Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

Sánchez-Martín, H.; Matéos, J.; Novoa, J. A.; Delgado-Notario, Juan A.; Meziani, Yahya Moubarak; Pérez, S.; Theveneau, Hadrien; Ducournau, Guillaume; Gaquière, Christophe; González, T.; Íñiguez-de-la-Torre, I.

doi:10.1063/1.5041507

Cited by 15 publications

(10 citation statements)

References 20 publications

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“…Concerning GaN-based SSDs, even if not showing an evident rectifying behaviour as showed by narrow InGaAs or GaAs SSDs [18,21,22], they have demonstrated their validity as RF detectors, exhibiting a responsivity up to 100 V W −1 at 0.30 THz [24] and 2 V W −1 (in free-space) at 0.69 THz [25]. Indeed, recently, more complex structures have been studied, such as Gated-SSDs (GSSDs), which are SSDs with a Schottky gate [26], or gated nanowire field-effect rectifiers (NW-FERs) [27], with responsivities of 600 V W −1 and 3000 V W −1 , respectively.…”

Section: Introductionmentioning

confidence: 99%

Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

et al. 2020

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The zero-bias microwave detection capability of self-switching diodes (SSDs) based on AlGaN/GaN is analyzed in a wide temperature range, from 10 K to 300 K. The measured responsivity shows an anomalous enhancement at low temperature, while the detected voltage exhibits a roll-off in frequency, which can be attributed to the presence of surface and bulk traps. To gain a deep insight into this behavior, a systematic DC and AC characterization of the diodes has been carried out in the mentioned temperature range. DC results confirm the existence of traps and AC measurements allow us to identify their properties. In particular, impedance studies enable to distinguish two types of traps: at the lateral surfaces of the channel, with a wide spread of relaxation times, and in the bulk.

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Section: Introductionmentioning

confidence: 99%

Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

et al. 2020

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“…The noise equivalent power ( NEP ) is defined as NEP = (4 k B TR D ) 1/2 /[( R D 2 /2)( ∂ 2 I / ∂V 2 )] [ 26 ] and is represented in Figure 10 in the two states of the DC switch. In the OFF-state, the NEP takes values of some fW/√Hz , whereas in the ON-state it reaches about 1 nW/√Hz at +5 V. This means that the microwave switch is a very low-noise device in its ON-state, which represents a major advantage for high-frequency components.…”

Section: Atomic-scale Ferroelectric Junctions As Microwave Switchementioning

confidence: 99%

Perspectives on Atomic-Scale Switches for High-Frequency Applications Based on Nanomaterials

2021

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Nanomaterials science is becoming the foundation stone of high-frequency applications. The downscaling of electronic devices and components allows shrinking chip’s dimensions at a more-than-Moore rate. Many theoretical limits and manufacturing constraints are yet to be taken into account. A promising path towards nanoelectronics is represented by atomic-scale materials. In this manuscript, we offer a perspective on a specific class of devices, namely switches designed and fabricated using two-dimensional or nanoscale materials, like graphene, molybdenum disulphide, hexagonal boron nitride and ultra-thin oxides for high-frequency applications. An overview is provided about three main types of microwave and millimeter-wave switch: filament memristors, nano-ionic memristors and ferroelectric junctions. The physical principles that govern each switch are presented, together with advantages and disadvantages. In the last part we focus on zirconium-doped hafnium oxide ferroelectrics (HfZrO) tunneling junctions (FTJ), which are likely to boost the research in the domain of atomic-scale materials applied in engineering sciences. Thanks to their Complementary Metal-Oxide Semiconductor (CMOS) compatibility and low-voltage tunability (among other unique physical properties), HfZrO compounds have the potential for large-scale applicability. As a practical case of study, we present a 10 GHz transceiver in which the switches are FTJs, which guarantee excellent isolation and ultra-fast switching time.

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“…Devices fabricated with this semiconductor have exhibited a high responsivity at moderately high frequencies. Not only SSDs [9], but also other similar structures such as gated-SSDs (G-SSDs) [10], gated nanowires field-effect rectifiers (NW-FERs) [11], as well as high-electron mobility transistors (HEMTs) [12].…”

Section: Introductionmentioning

confidence: 99%

Bias-dependence of surface charge at low temperature in GaN Self-Switching Diodes

Pérez-Martín

Íñiguez-de-la-Torre

González

et al. 2021

2021 13th Spanish Conference on Electron Devices (CDE)

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In this work, with the help of a semi-classical twodimensional Monte Carlo (MC) simulator, we study the DC current-voltage curves of Self-Switching Diodes (SSDs) fabricated on an AlGaN/GaN heterostructure from 100 K up to room temperature. Due to the very narrow channel of the SSDs, the presence of surface effects plays a key role not only on their DC behavior but also on their RF detection performance. The evolution with temperature of the negative surface charge density σ at the etched sidewalls of the SSD is the key quantity to explain the measurements. At 300 K, MC simulations with a constant value of σ are able to replicate very satisfactorily the experiments. However, to reproduce the shape of the I-V curve at low temperatures, a more realistic approach, where σ depends not only on T, but also on the applied bias V, is necessary.

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Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

Cited by 15 publications

References 20 publications

Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

Perspectives on Atomic-Scale Switches for High-Frequency Applications Based on Nanomaterials

Bias-dependence of surface charge at low temperature in GaN Self-Switching Diodes

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