W-band GaN power amplifier MMICs

Brown, Andrew S.; Brown, Ken; Chen, James; Hwang, K. C.; Kolias, N.J.; Scott, Rick

doi:10.1109/mwsym.2011.5972571

Cited by 46 publications

(13 citation statements)

References 1 publication

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“…State of the art high power solid-state MMIC processes could provide power amplifiers with saturated power in the range of 30dBm [5] [6]. On the contrary, no amplifier with a saturated power level in the range of 40W and sufficient bandwidth is available today for wireless communication systems at millimeter waves.…”

Section: B Capacity and Coverage Scenario At W-bandmentioning

confidence: 99%

Millimeter wave wireless system based on point to multipoint transmissions

Paoloni

Magne²,

André

et al. 2016

2016 European Conference on Networks and Communications (EuCNC)

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Section: B Capacity and Coverage Scenario At W-bandmentioning

confidence: 99%

Millimeter wave wireless system based on point to multipoint transmissions

Paoloni

Magne²,

André

et al. 2016

2016 European Conference on Networks and Communications (EuCNC)

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“…The availability of electronic devices at W-band (92 -95 GHz) is still limited. GaN SSPAs are recently presented with output power in the range of 1 W [8,9]. This power level is not sufficient for enabling the coverage of wide area corresponding to a sector with a wide angle, as required in the three tiers architecture (Fig.…”

Section: Millimeter Wave Front Endmentioning

confidence: 99%

TWEETHER project for W-band wireless networks

Paoloni

Magne²,

André

et al. 2016

2016 IEEE 9th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT)

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Abstract-The European Horizon 2020 project TWEETHER aims to make a breakthrough in wireless networks to overcome the congestion of the actual mobile networks and foster the new 5G networks. A European Consortium including four universities and five companies from four European countries is devoting a relevant effort to realize novel terminals and transmission hubs to operate in the W-band (93 -95 GHz). This paper will describe the advancement of the project.

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“…For these applications, Terahertz Monolithic Integrated IC (TMIC) is emerging as a new technology due to advancement in high-speed semiconductor devices and nanotechnology [4]. III-Nitride based materials such as GaN are more suitable for TMIC technology over materials for instance, GaAs or InP due to higher power density and power efficiency [5]. Unwanted mode effects and reduced signal loss which occurs in the substrate itself while operating at these frequencies can be suppressed by adopting TMIC technology.…”

Section: Introductionmentioning

confidence: 99%

Design and performance comparison of various terahertz microstrip antennas on GaN-on-low resistivity silicon substrates for TMIC

Benakaprasad

Eblabla

et al. 2016

2016 Asia-Pacific Microwave Conference (APMC)

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Abstract-In this paper we demonstrate various configurations of THz microstrip antenna on GaN-on low resistivity silicon substrates (p < 40 O.cm). To reduce the losses caused by the substrate and to enhance the antenna performance, the driven patch is shielded by a ground plane and silicon nitride, with BeB as the inset layer between them. Second patch (elevated patch) is suspended in air using gold posts, which makes the design stack configuration. Here, study of various design performances has been represented by changing the shape of the antenna between rectangular and circular, optimising the BeB and stack height and evaluating performance of stack using air and BeB as dielectric. Better fabricated performance was obtained when the patch was elevated in air and by using rectangular-circular stack configuration with BeB and elevation height of 5 !-lm. 3D EM model showed directivity, gain, and radiation efficiency as high as 8.3 dB, 3.4 dB, and 32 % respectively, a significant improvement over single or stack configuration antenna. Better simulated gain (6.7 dB) was obtained with the BeB height of 30 !-lm using a single antenna and highest gain and directivity (7.5 dB and 8.8 dB respectively) for stack antenna of height 15!-lm .To the authors' knowledge this is the first time such a study has been carried out at Terahertz frequency and this developed technology is suitable for high performance III-V material on low resistivity/ high dielectric substrates.

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W-band GaN power amplifier MMICs

Cited by 46 publications

References 1 publication

Millimeter wave wireless system based on point to multipoint transmissions

Millimeter wave wireless system based on point to multipoint transmissions

TWEETHER project for W-band wireless networks

Design and performance comparison of various terahertz microstrip antennas on GaN-on-low resistivity silicon substrates for TMIC

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