Wafer bonding for silicon-on-insulator technologies

Recent progress in the synthesis and deterministic assembly of advanced classes of single crystalline inorganic semiconductor nanomaterial establishes a foundation for high-performance electronics on bendable, and even elastomeric, substrates. The results allow for classes of systems with capabilities that cannot be reproduced using conventional wafer-based technologies. Specifically, electronic devices that rely on the unusual shapes/forms/constructs of such semiconductors can offer mechanical properties, such as flexibility and stretchability, traditionally believed to be accessible only via comparatively low-performance organic materials, with superior operational features due to their excellent charge transport characteristics. Specifically, these approaches allow integration of high-performance electronic functionality onto various curvilinear shapes, with linear elastic mechanical responses to large strain deformations, of particular relevance in bio-integrated devices and bio-inspired designs. This review summarizes some recent progress in flexible electronics based on inorganic semiconductor nanomaterials, the key associated design strategies and examples of device components and modules with utility in biomedicine.

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“…The most common approach uses silicon on insulator wafers [58][59][60] (SOI), as illustrated in Fig. 2c (top).…”

Section: Bottom-up Approachesmentioning

confidence: 99%

Inorganic semiconducting materials for flexible and stretchable electronics

et al. 2017

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“…Tribological properties (friction, adhesion, and wear) of silica are of significant importance for a number of technological applications, including wafer bonding in nanoengineering of semiconductor devices [1,2] and wafer planarization for manufacturing of the microelectromechanical systems (MEMS) [3]. Friction and adhesion of silica are also of fundamental interest for geophysics and earthquake mechanics, since quartz is a common component of rocks and shallow tectonic earthquakes are known to result from frictional instabilities in crustal faults [4,5].…”

Section: Introductionmentioning

confidence: 99%

Effects of Interfacial Bonding on Friction and Wear at Silica/Silica Interfaces

Liu

Szlufarska

2014

Tribol Lett

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Static friction between amorphous silica surfaces with a varying number of interfacial siloxane (Si-O-Si) bridges was studied using molecular dynamic simulations. Static friction was found to increase linearly with the applied normal pressure, which can be explained in the framework of Prandlt-Tomlinson's model. Friction force was found to increase with concentration of siloxane bridges, but with a decreasing gradient, with the latter being due to interactions between neighboring siloxane bridges. In addition, we identified atomic-level wear mechanisms of silica. These mechanisms include both transfer of individual atoms accompanied by breaking interfacial siloxane bridges and transfer of atomic cluster initialized by rupturing of surface Si-O bonds. Our simulations showed that small clusters are continually formed and dissolved at the sliding interface, which plays an important role in wear at silica/silica interface.

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“…Wafer bonding allows heterogeneous integration of two materials that have similar or very different lattice parameters and thermal properties, via an intermediate bonding layer or direct bonding. One of the most prominent applications of wafer bonding is silicon-oninsulator (SOI), [1][2][3][4][5] and it can also be extended to germanium-oninsulator (GOI) 6,7 or other III-V groups integration. 8,9 First direct bonded SOI was reported by Lasky et al in 1986.…”

mentioning

confidence: 99%

AlN-AlN Layer Bonding and Its Thermal Characteristics

Bao

Lee

Chong

et al. 2015

ECS J. Solid State Sci. Technol.

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Homogeneous bonding was successfully demonstrated on 150 mm Si wafers by face-to-face direct dielectric bonding of clean and smooth aluminum nitride (AlN) layers. Characterization result from XPS confirms the layer composition and reveals that approximately 5 nm of the layer surface was partially oxidized during processing. After activation, substoichiometric nitrogen bound to aluminum, Al-O and Al-OH bonds were found at the thin film surface. The as-bonded wafer pairs are nearly void and particle free with a high bonding strength of 1527.8 ± 272.2 mJ/m 2 , enabling them to withstand the subsequent process steps. In addition, experimental results have indicated that the AlN-AlN bonded wafers can achieve a 23 and 16% improvement respectively in terms of heat dissipation compared with those using SiO 2 and Al 2 O 3 as the bonding layer. It is concluded that this AlN-AlN bonded wafer pairs can exhibit a better heat dissipation capability than other bonded counterparts. Wafer bonding allows heterogeneous integration of two materials that have similar or very different lattice parameters and thermal properties, via an intermediate bonding layer or direct bonding. One of the most prominent applications of wafer bonding is silicon-oninsulator (SOI), [1][2][3][4][5] and it can also be extended to germanium-oninsulator (GOI) 6,7 or other III-V groups integration. 8,9 First direct bonded SOI was reported by Lasky et al. in 1986. Since then, SOI fabricated from wafer bonding has been gaining ground from the conventional Si substrate in ultra-large scale integrations (ULSI) and micro-electro-mechanical systems (MEMS) 10 as the starting substrate, which benefits from its on-insulator structure. The "on-insulator" advantages make it possible to attain mechanical stability close to Si substrate and excellent electrostatic control, such as attenuated shortchannel effects, 11 reduced parasitic capacitance and absence of latchup. 12 As the most common buried insulator material, SiO 2 has already shown extensive popularity in a couple of optical devices. [13][14][15] However, the low thermal conductivity of SiO 2 (1.46 Wm −1 K −1 ) limits the heat dissipation efficiency and degrades the advantages of SOI. Also, the degraded heat dissipation path deteriorates its heat transfer efficiency to the underlying bulk Si layer, leading to severe self-heating effect. This effect is further magnified by device scaling for performance improvement, which constrains the applicability of SOI in electronics, especially in the cases where high temperature and power dissipation are expected. In order to address this problem, numerous efforts have been dedicated to exploring for novel buried insulator materials with high thermal conductivity such as diamond and silicon carbide. 16 Liang et al. had demonstrated the outstanding heat dissipation advantage of silicon-on-diamond (SOD) comparing to the conventional SOI substrate.17 Furthermore, high-k dielectric materials with high thermal conductivity have drawn great attention in SOI fabrication. For ...

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Wafer bonding for silicon-on-insulator technologies

Cited by 555 publications

References 5 publications

Inorganic semiconducting materials for flexible and stretchable electronics

Inorganic semiconducting materials for flexible and stretchable electronics

Effects of Interfacial Bonding on Friction and Wear at Silica/Silica Interfaces

AlN-AlN Layer Bonding and Its Thermal Characteristics

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