2023
DOI: 10.1364/ol.494949
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Wafer-scale inverted gallium phosphide-on-insulator rib waveguides for nonlinear photonics

Abstract: We report a gallium phosphide-on-insulator (GaP-OI) photonic platform fabricated by an intermediate-layer bonding process aiming to increase the manufacture scalability in a low-cost manner. This is enabled by the “etch-n-transfer” sequence, which results in inverted rib waveguide structures. The shallow-etched 1.8 µm-wide waveguide has a propagation loss of 23.5 dB/cm at 1550 nm wavelength. Supercontinuum generation based on the self-phase modulation effect is observed when the waveguides are pumped by femtos… Show more

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Cited by 4 publications
(3 citation statements)
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“…On the contrary, the |𝛽| of TM30 drops due to a reduction of mode intensity as the waveguide cross-section enlarges. Finally, the waveguide geometry is set to be a Wwg × Hwg = 555 nm × 600 nm as a comprise of the optimization results and the availability of our GaP epitaxial wafer film stack [14].…”
Section: Modal Overlap For Second-harmonic Generation and Sum Frequen...mentioning
confidence: 99%
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“…On the contrary, the |𝛽| of TM30 drops due to a reduction of mode intensity as the waveguide cross-section enlarges. Finally, the waveguide geometry is set to be a Wwg × Hwg = 555 nm × 600 nm as a comprise of the optimization results and the availability of our GaP epitaxial wafer film stack [14].…”
Section: Modal Overlap For Second-harmonic Generation and Sum Frequen...mentioning
confidence: 99%
“…Among them, gallium phosphide (GaP) stands out due to its intriguing nonlinear and linear optical properties [13]. GaP has a conspicuous third-order nonlinearity with n2 = 1.9×10 -17 m 2 W -1 [14] and an intrinsic second-order nonlinearity with d36 = 41 pm/V at 1550 nm [15]. Besides, two-photon absorption can be neglected above 1.1 μm, which renders high power pump in the entire telecommunication bands possible.…”
Section: Introductionmentioning
confidence: 99%
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