabricated to investigate Cu dishing and oxide erosion. The mask design covered a wide range of linewidths and pitches, from 0.5 to 100 m, to represent such features as signal and power transmission lines, and probing or wire-bonding pads. Experiments were conducted to investigate the evolution of the pattern profile during polishing and to determine the onset and rates of dishing and erosion. The effects of Cu linewidth and area fraction on the rates of pattern planarization, Cu dishing, and oxide erosion have been quantified. The effect of hardness of the composite surface on dishing and erosion were examined. An optimization scheme, employing particle size, particle hardness, and pad stiffness, to enhance the selectivity between SiO 2 , Ta, and Cu, and to reduce die-scale nonplanarity is proposed.

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confidence: 99%

Evolution of Copper-Oxide Damascene Structures in Chemical Mechanical Polishing

Lai

Saka

Chun

2002

J. Electrochem. Soc.

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“…Further modeling of the CMP variation can account for the variation of oxide thickness across the wafer (24), as well as other second order polishing effects (26). An important result for multilevel metal modeling is that if the oxide is polished through to "local planarity" then each level of oxide (e.g.…”

Section: Semi-physical Model Calibrationmentioning

confidence: 99%

Statistical metrology—measurement and modeling of variation for advanced process development and design rule generation

Boning¹,

Chung²

1998

The 1998 International Conference on Characterization and Metrology for ULSI Technology

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“…16,29,30 Additionally, Boning et al has provided a number of computational modeling methods for characterization of pattern wafer polishing processes. 19,21,[31][32][33][34][35][36][37] However, the basis of these models is on contact between the pad-wafer interface and are built off of Preston's equations. As such, the models don't fully account for slurry chemistry and its effect on the process.…”

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confidence: 99%

Tribological, Thermal and Kinetic Characterization of SiO₂and Si₃N₄Polishing for STI CMP on Blanket and Patterned Wafers

Mariscal

McAllister

Sampurno

et al. 2020

ECS J. Solid State Sci. Technol.

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We investigated the tribological, thermal and kinetic aspects of SiO2 and Si3N4 polishing on blanket and patterned wafers for STI CMP. Results showed the absence of anomalous tribological vibrational behaviors thanks to synergies between the colloidal CeO2-based slurry and application-specific conditioner. Removal rates for the two processes showed non-Prestonian behavior as both mechanical and chemical factors were at work. However, Si3N4 was much more non-Prestonian than SiO2. As expected, Si3N4 polishing resulted in COFvalues that were approximately one-half of their SiO2 counterparts resulting in high SiO2-Si3N4 removal rate selectivity. A modified Langmuir-Hinshelwood model was used to simulate removal rates allowing us to conclude that the process was mechanically-limited for SiO2 and highly chemically-limited for Si3N4. Patterned wafer polishing time traces showed that COFcould be utilized as a real-time indicator for end-point detection and that, after 6 min of polishing, we observed the total removal of SiO2 with a hard stop on Si3N4. End-points reached were also consistent with our blanket wafer polishing data. Regardless of pattern density and pitch, SiO2 removed was not proportional to polish time. This was a result of the low colloidal ceria nano-particle content in the slurry which was explained via a phenomenological model.

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Wafer-scale modeling of pattern effect in oxide chemical mechanical polishing

Cited by 8 publications

References 8 publications

Evolution of Copper-Oxide Damascene Structures in Chemical Mechanical Polishing

Evolution of Copper-Oxide Damascene Structures in Chemical Mechanical Polishing

Statistical metrology—measurement and modeling of variation for advanced process development and design rule generation

Tribological, Thermal and Kinetic Characterization of SiO₂and Si₃N₄Polishing for STI CMP on Blanket and Patterned Wafers

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Wafer-scale modeling of pattern effect in oxide chemical mechanical polishing

Cited by 8 publications

References 8 publications

Evolution of Copper-Oxide Damascene Structures in Chemical Mechanical Polishing

Evolution of Copper-Oxide Damascene Structures in Chemical Mechanical Polishing

Statistical metrology—measurement and modeling of variation for advanced process development and design rule generation

Tribological, Thermal and Kinetic Characterization of SiO2and Si3N4Polishing for STI CMP on Blanket and Patterned Wafers

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Tribological, Thermal and Kinetic Characterization of SiO₂and Si₃N₄Polishing for STI CMP on Blanket and Patterned Wafers