Wafer-scale integration of antimonide-based MWIR FPAs

Gurga, Alex; Tang, Yan; Terterian, Sevag; Chen, Mary; Carrasco, Diego E.; Jenkins, James R.; Wang, Shuoqin; Lyon, Terry De; Allali, Choukri; Hollingsworth, Allen; Curzan, J. P.; Caulfield, John; Dhawan, Nishant; Korth, W. Z.; Nguyen, Binh‐Minh

doi:10.1117/12.2588311

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“…The relatively high cost associated with the required cooling and serial processing of die-level hybridisation is a major barrier to bringing large-volume of low-cost products to market. To reduce manufacturing costs and increase array scaling, DARPA has launched a programme (called WIRED programme) to develop wafer-level integration for the production of large-format antimonide-based MWIR detectors on Si ROICs [139].…”

Section: Novel Iii-v Arrays Based On Type-ii Superlatticesmentioning

confidence: 99%

“…The bonding process is inhibited by the maximum thermal budget of the ROIC wafer. According to [139], the maximum thermal budget of CMOS wafers is estimated to be 425 • C for 2-6 h or 400 • C for 8-10 h without chip degradation. Also, the thermal expansion mismatch and the temperature difference between the bonding temperature and the cryogenic operating temperature cause significant stresses in the active detector region.…”

Section: Novel Iii-v Arrays Based On Type-ii Superlatticesmentioning

confidence: 99%

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Scaling infrared detectors—status and outlook

Rogalski

2022

Rep. Prog. Phys.

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The predicted “Law 19” benchmark for HgCdTe photodiode performance established in 2019 is a milestone in the development of infrared detectors and make the dream of Elliott and colleagues, who in 1999 wrote that there is no fundamental obstacle to obtaining room temperature operation of photon detectors at room temperature with background-limited performance even in reduced fields of view [C.T. Elliott et al., Appl. Phys. Lett. 74(9), 2881 (1999)]. This circumstance will make it possible to achieve in the near future the room-temperature infrared (IR) arrays operation with high pixel density (small pixels) fully compatible with the background and diffraction-limited performance resulting from the system optics. The advent of smaller pixels also results in superior spatial and temperature resolutions of imaging systems. In megapixel imaging systems, the pixel dimension plays a crucial role in determining critical system attributes such as system size, weight, and power consumption (SWaP). In the paper, the physical limitations of pixel size related to the aperture of the optics, which in turn is wavelength dependent, are described. Since the critical parameter of small pixels is quantum efficiency, more attention has been paid to enhancing the coupling of radiation to the detector. Then, the evaluation for assessing the figure-of-merit of different material systems (especially short wavelength IR colloidal quantum dots, both medium and long wavelength IR novel III-V material systems) relative to bulk HgCdTe alloys is considered. Of the various thermal detectors, particular attention has been focused on bolometer arrays due to their largest share of the global commercial market. Also key challenges in realizing ultimate pixel dimensions in focal plane arrays (FPAs) design are presented for different material systems including dark current, pixel hybridization, pixel delineation, and unit cell readout capacity.

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Section: Novel Iii-v Arrays Based On Type-ii Superlatticesmentioning

confidence: 99%

Section: Novel Iii-v Arrays Based On Type-ii Superlatticesmentioning

confidence: 99%