Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium

Lee, Jae-Hyun; Lee, Eun Kyung; Joo, Won-Jae; Jang, Yamujin; Kim, Byung‐Sung; Lim, Jae Young; Choi, Soon-Hyung; Ahn, Sung Joon; Ahn, Joung Real; Park, Min‐Ho; Yang, Cheol‐Woong; Choi, Byoung Lyong; Hwang, Sungwoo; Whang, Dongmok

doi:10.1126/science.1252268

Cited by 837 publications

(864 citation statements)

References 32 publications

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“…43 In comparison to the CVD-grown single-crystal graphene, we suggest in this report that single-crystal h-BNC (or graphene) can be also grown on a SiC substrate. The maximum size of a commercial Si wafer is much larger than that of a commercial SiC wafer.…”

Section: Resultsmentioning

confidence: 83%

Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene Layer on a Wide-Band Gap Semiconductor

et al. 2015

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Vertical and lateral heterogeneous structures of two-dimensional (2D) materials have paved the way for pioneering studies on the physics and applications of 2D materials. A hybridized hexagonal boron nitride (h-BN) and graphene lateral structure, a heterogeneous 2D structure, has been fabricated on single-crystal metals or metal foils by chemical vapor deposition (CVD).However, once fabricated on metals, the h-BN/graphene lateral structures require an additional transfer process for device applications, as reported for CVD graphene grown on metal foils. Here, we demonstrate that a single-crystal h-BN/graphene lateral structure can be epitaxially grown on a wide-gap semiconductor, SiC(0001). First, a single-crystal h-BN layer with the same orientation as bulk SiC was grown on a Si-terminated SiC substrate at 850 ℃ using borazine molecules.Second, when heated above 1150 ℃ in vacuum, the h-BN layer was partially removed and, subsequently, replaced with graphene domains. Interestingly, these graphene domains possess the same orientation as the h-BN layer, resulting in a single-crystal h-BN/graphene lateral structure on a whole sample area. For temperatures above 1600 ℃ , the single-crystal h-BN layer was completely replaced by the single-crystal graphene layer. The crystalline structure, electronic band structure, and atomic structure of the h-BN/graphene lateral structure were studied by using low energy electron diffraction, angle-resolved photoemission spectroscopy, and scanning tunneling microscopy, respectively. The h-BN/graphene lateral structure fabricated on a wide-gap semiconductor substrate can be directly applied to devices without a further transfer process, as reported for epitaxial graphene on a SiC substrate.

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Section: Resultsmentioning

confidence: 83%

Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene Layer on a Wide-Band Gap Semiconductor

et al. 2015

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“…Consequently, surface segregation of Si could increase and may result in surface carbide formation, whereas it was already demonstrated that unidirectional‐oriented islands coalesced to form single‐crystalline graphene on Ge (110) surfaces without grain boundary defects 14, 120. Recently, Jacobberger et al again demonstrated the direct APCVD growth of semiconducting armchair graphene NRs on Ge (001) wafers as demonstrated earlier.…”

Section: Catalyst‐free Direct Cvd Growth Of Graphene On Technologicalmentioning

confidence: 92%

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

et al. 2018

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To fabricate graphene based electronic and optoelectronic devices, it is highly desirable to develop a variety of metal‐catalyst free chemical vapor deposition (CVD) techniques for direct synthesis of graphene on dielectric and semiconducting substrates. This will help to avoid metallic impurities, high costs, time consuming processes, and defect‐inducing graphene transfer processes. Direct CVD growth of graphene on dielectric substrates is usually difficult to accomplish due to their low surface energy. However, a low‐temperature plasma enhanced CVD technique could help to solve this problem. Here, the recent progress of metal‐catalyst free direct CVD growth of graphene on technologically important dielectric (SiO2, ZrO2, HfO2, h‐BN, Al2O3, Si3N4, quartz, MgO, SrTiO3, TiO2, etc.) and semiconducting (Si, Ge, GaN, and SiC) substrates is reviewed. High and low temperature direct CVD growth of graphene on these substrates including growth mechanism and morphology is discussed. Detailed discussions are also presented for Si and Ge substrates, which are necessary for next generation graphene/Si/Ge based hybrid electronic devices. Finally, the technology development of the metal‐catalyst free direct CVD growth of graphene on these substrates is concluded, with future outlooks.

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“…The growth of large‐area high‐quality graphene films is fundamental for the upcoming graphene applications. Chemical vapour deposition (CVD) method offers good prospects to produce large‐size graphene films due to its simplicity, controllability and cost‐efficiency 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75. Many researches have verified that graphene can be catalytically grown on metallic substrates, like ruthenium (Ru),13, 14 iridium (Ir),15, 16 platinum (Pt),17, 18, …”

Section: Introductionmentioning

confidence: 99%

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Zhang

Qiu

et al. 2017

Advanced Science

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The exceptional properties of graphene make it a promising candidate in the development of next‐generation electronic, optoelectronic, photonic and photovoltaic devices. A holy grail in graphene research is the synthesis of large‐sized single‐crystal graphene, in which the absence of grain boundaries guarantees its excellent intrinsic properties and high performance in the devices. Nowadays, most attention has been drawn to the suppression of nucleation density by using low feeding gas during the growth process to allow only one nucleus to grow with enough space. However, because the nucleation is a random event and new nuclei are likely to form in the very long growth process, it is difficult to achieve industrial‐level wafer‐scale or beyond (e.g. 30 cm in diameter) single‐crystal graphene. Another possible way to obtain large single‐crystal graphene is to realize ultrafast growth, where once a nucleus forms, it grows up so quickly before new nuclei form. Therefore ultrafast growth provides a new direction for the synthesis of large single‐crystal graphene, and is also of great significance to realize large‐scale production of graphene films (fast growth is more time‐efficient and cost‐effective), which is likely to accelerate various graphene applications in industry.

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Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium

Cited by 837 publications

References 32 publications

Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene Layer on a Wide-Band Gap Semiconductor

Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene Layer on a Wide-Band Gap Semiconductor

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

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