Volume Manufacturable High speed 850nm VCSEL for 100G Ethernet and Beyond

Giovane, Laura M.; Wang, Jingyi; Murty, M. V. R. K.; Harren, Ann Lehman; Chang, Hsu-Hao; Wang, Charlie C. L.; Hui, David; Feng, Zheng-Wen; Fanning, Thomas; Sridhara, Aaditya; Taslim, Sumtro-Joyo; Chu, Jason

doi:10.1364/ofc.2016.tu3d.5

Cited by 9 publications

(3 citation statements)

References 2 publications

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“…And at the end of the day, the efficiency of any transmission link is based on how easy it is to accurately detect the transmitted information by the receiver. Similar results were reported in [9] and [10].…”

Section: Vcsel Modulation Optimizationsupporting

confidence: 91%

10Gbps Vertical Cavity Surface Emitting Lasers Data Transmission

Ireeta¹,

Isoe²,

Nabadda³

2022

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The overwhelming increase in bandwidth demand as the number of people with smart phones and other internet-using gadgets shoots up, with emerging numerous apps (some with an aspect of live streaming), social media platforms, the increase in number of broadcasting networks both Radio and television stations, plus almost every household having a TV set and Radio, with a current advancement of access on mobile phones has created a bottle-neck in telecommunication transmissions. The blocking/denying internet access for specific apps has become the desperate measure users have resorted to, for example 'setting up a firewall for smart phones' to maintain fast internet, which is inconveniencing and user unsatisfying. Other measures in place include recent digital migration, which arose out of the Regional Radio communication Conference of 2006 (RRC06) and the subsequent Geneva 2006 Agreement (GE06) of the International Telecommunication Union (ITU) 'Recommendations' which resolved that all countries signatory to the agreement must migrate from analogue to digital broadcasting services by 2015 (Uganda was part). This is a smart move, but it doesn't solve the problem of increased required capacity. In this study, we experimentally demonstrate 10Gbps data transmissions using a direct data modulator that is, a 1300 nm Vertical Cavity Surface Emitting Laser (VCSEL). We characterized the modulator to attain effective performance thus obtaining the appropriate current value (5.5mA) at which we incurred minimum penalties and corresponding Bit Error Rates (BERs) favourable for high-speed modulation, i.e., a sensitivity of -16.8745 dBm power penalty was obtained on a 17km length ITU-T G.652 Non-Dispersion Shifted Single mode fiber.

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Section: Vcsel Modulation Optimizationsupporting

confidence: 91%

10Gbps Vertical Cavity Surface Emitting Lasers Data Transmission

Ireeta¹,

Isoe²,

Nabadda³

2022

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“…Vertical-cavity surface-emitting lasers (VCSEL) have become the preferred light sources in many photonic systems, enabling short-link interconnections [1] but also in other emerging mass-market applications like sensing and detection [2]. The large production volume of VCSELs would benefit from a simplification of the manufacturing process flow that may largely increase the cost-effectiveness.…”

Section: Introductionmentioning

confidence: 99%

Oxide-confined VCSELs fabricated with a simple self-aligned process flow

Marigo-Lombart¹,

Calvez²,

Arnoult³

et al. 2017

Semicond. Sci. Technol.

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To cite this version:Ludovic Marigo-Lombart, Stéphane Calvez, Alexandre Arnoult, Hugo Thienpont, Krassimir Panajotov, et al.. Oxide-confined VCSELs fabricated with a simple self-aligned process flow. Semiconductor Science and Technology, IOP Publishing, 2017, 32 (12) Abstract :. We propose a simplified and easier fabrication process flow for the manufacturing of AlOx-confined VCSELs based on combining the oxidation step with a self-aligned process, allowing the mesa etching and two successive lift-off steps based on a single lithography step. The electro-optical confinement achieved by standard lateral oxidation enables a low threshold and a single mode behaviour for the VCSEL. This simplified process can largely improve VCSEL manufacturing by reducing the processing time and costs compared to the standard VCSEL process.Keywords : VCSEL, Self-aligned, oxidation Introduction:Vertical-cavity surface-emitting lasers (VCSEL) have become the preferred light sources in many photonic systems, enabling short-link interconnections [1] but also in other emerging mass-market applications like sensing and detection [2]. The large production volume of VCSELs would benefit from a simplification of the manufacturing process flow that may largely increase the cost-effectiveness. Indeed, compared to the LED and LDs, the VCSEL fabrication process flow requires a large number of elementary steps defined by successive inter-aligned photolithography levels. A precision in the micron range is required to ensure the lateral alignment between the optical waveguide and the electrical injection. For these reasons, one of the most important concerns for the VCSEL manufacturers is to improve the production throughput by lowering the fabrication time and cost per wafer. The development of a self-aligned process is of great interest as already demonstrated for the fabrication of high performance HBT transistors or ridge lasers [3,4]. To that extent, Al-Omari [5] used a top metallic contact deposited over a photoresist layer as a hard mask to dry-etch the VCSEL mesa. Chua [6] developed a pseudo-planar approach by opening via holes down to the AlAs layer to carry out the lateral oxidation. This process has subsequently been improved by Strzelecka [7] to increase the device density. Recently, we have shown that air-post VCSELs could be created using an innovative selfaligned process, which combined several masking and lift-off steps defined by a single lithographic step [8].In this paper, we extend this work and propose a new process flow to fabricate, in a very simple and straightforward way, the widely-used oxide-confined VCSELs. The demonstrated process drastically simplifies the oxide-confined VCSEL fabrication by reducing the total number of lithographic alignment steps from four or more to only one alignment, with the additional advantage of relieving the required tolerances. This process flow, most suitable for 3D imaging and sensing applications, can also be easily implemented for the fabrication of other optoelectronic devices such as...

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“…Figure16. Selected results for 3 dB bandwidths of nm VCSELs at RT (unless stated otherwise)[22,57,59,[61][62][63]65,81,83,[116][117][118][119][120][121][122][123][124][125][126][127][128][129][130][131][132][133].…”

mentioning

confidence: 99%

Recent Advances in 850 nm VCSELs for High-Speed Interconnects

et al. 2022

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Vertical-cavity surface-emitting lasers (VCSELs) have made remarkable progress, are being used across a wide range of consumer electronic applications, and have particularly received much attention from the telecom and datacom industries. However, several constraints are thus currently being tackled to improve the device characteristics and modulation formats to meet the various demanding requirements of the future 800 GbE and 1.6 TbE Ethernet standards. This manuscript discusses the device characteristics and the key considerations in the device designs and optimizations. Finally, we elucidate the latest developments and vital features of modern 850 nm VCSELs for high-speed interconnects.

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Volume Manufacturable High speed 850nm VCSEL for 100G Ethernet and Beyond

Cited by 9 publications

References 2 publications

10Gbps Vertical Cavity Surface Emitting Lasers Data Transmission

10Gbps Vertical Cavity Surface Emitting Lasers Data Transmission

Oxide-confined VCSELs fabricated with a simple self-aligned process flow

Recent Advances in 850 nm VCSELs for High-Speed Interconnects

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