Wafer-bonded Ge:Ga blocked-impurity-band far-infrared detectors

Sawayama, Yoshihiro; Doi, Yasuo; Kurayama, Ryuji; Higurashi, Eiji; Patrashin, Mikhail; Hosako, Iwao

doi:10.1109/icimw.2010.5612767

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“…15) Recently, the SAB of Ge wafers has also been reported for infrared detectors. [16][17][18][19][20][21] However, little work has focused on the effects of the bonding conditions on the mechanical and electrical properties and microstructure of the Ge/Ge bonded interface.…”

Section: Introductionmentioning

confidence: 99%

Room-temperature direct bonding of germanium wafers by surface-activated bonding method

Higurashi

Sasaki

Kurayama

et al. 2015

Jpn. J. Appl. Phys.

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This paper reports the mechanical and electrical characteristics of Ge/Ge interfaces prepared by room-temperature surface-activated bonding (SAB). Bonded Ge/Ge wafer pairs with high bonding strength equivalent to that of the bulk material were achieved without any heat treatment. It was found that the bonding of Ge wafers was not sensitive to the background vacuum pressure in a wafer-bonding chamber compared with the bonding of Si wafers. The current-voltage characteristics and microstructures of bonded interfaces formed by SAB and low-temperature plasma activation bonding (PAB) were compared. It was demonstrated that junctions with very low resistivity can be obtained by SAB at room temperature.

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