VUV/Vis Photoluminescence, Site Occupancy, and Thermal‐Resistance Properties of K₄SrSi₃O₉:Ce³⁺

Abstract

A series of Ce -activated K SrSi O materials emitting bright blue light under near-UV excitation was obtained by a facile solid-state reaction. The luminescence of Ce -doped K SrSi O shows excellent thermal stability in a large temperature range. The detailed temperature/concentration-dependent luminescent properties of Ce confirm that there are two different Ce sites in K SrSi O :Ce , and energy transfer from the high-energy Ce(1) sites to the low-energy Ce(2) sites was demonstrated to occur by electric dipole-dipole interaction. The maximum photoluminescence quantum yield of Ce -doped K SrSi O can reach 56 %, and a UV-excited white LED device with low correlated color temperature (CCT=4617 K) and high color-rendering index (R =80) was fabricated with K SrSi O :Ce .

Bright Photoluminescence of [{(Cp)2Ce(μ‐Cl)}2]: A Valuable Technique for the Determination of the Oxidation State of Cerium

“…The solid compound exhibits a quantum yield of Φ =61(±2)% at room temperature, which is very high for a purely Ce‐based compound. This quantum yield is also competitive with previously published values for Ce 3+ ‐doped inorganic LED phosphors, such as Y 3 Al 5 O 12 (YAG):Ce 3+ ( Φ =70 %) and K 4 SrSi 3 O 9 :Ce 3+ ( Φ =56 %) at room temperature. This result suggests the potential capability of this complex as an efficient phosphor in terms of emission energy and quantum yield.…”

Dual-Mode Optical Thermometry Design in Lu3Al5O12:Ce3+/Mn4+ Phosphor

“…For the Ce 3+ single-doped sample, there are two distinct excitation peaks around 348 and 450 nm when monitored at 511 nm, which are the transition from the 4f ground state to the 5d excited-state levels ( 2 D 5/2 , 2 D 3/2 ) of Ce 3+ . Upon excitation at 348 nm, the emission band centered at 511 nm is attributed to the 5d → 4f characteristic transition of Ce 3+ (Figure a). − For the Mn 4+ single-doped sample, a broad excitation peak is observed between 300–400 nm and 470–530 nm when monitored at 670 nm, and a characteristic 2 E g → 4 A 2g transition of Mn 4+ peaking at 670 nm appears under excitation at 323 nm (Figure b). , Due to the large overlap around 348 nm in the excitation spectra of the two single-doped samples, we can naturally infer that if the co-doped material is excited by 348 nm light, the dual-emitting Ce 3+ and Mn 4+ luminescence can be generated. As expected, the co-doped LuAG:Ce 3+ /Mn 4+ emits a dual-emission band peaking at 511 and 670 nm when excited by ultraviolet light of 348 nm, exactly matching the characteristic emission of Ce 3+ and Mn 4+ , which further verifies the formation of Ce 3+ and Mn 4+ (Figure c).…”

Synthesis and photoluminescence properties of novel far-red-emitting BaLaMgNbO6:Mn4+ phosphors for plant growth LEDs

“…Furthermore, the detailed concentration quenching mechanism can be analyzed by the following equation: 55 log( I / x ) = A − ( θ /3)log x where I is the emission intensity, x is the activator ion concentration, A is concentration and the values of θ = 6, 8 and 10 correspond to electric dipole–dipole, dipole–quadrupole and quadrupole–quadrupole interaction, respectively. 56 Fig. 5(d) shows the dependence of log( I / x ) on log( x ) of the BLMN: x Mn 4+ phosphors.…”