Wafer bonding for high-brightness light-emitting diodes via indium tin oxide intermediate layers

Liu, Po-Chun; Hou, Chin-Yuan; Wu, Yuan-Yu

doi:10.1016/j.tsf.2004.11.070

Cited by 16 publications

(13 citation statements)

References 10 publications

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“…Imprint mold and ␣-Si/SiO 2 /Si wafer were pressed in a differential thermal expansion coefficient apparatus made of stainless steel, molybdenum, and highly pure graphite. 8 To fabricate the IMPRINT poly-Si, the sample stack was first clamped at room temperature and a minimal compressive load was applied; it was then annealed at 550°C for 24 h. After the sample stack was separated, the IMPRINT poly-Si films were irradiated by a KrF excimer laser ͑Lambda Physik LPX-210i, Ϸ 248 nm͒ at room temperature with the N 2 flow rate of 50 sccm at a pressure of 800 mTorr to fabricate the IMPRINT-ELA poly-Si films. The laser beam spot size of 1.8 ϫ 23.1 mm was scanned with a 95% overlap from pulse to pulse and its repetition rate was maintained at 20 Hz.…”

Section: Device Fabricationmentioning

confidence: 99%

Comparison of TFTs Made by IMPRINT and IMPRINT-ELA Methods

Hou

2006

Electrochem. Solid-State Lett.

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Comparison of low-temperature polycrystalline silicon ͑poly-Si͒ thin-film transistors ͑TFTs͒ fabricated by both IMPRINT and IMPRINT-excimer loser annealing ͑ELA͒ methods was investigated. IMPRINT poly-Si was fabricated by pressing imprint mold ͑coated with Ni film͒ together with amorphous Si film and then annealing at 550°C. After the sample stack was separated, IMPRINT poly-Si film was irradiated by an excimer laser to form IMPRINT-ELA poly-Si. Upon increasing the laser energy to 345 mJ/cm 2 , the performance of IMPRINT-ELA-TFT was found to be far superior to that of IMPRINT-TFT due to larger grains and fewer intragrain defects of the IMPRINT-ELA poly-Si film than that of the IMPRINT poly-Si film. The mobility of the IMPRINT-ELA-TFT was 413 cm 2 /V s, which was 31.7 times higher than that of the IMPRINT-TFT. The on/off current ratio of the IMPRINT-ELA-TFT was 4.24 ϫ 10 6 , which was two orders magnitude higher than that of the IMPRINT-TFT.Low-temperature polycrystalline silicon ͑LTPS͒ thin-film transistors ͑TFTs͒ have attracted considerable interest due to their use in active matrix liquid crystal displays ͑AMLCDs͒ and active matrix organic light-emitting diodes ͑AMOLEDs͒ 1,2 because they exhibit superior performance compared to amorphous silicon ͑␣-Si͒ TFTs and can be used to integrate circuits on glass substrate. Polycrystalline silicon ͑poly-Si͒ films are usually formed by Ni-metal-induced lateral crystallization ͑NILC͒ 3 or excimer laser annealing ͑ELA͒. 4 The ELA technique appears to be highly promising because of its shorter processing time and low thermal budget. ELA poly-Si film exhibits good crystallinity and few intragrain defects. Although high-performance ELA TFTs with a mobility of over 300 cm 2 /V s have been fabricated, 5 their uniformity is inadequate and the surfaces of their poly-Si films are rough. In the NILC method, a thin Ni layer is selectively deposited on the top of an ␣-Si, which is then crystallized at a temperature lower than 600°C, subsequently forming nickel silicides. The crystallization of poly-Si is proceeded by the migration of nickel silicides through ␣-Si, forming needlelike Si grains. NILC TFTs are also appropriate for AMLCDs. 6 However, the NILC poly-Si film has intragrain defects with some uncrystallized regions between poly-Si grains. These defects degrade the transfer characteristics of TFT devices, including field effect mobility and leakage current. The imprint NILC method 7 has many better characteristics than the traditional NILC method, including fewer branch grains and a higher grain growth rate. However, some ␣-Si regions are present between needle grains. In this work, Ni-imprint Si grains are annealed using an excimer laser to improve the electrical characteristics of the poly-Si films. Device FabricationTwo types of poly-Si films were investigated in this study. Samples were designated as follows: ͑i͒ "IMPRINT" is a poly-Si film fabricated with the Ni-imprint method, while ͑ii͒ "IMPRINT-ELA" uses the same imprint method with an additional ELA process. The imprin...

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Section: Device Fabricationmentioning

confidence: 99%

Comparison of TFTs Made by IMPRINT and IMPRINT-ELA Methods

Hou

2006

Electrochem. Solid-State Lett.

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“…ITO coated glass refers to glass with has an ITO layer coated through physical vapor deposition in vacuum conditions and ITO coated glass maintains high conductivity and high transparency. ITO conductive glasses have been used successfully in light emitting devices [32,33], gas sensors [34,35], hetero-junction solar cells [36,37] and electrochemical degradation of nitric oxides [38][39][40]. However, ITO anodes have not been tested for electrochemical degradation of textile dyes and other common pollutants effectively.…”

Section: Introductionmentioning

confidence: 99%

Indium tin oxide coated conducting glass electrode for electrochemical destruction of textile colorants

Bandara¹,

Wansapura²,

Jayathilaka³

2007

Electrochimica Acta

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“…The molds were prepared by wet chemical etching using potassium hydroxide (45 wt %) solution at 70 C. 9) A 2-nm-thick Ni film was then deposited on the imprint mold. The imprint mold and -Si film were then pressed in a differential thermal expansion apparatus, 10) which was followed by annealing at 550 C for 24 h in argon ambient. An OM image of 112poly-Si is shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

Performances of Ni-Induced Lateral Crystallization Thin Film Transistors with <111 > and <112 > Needle Grains

Hou

2006

Jpn. J. Appl. Phys.

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Thin-film transistors (TFTs) fabricated using h111i and h112i needle grains have been investigated. They were fabricated by Ni-metal-induced lateral crystallization and Ni-metal imprint-induced crystallization method. It is found that the performance of 112-TFT was far superior to that of 111-TFT. The device transfer characteristics of 112-TFT include 2.6-fold-higher fieldeffect mobility ( FE ), 4-fold-higher on/off current ratio (I on =I off ), and 2.4-fold-lower leakage current (I off ) compared with those of the 111-TFT.

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Wafer bonding for high-brightness light-emitting diodes via indium tin oxide intermediate layers

Cited by 16 publications

References 10 publications

Comparison of TFTs Made by IMPRINT and IMPRINT-ELA Methods

Comparison of TFTs Made by IMPRINT and IMPRINT-ELA Methods

Indium tin oxide coated conducting glass electrode for electrochemical destruction of textile colorants

Performances of Ni-Induced Lateral Crystallization Thin Film Transistors with <111 > and <112 > Needle Grains

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