W-band GaN power amplifier MMICs

Brown, Andrew S.; Brown, Kenneth D.; Chen, J.; Hwang, K. C.; Kolias, N.J.; Scott, R.

doi:10.1109/mwsym.2011.5973491

Cited by 67 publications

(19 citation statements)

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“…Consequently, GaN device is seldom investigated for applications in 60 GHz PA. However, the Psat of GaN PA can still keep an extraordinary high level of 31 dBm with 20% PAE even at 91 GHz [50].…”

Section: Motivationmentioning

confidence: 99%

Compact transformer based power combination techniques for millimeter-wave CMOS power amplifiers

Han¹

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The strong demand on miniaturization of wireless communication systems has propelled the development of radio-frequency (RF) component integration in semiconductors. In the realm of millimeter-wave (mm-wave), the V-band centred at 60 GHz has been demonstrated to be the most promising frequency range for short range communication applications such as high data rate transfer systems. In fact, silicon-based 60 GHz chipsets with integrated poweramplifiers (PA) have become an economical choice for high density integration.

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Section: Motivationmentioning

confidence: 99%

Compact transformer based power combination techniques for millimeter-wave CMOS power amplifiers

Han¹

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“…Maturity in the processing and fabrication techniques over the years has greatly exploited the potential of the GaN technology. MMICs designed and fabricated with AlGaN/GaN HEMTs such as the high efficiency power amplifier has displayed a power added efficiency of greater than 60% [15], [16] and amplifiers having a gain greater than 15 dB operating in W-band frequency spectrum optimized at 95 GHz [17] was also designed and fabricated.…”

Section: Chapter 2 Semiconductor Devicesmentioning

confidence: 99%

“…17 Frequency response comparisons between the measured (blue trace) and simulated (red trace) insertion loss Singapore Copyright Act applies to the use of this document. Nanyang Technological University Library ATTENTION: The Singapore Copyright Act applies to the use of this document.…”

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confidence: 99%

Modeling in microelectronics at microwave/millimeter-wave frequencies and innovative circuit design

Lim¹

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Monolithic microwave integrated circuits (MMICs) have become an important and integral part of our lives today. Modern day MMICs can be found in a wide range of applications ranging from commercial products such as the cellular communication systems to complex satellite systems and radar systems used in the defence industries. The advancement in the field of MMICs in terms of its performance and compactness in size is the result of the union between the understanding in microwave/millimeter-wave frequencies theories and microelectronics fabrication competencies. The active device which is the key component for MMICs has seen tremendous progress over the past fifty years not solely in terms of the frequency of operation but also the achievable output power density [1]. For example, indium phosphide (InP) based double heterojunction bipolar transistors had demonstrated a f max of greater than 800 GHz [2], silicon germanium (SiGe) and CMOS based RFICs working above 100 GHz [3], and AlGaN/GaN based power amplifiers operating in the W-band frequency spectrum [4],[5]. A GaN power amplifier design capable of achieving pulsed output power of greater than 400W with PAE greater than 40% across the frequency range from 2.9 GHz to 3.5 GHz was demonstrated [6]. GaN power amplifier capable of achieving pulse output power of 750W was also demonstrated but has a narrow bandwidth performance at 2.14GHz [7].As listed above, each material will have traits superior to others and selecting the appropriate material system to be used in circuit design will depend on the intended application. Certain materials such as InP and GaAs are more proficient in high frequency operation (beyond w-band operation) while material such as GaN display superiority when used in high power applications.

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“…It is necessary to model the Q(λ 2 ) and U (λ 2 ) spectra to determine the nature of a multi-peaked F (φ). The outputs of RM Synthesis and rmclean, however, are useful in identifying Faraday complex spectra (Brown, 2011;Law et al, 2011;Anderson et al, 2015) and as inputs to the QU analysis.…”

Section: Introductionmentioning

confidence: 99%

A study of magnetic fields in HII regions using Faraday rotation

Costa¹

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W-band GaN power amplifier MMICs

Cited by 67 publications

References 0 publications

Compact transformer based power combination techniques for millimeter-wave CMOS power amplifiers

Compact transformer based power combination techniques for millimeter-wave CMOS power amplifiers

Modeling in microelectronics at microwave/millimeter-wave frequencies and innovative circuit design

A study of magnetic fields in HII regions using Faraday rotation

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