Voltage regulation and efficiency optimization in a 100 MHz series resonant DC-DC converter

Sepahvand, Alihossein; Scandolat, Luca; Zhang, Yuanzhe; Maksimović, Dragan

doi:10.1109/apec.2015.7104638

Cited by 10 publications

(5 citation statements)

References 17 publications

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“…In the Gen I design, the integrated gate driver utilizes a DCFL inverter and a totem-pole E-mode transistor bridge. 39,40,42) As illustrated in Fig. 9(a), to turn on the power switch, the pull-up transistor E up is switched on to supply a charge current I source for the gate of the power switch.…”

Section: Development Of Gan Power Icsmentioning

confidence: 99%

“…[27][28][29][30][31][32] Many efforts have also been made towards integrated GaN gate driving circuits and GaN power converters. [33][34][35][36][37][38][39][40] In recent years, the commercialization of p-GaN gate HEMT technology has drawn plenty of attention, and great efforts have been made towards the development of power ICs on such platforms. 41,42) This paper will discuss the development of GaN power integration technology based on a commercially available p-GaN gate HEMT platform, with a focus on critical technical issues.…”

Section: Introductionmentioning

confidence: 99%

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GaN power IC technology on p-GaN gate HEMT platform

Wei¹,

Tang²,

Xie³

et al. 2020

Jpn. J. Appl. Phys.

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GaN power ICs provide an elegant solution for high-frequency power switching applications. This paper will first discuss the GaN power integration platform, which requires not only a high-voltage power switch, but also peripheral low-voltage transistors, diodes, resistors, capacitors, etc. The low-voltage components are preferably fabricated using the same process steps of the power switch to be cost-effective. As an example of a GaN power IC, an integrated gate driving circuit is demonstrated. By adopting a charge pump unit, the novel gate driver in this work enables rail-to-rail output voltage, fast switching speed and enhanced reliability. For the design of GaN power ICs, the unique device physics of GaN power devices should be carefully considered. The Vth of the GaN power transistor is found to be bias-dependent and to exhibit dynamic behavior during power switching operation. The mechanism of this dynamic Vth will be explained and its impact on circuit operation will be illustrated.

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Section: Development Of Gan Power Icsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

GaN power IC technology on p-GaN gate HEMT platform

Wei¹,

Tang²,

Xie³

et al. 2020

Jpn. J. Appl. Phys.

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“…These chips have been shown to perform with high efficiency when operating in the VHF range [9]- [12]. As stated above, the gain and compensation networks are implemented here as L-section matching networks (see Fig.…”

Section: Capacitive Wpt Architecturementioning

confidence: 99%

High power transfer density and high efficiency 100 MHz capacitive wireless power transfer system

Sepahvand

Kumar

Afridi

et al. 2015

2015 IEEE 16th Workshop on Control and Modeling for Power Electronics (COMPEL)

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This paper introduces a very high frequency (VHF) capacitive wireless power transfer architecture capable of achieving very high power transfer densities and high efficiencies. High power density is achieved using an operating frequency of 100 MHz and through appropriate design of matching networks. High efficiency is achieved using a custom designed half-bridge GaN chip with integrated gate drivers. To validate performance of the proposed architecture, a prototype capacitive wireless power transfer system is built and tested. Experimental results demonstrate that the system transfers 2.5 W of power across a 1 pF capacitive interface at a very high power transfer density of 1.1 W/mm 2 , at close to 90% efficiency.

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“…The typical structure of a coreless planar transformer is shown in Figure 1. The primary side coil and the secondary side coil of the PCB planar transformer are respectively printed on the upper and lower layers of the PCB board, and the coils are coaxial [12]. As shown in Figure 1, the main structural parameters of the PCB planar transformer include:…”

Section: Coreless Planar Transformermentioning

confidence: 99%

Design of an Active Equalization System for Lithium-ion Battery Based on Coreless Planar Transformer

You¹,

Dai²,

Yuan³

et al. 2019

dteees

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In view of the problems caused by the inconsistency of the battery cells in the battery pack, considering the advantages and disadvantages of active equalization and passive equalization, a DC/DC active equalization scheme based on coreless planar transformer is proposed. The method of design and optimization of planar transformer is proposed. The DC/DC equalization scheme using phase-shifted fullbridge soft-switching DC/DC converter circuit is designed. The test was carried out with twelve single lithium-ion battery cells connected in series. The research showed that the overall efficiency is over 91% at 2A output current, and the highest efficiency is 93.5%. Compared with the traditional transformer, the power density is increased by 5.25 times and the volumetric specific power is increased by 5.93 times.

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Voltage regulation and efficiency optimization in a 100 MHz series resonant DC-DC converter

Cited by 10 publications

References 17 publications

GaN power IC technology on p-GaN gate HEMT platform

GaN power IC technology on p-GaN gate HEMT platform

High power transfer density and high efficiency 100 MHz capacitive wireless power transfer system

Design of an Active Equalization System for Lithium-ion Battery Based on Coreless Planar Transformer

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