Voltage tuneable terahertz emission from a ballistic nanometer InGaAs∕InAlAs transistor

Łusakowski, J.; Knap, W.; Dyakonova, N.; Varani, L.; Matéos, J.; González, T.; Roelens, Y.; Bollaert, S.; Cappy, A.; Karpierz, K.

doi:10.1063/1.1861140

Cited by 143 publications

(115 citation statements)

References 34 publications

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“…The quality factor experimentally obtained from the linewidth [full width at half maximum (FWHM)] of the resonance for V 0 = 65 mV is Q = ω 0 τ eff ≈ 1.2. This value is in good agreement with the calculated values of ω 0 τ eff ≈ 1 obtained taking into account the electron drift velocity v 0 ≈ 8 10 5 m.s −1 according to Monte Carlo simulation [11]. In order to determine the theoretical spectral response of plasma waves resonances, the experimental data are compared to the model developed by V. Ryzhii et al [12] on the plasma mechanism of terahertz photomixing in HEMTs (solid lines in Fig.…”

supporting

confidence: 67%

Tunable plasma wave resonant detection of optical beating in high electron mobility transistor

Torres

Nouvel

Chusseau

et al. 2007

2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference

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We report on tunable terahertz resonant detection of two 1.55 µm cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor. We show that the fundamental plasma resonant frequency and its odd harmonics can be tuned with the applied gate-voltage in the range 75-490 GHz. The observed frequency dependence on gate-bias is found to be in good agreement with the theoretical plasma waves dispersion law.PACS numbers: 85.30. Tv, 52.35.-g, 61.80.Ba, 2006 Operating optic-to-electronic data conversion at the terahertz (THz) frequency range is one of the most promising issue of optoelectronic devices. Recently, experimental studies on the plasma resonant detection in high electron mobility transistors (HEMTs) and in a single and a double quantum well field effect transistors (FETs) have been published [1,2,3,4,5,6]. For submicron gate-lengths, fundamental plasma frequencies reach the THz range [7]. THz detection by plasma waves is easily tunable by changing the gate-voltage. Spectral profiles of THz plasma waves resonances were first reported by T. Otsuji et al., the HEMT being excited by means of interband photoexcitation using the differencefrequency component of a photomixed laser beam [8].With a similar experiment, we investigate in this letter the plasma waves resonances excited in the channel of HEMTs by the beating of two cw-lasers. We show that the plasma resonant frequencies follow the square-root dependence versus applied gate-voltage as initiallypredicted by Dyakonov-Shur theory [7].Experiments were performed using an AlGaAs/InGaAs/InP HEMT with gate-length L g = 800 nm and a threshold voltage of V th = -150 mV extracted from the transfer characteristics (inset (a) of The whole HEMT structure is transparent to the incident radiation excepted the InGaAs-channel where the interband photoexcitation occurs. By using a tunable optical beating this photoexcitation is modulated over a large frequency range. Two commercially-available cw-lasers sources centered at λ 1 = 1543 nm and λ 2 = 1545 nm are used. Each powerful laser (≈ 20 mW) can be tuned over a range of ≈ ± 1 nm by varying the temperature. Their mixing produces a tunable optical beating from 0 to 600 GHz. The collimated beams are mechanically chopped at 120 Hz and focused onto the

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supporting

confidence: 67%

Tunable plasma wave resonant detection of optical beating in high electron mobility transistor

Torres

Nouvel

Chusseau

et al. 2007

2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference

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“…The beauty of that proposal was that the radiation was predicted to be gate- * corresponding author; e-mail: Jerzy.Lusakowski@fuw.edu.pl voltage-tunable and spectrally narrow. In fact, following this idea, an emission from nm field-effect transistors was experimentally observed and characterized [5][6][7][8]. Surprisingly, this observation did not lead, however, to construction of a FET-based THz sources, quite opposite to FET-based THz detectors [9].…”

Section: Introductionmentioning

confidence: 92%

Sub-Terahertz Emission from Field-Effect Transistors

et al. 2017

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Several commercially available field-effect GaInAs-based transistors were studied as emitters of electromagnetic radiation. The emitters were tested either at room or at liquid helium temperature. To spectrally analyse emitted radiation, we applied three different experimental techniques: a spectrum analyser with antennas and mixers, a Michelson interferometer and a magnetic-field-tunable InSb detector. We show that the emission consists of a fundamental frequency of 11.5 GHz and its multiple harmonics spanning the emission band up to about 400 GHz. Analysis of the results allows us to suggest that the emission is caused by a Gunn effect and a high harmonics content is related to a pulse-like time dependence of the current.

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“…The necessary condition for such an instability development is a rather high mobility of carriers in the channel which can usually be achieved by decreasing the lattice temperature. To fulfil this condition we took the case corresponding to the electron mobility µ > 10000 cm 2 behaviour of the EOS-signal unambiguously evidences that the system approaches the threshold of self-oscillations originated from the development of instability. Beyond the instability threshold, the standard version of the EOS technique becomes invalid since the system under test cannot be in a static state without external action.…”

Section: Simulationmentioning

confidence: 99%

“…Up to now, investigations of eigen 2D plasma waves were carried out mainly in the following directions: (i) experimental investigation of the voltage-tunable spectral behaviour of THz radiation emission from FETs/HEMTs (see, e. g. [2,3] and references therein); (ii) theoretical investigation of spectral behaviour of electronic noise in FET/ HEMT channels [2,4,5]; and (iii) experimental and theoretical investigation of both THz radiation resonant detection and THz re-emission at the beating frequency of two-laser excitation (see, e. g. [6] and references therein).…”

Section: Introductionmentioning

confidence: 99%

Investigation of 2D plasma resonances in HEMTs by using electro-optical sampling technique

Torres¹,

Varani²,

Теппе³

et al. 2011

Lith. J. Phys.

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Possibilities and advantages of the electro-optical sampling (EOS) technique for the investigation of excitation of THz-range 2D plasma waves in FET/HEMT channels are considered both experimentally and theoretically. It is experimentally demonstrated that the EOS technique allows one to identify an excitation of 2D plasma waves in the HEMT channel under a given working point determined by external embedding circuits. Theoretical simulations show that the development of the instability of 2D plasma waves can be easily identified in the framework of the EOS technique.

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Voltage tuneable terahertz emission from a ballistic nanometer InGaAs∕InAlAs transistor

Cited by 143 publications

References 34 publications

Tunable plasma wave resonant detection of optical beating in high electron mobility transistor

Tunable plasma wave resonant detection of optical beating in high electron mobility transistor

Sub-Terahertz Emission from Field-Effect Transistors

Investigation of 2D plasma resonances in HEMTs by using electro-optical sampling technique

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