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On the photoluminescence behavior of samarium-doped strontium titanate nanostructures under UV light. A structural and electronic understanding

“…Geometrical When the sample was heated at 750 1C a low intensity line at g = 1.9775 was observed. Hari et al 54 and Er et al 55 assigned the g = 1.974 signal to Ti 3+ and Ti 3+ -V O , respectively. However, Kolodiazhnyi and Petric 56 attributed this signal to the singly ionized barium vacancy in BaTiO 3 .…”

Characterization of manganese-doped BaTiO3–(Bi1∕2Na1∕2)TiO3 positive temperature coefficient of resistivity ceramics using impedance spectroscopy

“…Impedance spectroscopy has been used for probing the PTCR behavior in semiconducting BaTiO 3 ceramics because it is possible to separate the contribution of each electrical component in the polycrystalline PTCR ceramics. 11,12 BaTiO 3 -based ceramics typically consist of two electrical components: grain bulk and grain boundary regions. In some case, additional electrical responses occur due to the presence of inter-and/or intragranular surface layers 11,13,14 or non-Ohmic contacts between sample and electrode.…”

Influence of defect on the electrical and optical properties of A-site non-stoichiometry Ca0.67La0.22□0.11Ti(1−x)CrxO3−δ perovskite

“…The paramagnetic center at g ¼ 1.9761 is attributed to the presence of Ti 3+ related defect centers (Ti 3+ -V O ). 73 These defect centers are commonly observed in BaTiO 3 reducing conditions. 64 In contrary, Sun et al, however, assign the signal at g ¼ 1.976 to the presence of Ba (Asite) vacancies.…”

“…non-stoichiometric A-site). 72,73 Kutty et al 73 assumed that EPR signal at g ¼ 1.9971 is due to singly ionized A-site. The second strategy assumes that, when the ratio Ca Ti \1, excess Ti 4+…”