Wafer-scale integration of GaAs/AlGaAs core–shell nanowires on silicon by the single process of self-catalyzed molecular beam epitaxy

Minehisa, Keisuke; Murakami, Ryo; Hashimoto, H; Nakama, Kaito; Sakaguchi, Kenta; Tsutsumi, Rikuo; Tanigawa, Takeru; Yukimune, Mitsuki; Nagashima, Kazuki; Yanagida, Takeshi; Sato, Shino; Hiura, Satoshi; Murayama, Akihiro; Ishikawa, Fumitaro

doi:10.1039/d2na00848c

Cited by 4 publications

(1 citation statement)

References 54 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[107] In recent years, III-V semiconductor nanowires, which emerged as promising optoelectronics (for example, solar cells, photodetectors, and LEDs), have attracted much attention because of their direct and suitable bandgap, inherent high optical absorption, minimized light reflection, flexibility in device design, efficient charge collection in the radial direction. [63,[108][109][110][111][112][113] There has been considerable research on III-V nanowire-based RJ devices, such as GaAs/AlGaAs coreshell, [61,62,114,115] InAs/InAlAs core-shell, [116][117][118] and so on. Such III-V nanowire-based RJ structures are potential candidates for fabricating flexible sensors to be incorporated in skin patches or integrated onto clothes.…”

Section: Introductionmentioning

confidence: 99%

3D Radial Junctions for Robust and Flexible Optoelectronics

Zhang,

2024

Advanced Optical Materials

View full text Add to dashboard Cite

Marrying nanostructures with thin films is a recent trend in flexible optoelectronics to improve light trapping and mechanical stability. Radial junction (RJ) a‐Si:H thin film optoelectronics, directly deposited upon the vapor‐liquid‐solid (VLS) grown silicon nanowires (SiNWs), can pave the way to achieving excellent flexibility and a high power‐to‐weight ratio (PTWR). Thanks to their vertical‐standing geometry, SiNWs framework can enhance the mechanical stability of RJ units, by keeping the working region far away from the stress‐rich substrate surface. Using low‐melting‐point metals as catalysts, the SiNW array can be fabricated at a low temperature down to 350 °C in a PECVD system, making it possible to directly construct robust RJ units on flexible, low‐cost substrates, such as Al foil. In this review, the recent progress of the flexible RJ a‐Si:H thin film solar cells/photodetectors that are directly fabricated on the surface of low‐cost flexible substrates is reviewed. Moreover, these RJ flexible optoelectronics are demonstrated for use in wearable and real‐time health monitoring, and as cardiac pacemakers for heart stimulation. This RJ technology highlights a promising potential to establish high‐performance, low‐cost, mechanically stable flexible optoelectronic for wearable, portable applications.

show abstract

Section: Introductionmentioning

confidence: 99%

3D Radial Junctions for Robust and Flexible Optoelectronics

Zhang,

2024

Advanced Optical Materials

View full text Add to dashboard Cite

show abstract

Rolled‐Up Membranes from GaAs/AlOx Core‐Shell Nanowire Ensembles Through Natural Oxidation

Hashimoto,

Minehisa,

Nakama

et al. 2024

Advanced Optical Materials

View full text Add to dashboard Cite

The formation of rolled‐up cylindrical membranes stemming from the strain deformation‐induced delamination of a film‐like nanowires array composed of coalesced GaAs nanowires embedded in AlOx with a buried GaAs/AlAs core‐shell structure is reported. The delamination of the nanowires array film is driven by natural oxidation resulting from prolongated exposure to ambient atmosphere. Investigation of the structural characteristics of the nanowires in the array reveals an analytical description of the oxidation mechanism leading to the formation of the rolled‐up structures. The membrane can easily transfer by simply shaking off the surface membranes of the sample. The cylindrical membranes maintain the optical properties of the core GaAs nanowires surrounded by native oxide. The findings show the prospects for area‐saving and transferable semiconductor devices with advanced nanoscale optical functions.

show abstract

Homogeneous Large-Scale Synthesis of GaAs/GaInNAs/GaAs Nanowires on a Si Wafer for Devices Operating in the Near-Infrared Region

Minehisa,

Nakama,

Hashimoto

et al. 2024

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

The synthesis of semiconductor nanowires (NWs) with near-infrared light-absorbing and light-emission properties is presented. Gallium (Ga)-induced vapor−liquid−solid growth is used to produce GaAs/GaInNAs/GaAs core−multishell NWs on a 2 in. Si(111) wafer using plasma-assisted molecular beam epitaxy. The GaInNAs shell consists of 11% indium (In) and varying compositions of nitrogen (N) of up to 1.9%. The NWs serve as an antireflective material, showing that the entire substrate is black. Photoluminescence measurements at room temperature validate the expansion of the operating wavelength into the near-infrared region as the N content in the NWs increases. The GaInNAs sample with 11% In and 1.2% N shows homogeneous luminescence at 1100 nm across the entire 2 in. Si substrate. The reflectance of the NW samples is low, less than 2%, and the absorption edge can be controlled by modifying the composition of In and N indicating the potential application of large-scale photoelectric conversion, such as solar cells.

show abstract

Wafer-scale integration of GaAs/AlGaAs core–shell nanowires on silicon by the single process of self-catalyzed molecular beam epitaxy

Abstract: GaAs/AlGaAs core-shell nanowires with AlGaOx outermost shell layer, typically having 250 nm diameter and 7 µm length, were grown on 2-inch Si wafer by the single process of molecular beam...

Cited by 4 publications

References 54 publications

3D Radial Junctions for Robust and Flexible Optoelectronics

3D Radial Junctions for Robust and Flexible Optoelectronics

Rolled‐Up Membranes from GaAs/AlOx Core‐Shell Nanowire Ensembles Through Natural Oxidation

Homogeneous Large-Scale Synthesis of GaAs/GaInNAs/GaAs Nanowires on a Si Wafer for Devices Operating in the Near-Infrared Region

Contact Info

Product

Resources

About