Voltage-switchable photocurrents in single-walled carbon nanotube–silicon junctions for analog and digital optoelectronics

Kim, Young Lae; Jung, Hyun Young; Park, Sora; Li, Bo; Liu, Fangze; Hao, Ji; Kwon, Young–Kyun; Jung, Yung Joon; Kar, Swastik

doi:10.1038/nphoton.2014.1

Cited by 63 publications

(60 citation statements)

References 27 publications

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“…[12,13] To develop smart electronic devices, different stimuli have been adoptedt ot rigger as ignal change and further used to designv arious switchable systems. [14] To date, severals timuli including potential, wavelength, and pH value are applied to switch the photocurrentd irection. [15][16][17] Recently,n ew systems, such as hybrid n-/p-type semiconductors, [18] TiO 2 -supported Au nanoparticles, [19] and TiO 2 -supported Ag nanoclusters, [20] have been reported to tune the photocurrent direction.…”

supporting

confidence: 82%

Switched Photocurrent on Tin Sulfide‐Based Nanoplate Photoelectrodes

et al. 2017

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A new type of SnS nanoplate photoelectrode is prepared by using a mild wet-chemical method. Depending on the calcination temperatures, SnS -based photoelectrodes can either retain their n-type nature with greatly enhanced anodic photocurrent density (ca. 1.2 mA cm at 0.8 V vs. Ag/AgCl) or be completely converted into p-type SnS to generate approximately 0.26 mA cm cathodic photocurrent density at -0.8 V vs. Ag/AgCl. The dominance of sulfur and tin vacancies are found to account for the dramatically different photoelectrochemical behaviors of n-type SnS and p-type SnS photoelectrodes. In addition, the band structures of n-type SnS and p-type SnS photoelectrodes are also deduced, which may provide an effective strategy for developing SnS /SnS films with controllable energy-band levels through a simple calcination treatment.

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supporting

confidence: 82%

Switched Photocurrent on Tin Sulfide‐Based Nanoplate Photoelectrodes

et al. 2017

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“…We believe that those aspects of exciton binding and defects/traps in organic semiconductors are key controlling elements of the response time delay, making it longer than those of inorganic ones (see Supplementary Table S1). [21][22][23][24][25][26] As an additional experiment, we attempted to extend our diode circuit applications to OR and AND gate logic switching, as the optical inverting (NOT gating) in Figure 3e appeared successful. To study the OR and AND functions, we modified the circuits as shown in Figures 6a and b, using a 56-MΩ external resistor to rapidly discharge any accumulated carriers.…”

Section: Resultsmentioning

confidence: 99%

“…13,[21][22][23][24][25] In fact, dynamic PV switching has only been reported for its limited practical applications with inorganic nanostructure junctions, as seen in Supplementary Table S1. 13,[21][22][23][24][25] Simply speaking, instantaneously built-in voltage can be used as a switching signal induced by energetic photons (ON/OFF: photo-induced charge collection/recombination), as any semiconductor thin film possesses electrodes for charge collection and recombination within a diode array. This type of self-powered voltage generation can have various applications, including ultraviolet (UV) and visible light detection, biological and chemical study in a wireless health-care platform, powerless communications and so on.…”

Section: Introductionmentioning

confidence: 99%

Deep blue energy harvest photovoltaic switching by heptazole-based organic Schottky diode circuits

et al. 2016

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We report novel photovoltaic (PV) switching based on the low exciton-binding energy property of an organic heptazole (C 26 H 16 N 2 ) thin film after fabrication of an heptazole-based Schottky diode. The Schottky diode cell displayed an instantaneous voltage of 0.3 V as an open circuit voltage (V OC ) owing to the work function difference between the Schottky and ohmic electrode under deep blue illumination. Four tandem diode cells therefore produced~1.2 V. As a PV diode circuit can be formed using an even number of diodes, a photo-excited charge accumulation takes place, generating V OC in the central electrode of the tandem diode array by illuminating one half of the array. An electron-hole recombination then also takes place in that electrode by illuminating the other half, making the V OC decrease to 0 V. Utilizing this charge accumulation and recombination under deep blue illumination, we successfully demonstrated quite fast PV optical switching, logic gating and, ultimately, the gate switching of an organic field-effect transistor. We therefore concluded that our self-powered PV-induced switching was novel and promising enough to open a new door for energy harvest-related device applications in organics.

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“…In a short summary, photo-induced charge trapping and detrapping play the key role in optoelectronic resistive switching effect. Other than the materials stated earlier, carbon nanotube, complex oxide, perovskite, quantum dots, and so on, also show optoelectronic resistive switching effects [57][58][59][60]. The applications of optoelectronic memristor including logic, memory, neuromorphic devices, and their performance will be discussed in the following sections.…”

Section: Optoelectronic Resistive Switching Materials and Devicesmentioning

confidence: 92%

Multifunctional Optoelectronic Device Based on Resistive Switching Effects

Tan¹,

Liu²,

Li³

2018

Recent Development in Optoelectronic Devices

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Optoelectronic resistive switching devices, utilizing optical and electrical hybrid methods to control the resistance states, offer several advantages of both photons and electrons for high-performance information detecting, demodulating, processing, and memorizing. In the past decades, optoelectronic resistive switching devices have been widely discussed and studied due to the potential for parallel information transmission and processing. In this chapter, recent progresses on the optoelectronic resistive switching mechanism, materials, and devices will be introduced. Then, their performance such as photoresponsivity, on/off ratio, as well as retention will be investigated. Furthermore, possible applications of the optoelectronic resistive switching considering logic, memory, neuromorphic, and image-processing devices will be summarized. In the end, the challenges and possible solutions of optoelectronic resistive switching devices for the next-generation information technology will be discussed and prospected. Recent Development in Optoelectronic Devices 28high potential for integrating processor and memory together, which eliminates the bottleneck between memory and processor in the modern von Neumann-computing architecture, thus allowing high parallel data processing [21][22][23][24][25][26]. However, the electronic memristor-based architecture still has bandwidth limitation in high-frequency data communicating between different modulators.The combination of photons and memristor-based circuits will integrate the advantages of photons in a high-speed data transmission and memristors in parallel in-memory computing and may open up a new era for future computing owing to the high bandwidth and lowpower consumption. Moreover, the optoelectronic-based memristive system will extend the application of memristor-based architecture to image or visual information processing. As shown in Figure 2, with the increasing demands of mobile computing in human daily life, wearable devices, health-care devices, and human-machine interacting devices including intelligent image sensor, video monitor, invisible touch screen, electronic eyes, wearable heart or blood monitoring and display devices, smart processor, and even brain-implantable devices will be more and more important for an efficient and comfortable way for our better life, body health, daily work, and communication [27][28][29][30][31][32]. The optoelectronic memristor-based architecture, wherein both photons and electrons are used for parallel data processing and communicating between input-output (I/O) devices and the in-memory processor, may provide such a platform for the mobile computing.In this chapter, recent developments on optoelectronic memristor materials and devices, and applications including logic, memory, memristor, and neuromorphic devices will be summarized, then their capability in future optoelectronic on-chip interconnection, in-memory computing, brain-inspired computing, and visual information processing will be evaluated. Figure 2. Possible opto...

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Voltage-switchable photocurrents in single-walled carbon nanotube–silicon junctions for analog and digital optoelectronics

Cited by 63 publications

References 27 publications

Switched Photocurrent on Tin Sulfide‐Based Nanoplate Photoelectrodes

Switched Photocurrent on Tin Sulfide‐Based Nanoplate Photoelectrodes

Deep blue energy harvest photovoltaic switching by heptazole-based organic Schottky diode circuits

Multifunctional Optoelectronic Device Based on Resistive Switching Effects

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