Wafer design of widely tunable vertical-external-cavity surface-emitting laser with broadband gain spectrum

Zhang, Peng; Jiang, Maohua; Men, Yanbin; Zhu, Rihong; Zhang, Yu

doi:10.1007/s11082-014-9924-0

Opt Quant Electron

2014

DOI: 10.1007/s11082-014-9924-0

|View full text |Cite

Wafer design of widely tunable vertical-external-cavity surface-emitting laser with broadband gain spectrum

Peng Zhang

Maohua Jiang

Yanbin Men

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2020

2022

Publication Types

Select...

Article2

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

(1 citation statement)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although there are many reports of tuning QW VECSEL, the specific theoretical design and experiment reports of wide tuning and high power VECSEL are few. In the report [27], the Double-Band Mirror (DBM) is used to replace DBR to obtain a wider reflection bandwidth, and two InGaAs quantum wells with different Indium compositions to expand the material gain, but this is the theoretical calculation and the experimental results have not been obtained. In another report, the broadband performance VECSEL was obtained by using double well quantum wells and antiresonance structures, and finally, only 43nm and 2.6W output were obtained [25].…”

mentioning

confidence: 99%

Temperature-Stabilized and Widely Tunable Vertical External Cavity Surface-Emitting Laser With a Simple Line Cavity

Qiu

Wang

et al. 2022

IEEE Photonics J.

View full text Add to dashboard Cite

We designed and demonstrated a temperature-stable, wide-tuned, high-power Vertical External Cavity Surfaceemitting Laser (VECSEL) with a simple linear cavity. The quantum well is optimized by using the commercial PICS3D software to obtain wide gain and good thermal performance. The curve of BF has also been optimized, and a birefringent filter (BF) with a thickness of 1mm is selected as the tuning element. Then, we obtained a continuously adjustable range cover from 1044.5 nm to 1092.1 nm, 8 W of output power, and temperature-stable VECSEL, which verifies the feasibility of the design. Based on the experimental results, we concluded that the gain intensity corresponding to the tuning range should be at least greater than 163 e 26 /cm -3 s -1 eV -1 before the growth process ensures a wide tuning range. For the first time, to the best of our knowledge, we designed and obtained the tuning result of VECSEL in the linear cavity, and this is of great significance to the design of VECSEL with wide-tuning, high-power, and good temperature stability.

show abstract

mentioning

confidence: 99%

Temperature-Stabilized and Widely Tunable Vertical External Cavity Surface-Emitting Laser With a Simple Line Cavity

Qiu

Wang

et al. 2022

IEEE Photonics J.

View full text Add to dashboard Cite

show abstract

Design of gain region of high-power vertical external cavity surface emitting semiconductor laser and its fabrication

Zhang¹,

Zhang²,

Yugang³

et al. 2020

Acta Phys. Sin.

View full text Add to dashboard Cite

<sec> The vertical external cavity surface emitting laser (VECSEL) is one of the hottest research fields of semiconductor lasers, due to its high power and good beam quality. However, there are few reports about how to systematically design the active region of VECSEL. In this paper, the gain design of quantum wells, which are the most important region within the VECSEL, is carried out. </sec><sec> To achieve low power consumption under high temperature condition, epitaxial structure of the VECSEL is optimized by using the commercial software PICS3D. Firstly, the relationship between the structure of quantum well and the gain is simulated by the <i>k</i>·<i>p</i> method. Then, the gain spectra of quantum wells at different carrier densities and temperatures are compared with each other, and the optimal composition and thickness of quantum well are thus determined. The temperature drift coefficient is 0.36 nm/K, obtained by simulating the drift of the gain peak wavelength at the working temperature. Finally, the gain spectra of quantum wells with five different barriers are compared with each other. The slight blue shift of the gain peak in the quantum well with five different barriers accommodates the different emission thermal drifts of the quantum well at high temperature operation. With the GaAsP barriers on both sides of quantum well the gain characteristics of quantum wells can be improved efficiently. </sec><sec> The designed structure is deposited by the MOCVD system. According to the reflection spectrum of the gain chip, measured by ellipsometer, the stop-band over 100 nm is centered at the about 970 nm wavelength, confirming accurate growth of the VECSEL. The 808 nm pump laser is focused on the surface of VECSEL chip at an incident angle from 30° to 50°. The VECSEL light-light characteristics are tested under the output coupling mirror with different reflectivity. The output power of VECSEL with a 97.7% reflectance output coupling mirror reaches 9.82 W at the pumping power of 35 W, without saturating the power curve. By using the external mirrors with different reflectivity, there appears the wavelength shift with the pumping power changing from 0.216 nm/W to 0.16 nm/W. Thus, the internal heating effects are different for VECSEL with different mirrors. The divergence angles at two orthogonal directions are 9.2° and 9.0°, respectively. And the circle profile of optical field shows good symmetry. </sec>

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Wafer design of widely tunable vertical-external-cavity surface-emitting laser with broadband gain spectrum

Cited by 2 publications

References 22 publications

Temperature-Stabilized and Widely Tunable Vertical External Cavity Surface-Emitting Laser With a Simple Line Cavity

Temperature-Stabilized and Widely Tunable Vertical External Cavity Surface-Emitting Laser With a Simple Line Cavity

Design of gain region of high-power vertical external cavity surface emitting semiconductor laser and its fabrication

Contact Info

Product

Resources

About