Voltage-tunable dual-band quantum dot infrared photodetectors for temperature sensing

Abstract

We report voltage-tunable 3-5 μm & 8-12 μm dual-band detection in the InAs/Al0.3Ga0.7As/In0.15Ga0.85As confinement-enhanced dots-in-a-well quantum dot infrared photodetectors. The capability in temperature sensing is also demonstrated. Distinct response peaks at 5.0 μm and 8.6 μm were observed in the photocurrent spectra with working temperature up to 140K. The two peaks correspond to the transition paths from the quantum dot ground state to the quantum well state and the quantum dot excited state, respectively. At 77K, the response ratio of the 8.6 μm peak over the 5.0 μm peak changes from 0.29 at -3V to 5.8 at + 4.8V. Excellent selectivity between the two peaks with bias voltage makes the device attractive for third-generation imaging systems with pixel-level multicolor functionality.

Bias-tunable IR photodetector based on asymmetrically doped GaAs/AlGaAs double-quantum-well nanomaterial for remote temperature sensing

“…Multispectral infrared detection can be effectively implemented for temperature sensing and thermal imaging [10,18]. By monitoring the ratio of photocurrents in two single spectral ranges, one can accurately determine the temperature of object, regardless of its emissivity and geometrical factors [10].…”

Facile synthesis and optical properties of colloidal quantum dots/ZnO composite optical resonators

“…1,2 In this research eld, great efforts have been devoted to the studies of the combination of QDs with optical microcavities, which is very important both for fundamental research on light-matter interactions and for optics-and photonics-related applications. Most of the previously described composite systems feature a distributed Bragg reector (DBR) structure and selfassembled QDs, which have allowed great progress in the development of single-photon sources, 3,4 photodetectors, 5,6 and cavity lasers. 7,8 However, the above QDs (used as gain materials in these composites) were mostly based on III-V semiconductors prepared by molecular beam epitaxy (MBE) 9 or metal-organic chemical vapor deposition (MOCVD).…”

Optimization of InAs/GaAs submonolayer quantum dots grown on GaAs(001) with a (2×4) surface reconstruction for infrared photodetectors

“…[101], quantum dots in a double well (DDWELL)[102], or confinement-enhanced dots-in-a-well (CE-DWELL)[103]. In parallel, a new way to grow the QDs was also proposed and is based on a submonolayer deposition technique.…”