2011
DOI: 10.1063/1.3630010
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Voltage dependence of a stochastic model of activation of an alpha helical S4 sensor in a K channel membrane

Abstract: The voltage dependence of the ionic and gating currents of a K channel is dependent on the activation barriers of a voltage sensor with a potential function which may be derived from the principal electrostatic forces on an S4 segment in an inhomogeneous dielectric medium. By variation of the parameters of a voltage-sensing domain model, consistent with x-ray structures and biophysical data, the lowest frequency of the survival probability of each stationary state derived from a solution of the Smoluchowski eq… Show more

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Cited by 3 publications
(9 citation statements)
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“…7 and 8). The three-stage rate functions have a similar voltage dependence to those obtained from an electrostatic model of S4 activation [23], where approximately 1e is transferred across the membrane for each of the three activation steps per subunit, and provides a good fit to an empirical three-stage model of K + channel activation [24].…”
Section: -3mentioning
confidence: 69%
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“…7 and 8). The three-stage rate functions have a similar voltage dependence to those obtained from an electrostatic model of S4 activation [23], where approximately 1e is transferred across the membrane for each of the three activation steps per subunit, and provides a good fit to an empirical three-stage model of K + channel activation [24].…”
Section: -3mentioning
confidence: 69%
“…The derived rate functions account for the asymmetry of α n and β n in terms of the effective charge for the transitions of the activation process, which may be calculated from the voltagedependence of the barrier heights for each stage of activation of the S4 sensor [23]. If the opening of a K + ion channel occurs upon the activation of each of four independent two-stage voltage sensors, the K + conductance may be expressed as g K n 4 , where n is the solution to the corresponding rate equation with derived rate functions α n,2 and β n,2 .…”
Section: Discussionmentioning
confidence: 99%
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“…As the relaxation within each deep well is rapid, the probability density may be expressed as the product of the stationary distribution and a survival probability that is the solution of a rate equation [13]. By approximating the potential function for the voltage sensor by a square well potential, the low frequency component of the solution of the Smoluchowski equation may be expressed as differential equations for the survival probabilities of the closed and open states [14,15], and is similar to that obtained from a numerical solution [16].…”
Section: Introductionmentioning
confidence: 99%
“…The master equation may be derived from a Smoluchowski equation applied to the resting and barrier regions of an energy landscape for each of the S4 sensors in the domains DI to DIV [14,15]. The translocation of the S4 segment through the gating pore for Na+ (or K+) channels requires sufficient energy to overcome several barriers that are dependent on the Coulomb force between positively charged residues on the S4 sensor and negatively charged residues on neighboring helices, the dielectric boundary force, the electric field between internal and external aqueous crevices, and hydrophobic forces [16].…”
Section: Voltage Clamp Of a Na+ Channel With Two Ac-tivation Sensorsmentioning
confidence: 99%