Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition

Jang, Yujin; Yeo, Seungmin; Lee, Han‐Bo‐Ram; Kim, Hyungjun; Kim, Soo Hyun

doi:10.1016/j.apsusc.2016.01.038

Cited by 121 publications

(90 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…While not as high as FETs with shorter channel length, this is an excellent demonstration of the new scales of electronics permitted by film growths. The growths mentioned thus far utilized inorganic precursors: MoCl 5 and H 2 S. Jang et al [60] used an organic Mo precursor, which enabled further lowering of the growth temperature to 200 • C. This growth rivaled MOCVD efforts, with a monolayer film 10 centimeters in diameter achieved on a sapphire substrate. The sequential depositing strategy of ALD helped avoid a major pitfall of MOCVD: Jang et al [60] observed little carbon contamination in their final sample.…”

Section: Atomic Layer Deposition (Ald)mentioning

confidence: 99%

“…The growths mentioned thus far utilized inorganic precursors: MoCl 5 and H 2 S. Jang et al [60] used an organic Mo precursor, which enabled further lowering of the growth temperature to 200 • C. This growth rivaled MOCVD efforts, with a monolayer film 10 centimeters in diameter achieved on a sapphire substrate. The sequential depositing strategy of ALD helped avoid a major pitfall of MOCVD: Jang et al [60] observed little carbon contamination in their final sample. While this low temperature growth lead to domains on the scale of nanometers, this may be an acceptable price to pay [60] Some applications may demand growing material directly on substrates that are either temperature sensitive themselves (such as flexible substrates) or on substrates with temperature sensitive components upon them (such as photoresists).…”

Section: Atomic Layer Deposition (Ald)mentioning

confidence: 99%

“…The sequential depositing strategy of ALD helped avoid a major pitfall of MOCVD: Jang et al [60] observed little carbon contamination in their final sample. While this low temperature growth lead to domains on the scale of nanometers, this may be an acceptable price to pay [60] Some applications may demand growing material directly on substrates that are either temperature sensitive themselves (such as flexible substrates) or on substrates with temperature sensitive components upon them (such as photoresists). Low temperature growths, while suffering in crystallinity, are essential for realizing these possibilities.…”

Section: Atomic Layer Deposition (Ald)mentioning

confidence: 99%

See 2 more Smart Citations

Large area few-layer TMD film growths and their applications

2020

View full text Add to dashboard Cite

Research on 2D materials is one of the core themes of modern condensed matter physics. Prompted by the experimental isolation of graphene, much attention has been given to the unique optical, electronic, and structural properties of these materials. In the past few years, semiconducting transition metal dichalcogenides (TMDs) have attracted increasing interest due to properties such as direct band gaps and intrinsically broken inversion symmetry. Practical utilization of these properties demands large-area synthesis. While films of graphene have been by now synthesized on the order of square meters, analogous achievements are difficult for TMDs given the complexity of their growth kinetics. This article provides an overview of methods used to synthesize films of mono-and few-layer TMDs, comparing spatial and time scales for the different growth strategies. A special emphasis is placed on the unique applications enabled by such large-scale realization, in fields such as electronics and optics.

show abstract

Section: Atomic Layer Deposition (Ald)mentioning

confidence: 99%

Section: Atomic Layer Deposition (Ald)mentioning

confidence: 99%

Section: Atomic Layer Deposition (Ald)mentioning

confidence: 99%

See 1 more Smart Citation

Large area few-layer TMD film growths and their applications

2020

View full text Add to dashboard Cite

show abstract

“…In the case of MoS 2 films, in vacuum and inert environments, the COF can reach values of 0.005 and 0.05, respectively [6,7], with wear values on the order of 10 -8 mm 3 N -1 m -1 for several counter-pairs [6]. On the other hand, WS 2 films exhibit great thermal stability, a working temperature higher than that exhibited by MoS 2 (approximately 100 °C) and COFs between 0.02 and 0.06 under controlled conditions [8,9].…”

Section: Introductionmentioning

confidence: 99%

Structure and Properties of Titanium Doped Tungsten Disulfide Thin Films Produced via the Magnetron Co-Sputtering DC Technique

Carmona

Sequeda

2016

Matéria (Rio J.)

View full text Add to dashboard Cite

In this work, titanium doped tungsten disulfide thin films (WS 2 -Ti) were deposited on AISI 304 stainlesssteel substrates using the magnetron co-sputtering DC technique. Films were produced with varying titaniumcathode power from 0 to 25 W. The titanium content of the WS 2 structure was determined using energy dispersive spectroscopy (EDS), thereby obtaining a maximum of 10% for the sample grown at 25 W. X-ray diffraction (XRD) results indicated, for the pure sample, the presence of a hexagonal phase of high intensity on the (103) plane. However, with the addition of titanium, the WS 2 crystallinity was reduced; nevertheless, when the titanium content was equal to 10%, nanocomposite formation was promoted. This effect was observed in TEM (transmission electron microscopy) images. Finally, the tribological behavior was determined using a ball on disk (BOD) test. With this method, friction coefficient curves were obtained with respect to the number of cycles, allowing the measurement of friction coefficient values of 0.1 for the pure sample and 0.15 for the sample grown at 5 W. Because of the low thickness of the samples, all of them failed during the first cycles.

show abstract

“…Chemisorption and self-limiting chemical reactions of ALD can provide MoS 2 film with strong interaction to the substrate and controllable number of layers (NL). [14][15][16][17][18][19][20] This strong interaction can bind MoS 2 film strongly to the substrate, which can ensure it does not fall off in the lubrication process. 21 ALD of MoS 2 contains four steps: pulse and purge molybdenum precursor, pulse and purge sulfur precursor, which mean the MoS 2 film with desired thickness can be got by repeating these steps.…”

mentioning

confidence: 99%

MoS2 solid-lubricating film fabricated by atomic layer deposition on Si substrate

Huang

Liu

et al. 2018

AIP Advances

View full text Add to dashboard Cite

How to reduce friction for improving efficiency in the usage of energy is a constant challenge. Layered material like MoS2 has long been recognized as an effective surface lubricant. Due to low interfacial shear strengths, MoS2 is endowed with nominal frictional coefficient. In this work, MoS2 solid-lubricating film was directly grown by atomic layer deposition (ALD) on Si substrate using MoCl5 and H2S. Various methods were used to observe the grown MoS2 film. Moreover, nanotribological properties of the film were observed by an atomic force microscope (AFM). Results show that MoS2 film can effectively reduce the friction force by about 30-45% under different loads, indicating the huge application value of the film as a solid lubricant. Besides the interlayer-interfaces-sliding, the smaller capillary is another reason why the grown MoS2 film has smaller friction force than that of Si.

show abstract

Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition

Cited by 121 publications

References 38 publications

Large area few-layer TMD film growths and their applications

Large area few-layer TMD film growths and their applications

Structure and Properties of Titanium Doped Tungsten Disulfide Thin Films Produced via the Magnetron Co-Sputtering DC Technique

MoS2 solid-lubricating film fabricated by atomic layer deposition on Si substrate

Contact Info

Product

Resources

About