Volumetric Optical Recording Using a 400 nm All-Semiconductor Picosecond Laser

Tashiro, Shiori; Takemoto, Y.; Yamatsu, Hisayuki; Miura, Takahiro; Fujita, Goro; Iwamura, Takashi; Ueda, Daisuke; Uchiyama, Hiroshi; Yun, Kyung Sung; Kuramoto, Masaru; Miyajima, Takao; Ikeda, Masao; Yokoyama, Hiroyuki

doi:10.1143/apex.3.102501

Cited by 19 publications

(13 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To store data three dimensionally, multiphoton processes, such as two photon absorption, must be induced using high peak power optical pulses. A GaN-based SOA incorporating MLLD would be highly suitable as a practical pulse source, and in fact, such applications have already been demonstrated [45,46].…”

Section: Optical Storagementioning

confidence: 99%

Gallium Nitride-based Semiconductor Optical Amplifiers

Koda¹,

Watanabe²,

Kono³

2015

Some Advanced Functionalities of Optical Amplifiers

View full text Add to dashboard Cite

GaN-based material can potentially cover a wide spectral emission ranμe, and laser diodes emittinμ in the UV, violet, blue, μreen, and red wavelenμths have already been demonstrated and/or commercialized. GaN-based semiconductor optical ampliλiers SOAs have the ability to boost the output power oλ laser diodes and thus are candidates λor a broad variety oλ potential uses. Applications that utilize short wavelenμth, ultraλast pulses, includinμ microprocessinμ, orthoptics, and next-μeneration optical storaμe can most beneλit λrom GaN-based SOAs since current ultraλast pulse sources rely on larμe, expensive solid-state lasers. GaN-based SOAs can μenerate hiμh-enerμy, hiμh peak power optical pulses when used in conjunction with mode-locked laser diodes. In this chapter, the basic characteristics oλ these devices are discussed, concentratinμ on pulse ampliλication. Early experimental work, as well as the latest results, is presented, and improvements in the SOA desiμn allowinμ the μeneration oλ hiμher optical pulse enerμy are discussed.

show abstract

Section: Optical Storagementioning

confidence: 99%

Gallium Nitride-based Semiconductor Optical Amplifiers

Koda¹,

Watanabe²,

Kono³

2015

Some Advanced Functionalities of Optical Amplifiers

View full text Add to dashboard Cite

show abstract

“…[1][2][3][4][5] One of the most attracting application of such system in the violet-blue spectral range is the new generation of high-density optical storage system, based on the two-photon absorption. [6][7][8] Here, the compactness and price/lifetime ratio of nitride-based devices are their greatest asset. Material properties, in particular the low lateral conductivity of the p-type GaN top contact layer, makes the processing of electrically isolated laser sections relatively uncomplicated.…”

Section: Introductionmentioning

confidence: 99%

Picosecond pulse generation in monolithic GaN-based multi-section laser diodes

et al. 2013

View full text Add to dashboard Cite

We develop a monolithic picosecond laser pulse generator, based on the classical design of a group-III-nitride Fabry-Pérot laser diode with electrically separated ridge sections. We use two different multi-section design variants, with the absorber section placed either in the center or at the end of the ridge. Profiting from the very low lateral conductivity in the p-type GaN top contact layer, we implement the multi-section concept just by etching off small sections of the top metalization on the ridge. The physical mechanism underlying short pulse generation within such system, operating in the 400 - 435nm wavelength range, strongly depends both on the reverse bias applied to the absorber and the forward current in the gain section. Varying the applied reverse bias affects both the absorption and the carrier lifetime in the absorber section through changes in the QW internal field. In consequence we can distinguish between different modes of operation. For moderately long carrier lifetimes the absorber stabilizes relaxation oscillations in the GHz frequency range and self-pulsation occurs, of relatively long duration. With increasing reverse bias, and thus decreasing carrier lifetime, we observe a transition to self-Q-switching. Finally, at large enough negative bias, the carrier life time in the absorber is so short that the laser diode operates in a passive self-mode-locking regime with a repetition rate of 87 GHz and pulse duration of 2 ps for a cavity length of 540 µm

show abstract

“…This is the highest peak power ever obtained for a GaInN MOPA system. This system was used to engrave voids into a disk medium in order to demonstrate the feasibility of volumetric optical recording using semiconductor based ultrashort pulse sources [7].…”

Section: Introductionmentioning

confidence: 99%