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Terrier, C.; Chatelon, Jean-Pierre; Roger, J.A.; Berjoan, R.; Dubois, Christophe

doi:10.1023/a:1018388306674

Cited by 92 publications

(33 citation statements)

References 14 publications

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“…The lower oxidation state of the Sb on the surface is suggested by some authors, 31,32 who have observed as Sb 3d 3/2 peak shift by increasing the Sb doping concentration. According to this theory, Sb 5C in the bulk is dominant for …”

Section: Discussionmentioning

confidence: 69%

Surface‐related investigations to characterize different preparation techniques of Sb‐doped SnO₂ powders

Szczuko

Werner

Behr

et al. 2001

Surface & Interface Analysis

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Antimony-doped tin oxide powders were prepared using different routes and annealing conditions. The influence of preparation on the distribution of antimony in the powders was studied and correlated with the electrical properties of the powders. A model of doped SnO 2 powder that allows the bulk concentration of the doping element to be calculated from the XPS results is proposed. The doping after crystallization of SnO 2 leads to a very strong surface segregation that is proved by x-ray photoelectron spectroscopy. Antimony is incorporated at the largest concentration in the tin oxide lattice when it is added during the formation of stannic acid. The annealing temperature plays an important role in the antimony distribution. The lower the temperature, the smaller the crystallite size and the lower the incorporation of antimony in the lattice of SnO 2 . A strong correlation between bulk concentration and electrical and morphological properties was found.

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Section: Discussionmentioning

confidence: 69%

Surface‐related investigations to characterize different preparation techniques of Sb‐doped SnO₂ powders

Szczuko

Werner

Behr

et al. 2001

Surface & Interface Analysis

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“…We believed that it could be related to a possible agglomeration of crystallites in these films. Although, the formation of a nanometric grains is related to the Sb 5+ substitution on the SnO 2 :Sb thin films, several works reported that the dopant in SnO 2 should increase the stresses in this matrix and therefore reduce the grain growth [14,15]. Such behavior, in general, was associated to an enrichment of Sb on the surface of the grains, which could result in non-homogeneous solid solution of the SnO 2 :Sb samples [15].…”

Section: Resultsmentioning

confidence: 99%

Effect of Thickness on the Electrical and Optical Properties of Sb Doped SnO2 (ATO) Thin Films

et al. 2004

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Abstract. This work reports the preparation and characterization of (SnO 2 ) thin films doped with 7 mol% Sb 2 O 3 . The films were prepared by the polymeric precursor method, and deposited by spin-coating, all of them were deposited on amorphous silica substrate. Then, we have studied the thickness effect on the microstrutural, optical and electric properties of these samples. The microstructural characterization was carried out by X-ray diffraction (XRD) and scanning tunneling microscopy (STM). The electrical resistivity measurements were obtained by the van der Pauw four-probe method. UV-visible spectroscopy and ellipsometry were carried out for the optical characterization. The films present nanometric grains in the order of 13 nm, and low roughness. The electrical resistivity decreased with the increase of the film thickness and the smallest measured value was 6.5 × 10 −3 cm for the 988 nm thick film. The samples displayed a high transmittance value of 80% in the visible region. The obtained results show that the polymeric precursor method is effective for the TCOs manufacturing.

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“…When Sb was doped in SnO 2 films, Sb elements are substituted into the Sn 4+ site, and mixed charge valences, such as Sb 5+ and Sb 3+ , exist in SnO 2 films. When Sb 5+ is substituted into a Sn 4+ site, this acts as a donor, and creates excess charge carrier electrons [28]. Consequently, carrier concentration is increased, and resistivity is decreased, by the doping effect of Sb at a certain level of Sb-concentration, compared to those of undoped SnO 2 film.…”

Section: Resultsmentioning

confidence: 99%

Characterization of Sol-Gel Derived Antimony-doped Tin Oxide Thin Films for Transparent Conductive Oxide Application

Woo¹,

Koo²,

Chan³

et al. 2012

Transactions on Electrical and Electronic Materials

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Antimony doped tin oxide (ATO) thin films on glass substrate were prepared by the chemical solution deposition (CSD) method, using sol-gel solution synthesized by non-alkoxide precursors and the sol-gel route. The crystallinity and electrical properties of ATO thin films were investigated as a function of the annealing condition (both annealing environments and temperatures), and antimony (Sb) doping concentration. Electrical resistivity, carrier concentration, Hall mobility and optical transmittance of ATO thin films were improved by Sb doping up to 5~8 mol% and annealing in a low vacuum atmosphere, compared to the undoped tin oxide counterpart. 5 mol% Sb doped ATO film annealed at 550℃ in a low vacuum atmosphere showed the highest electrical properties, with electrical resistivity of about 8~10 × 10 -3 Ω·cm, and optical transmittance of ~85% in the visible range. Our research demonstrates the feasibility of low-cost solution-processed transparent conductive oxide thin films, by controlling the appropriate doping concentration and annealing conditions.

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Untitled

Cited by 92 publications

References 14 publications

Surface‐related investigations to characterize different preparation techniques of Sb‐doped SnO₂ powders

Surface‐related investigations to characterize different preparation techniques of Sb‐doped SnO₂ powders

Effect of Thickness on the Electrical and Optical Properties of Sb Doped SnO2 (ATO) Thin Films

Characterization of Sol-Gel Derived Antimony-doped Tin Oxide Thin Films for Transparent Conductive Oxide Application

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Untitled

Cited by 92 publications

References 14 publications

Surface‐related investigations to characterize different preparation techniques of Sb‐doped SnO2 powders

Surface‐related investigations to characterize different preparation techniques of Sb‐doped SnO2 powders

Effect of Thickness on the Electrical and Optical Properties of Sb Doped SnO2 (ATO) Thin Films

Characterization of Sol-Gel Derived Antimony-doped Tin Oxide Thin Films for Transparent Conductive Oxide Application

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Surface‐related investigations to characterize different preparation techniques of Sb‐doped SnO₂ powders

Surface‐related investigations to characterize different preparation techniques of Sb‐doped SnO₂ powders