2004 Proceedings. 54th Electronic Components and Technology Conference (IEEE Cat. No.04CH37546)
DOI: 10.1109/ectc.2004.1320315
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Wafer level interconnects for 3D packaging

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Cited by 2 publications
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“…Above 30 GHz, the insertion loss was predominated by the onset of a structural resonance. Banerjee and Drayton [21] designed and measured both monolithic (on the same substrate) and hybrid (on different substrates, similar to QP) packages built on high-resistivity silicon substrates (> 2000 Ω • cm) using double aluminum wirebonds. The insertion loss due to the wirebonds was 0.15 dB for the monolithic package at 50 GHz and 0.5 dB for the hybrid package at 40 GHz, respectively.…”
Section: Table I Dimensions Of the 100 µM Qp Interconnects (Unit: µM)mentioning
confidence: 99%
“…Above 30 GHz, the insertion loss was predominated by the onset of a structural resonance. Banerjee and Drayton [21] designed and measured both monolithic (on the same substrate) and hybrid (on different substrates, similar to QP) packages built on high-resistivity silicon substrates (> 2000 Ω • cm) using double aluminum wirebonds. The insertion loss due to the wirebonds was 0.15 dB for the monolithic package at 50 GHz and 0.5 dB for the hybrid package at 40 GHz, respectively.…”
Section: Table I Dimensions Of the 100 µM Qp Interconnects (Unit: µM)mentioning
confidence: 99%