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Photoluminescence investigations of Eu3+ doped BaTiO3 nanopowders fabricated using heterometallic tetranuclear alkoxide complexes

“…The solvents were purified according to conventional techniques: n-PrOH by refluxing over Al(O n Pr) 3 and toluene-over LiAlH 4 with subsequent distillation. Barium metal, titanium n-propoxide, Ti(O n Pr) 4 , and 2,2,6,6-tetramethyl-heptanedione, Hthd, were purchased from Aldrich and used without further purification. IR spectra were recorded using Perkin-Elmer Spectrum 100 instrument for nujol mulls.…”

“…It has become clear at this moment that the control of stoichiometry, crystal structure and morphology for this particular phase represents a considerable challenge [3]. The further studies of the composition and structure of the applied sol-gel precursors revealed that solutions of homoleptic alkoxide complexes turned to contain precursors with compositions deviating from 1:1 (BaTi 4 (OR) 18 , Ba 2 Ti(OR) 8 (ROH) 4 , etc. [4]) or oxoalkoxide complexes demonstrating rather limited solution stability [5].…”

Influence of heat-treatment temperature on structural and electrical properties for BaSrTiO3 compounds

“…Perovskite materials can be prepared via a variety of methods, including mechanical methods (traditional mixed oxide processing) and chemical methods (flux growth of single crystals, chemical vapor deposition, co-precipitation, sol-gel). It can also be produced via the processing of metal alkoxides and the hydrothermal growth of fine powders [16][17] [18].…”

Acquiring MIS Structures Based on Bа_0.8Sr_0.2TiО₃Ferroelectric Films and their Properties

“…Unique physical properties of ferroelectric materials (high dielectric permittivity which changes in external electric field) allow us to create a novel class of layered metal-insulator-semiconductor (MIS) structures for electronic storage and computation devices in which ferroelectric thin film acts as the active element [1][2][3][4]. Ferroelectric thin film-based heterostructures are promising nanosystems for modern microelectronics in terms of non-volatile memory [5][6][7].…”

“…As for the limiting factor of their exploitation, currently technologies do not provide a controllable and reproducible film growth within the nanoscale range. There is a technology to deposit ferroelectric films by the sol-gel method onto a silicon wafer, where a sequence of intermediate metal layers on its surface is used [2,5,6]. During vacuum deposition of insulator thin films, the most effective method of deposition is the technique of sputtering the given insulator in the argon operation medium in the HF discharge [7][8][9].…”