Silicon Photonics XVII 2022
DOI: 10.1117/12.2606849
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Wafer scale fabrication of silicon nitride MEMS phase shifters with XeF2 dry vapor release etch process

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“…Next, 500 nm of a sacrificial layer of LPCVD amorphous silicon is deposited at 580 °C. Amorphous silicon can be removed with a vapor xenon difluoride etch without attacking the photonic or MEMS layers or exerting destructive capillary forces like a wet etchant [33,35]. The high selectivity also eliminates the need for a timed isotropic etch often used in single-layer MEMS photonic designs [24,36,37].…”
Section: Fabricationmentioning
confidence: 99%
“…Next, 500 nm of a sacrificial layer of LPCVD amorphous silicon is deposited at 580 °C. Amorphous silicon can be removed with a vapor xenon difluoride etch without attacking the photonic or MEMS layers or exerting destructive capillary forces like a wet etchant [33,35]. The high selectivity also eliminates the need for a timed isotropic etch often used in single-layer MEMS photonic designs [24,36,37].…”
Section: Fabricationmentioning
confidence: 99%