Voltage-controlled magnetic anisotropy enabled by resistive switching

Ultralow Electric Current-Assisted Magnetization Switching due to Thermally Engineered Magnetic Anisotropy

“…The remarkable progress in this field, particularly the effective electric field modulation of magnetic anisotropy, is of great technical significance for realizing fast and low-power magnetized switches. , Approaches for the traditional electrical manipulation of magnetic anisotropy include utilizing magnetoelectric heterostructures, field-effect devices with solid or electrolyte gates, and magnetoionic systems, all of which require additional fabrication and modulation processes as well as a complicated device architecture. , For example, the magnetoelectric heterostructures need an expensive single-crystal substrate, additional electrode design, and control circuit, which bring many difficulties to device design and preparation and are not conducive to device integration. Recently, a new mechanism of current regulation of magnetism based on thermally induced anisotropy reorientation has received considerable research interest. , Thermally assisted magnetization switching in STT-based spintronics has been demonstrated with maximum torque efficiency due to the heating-induced orthogonal arrangement of injected spin polarization and free layer magnetization …”

“…Recently, a new mechanism of current regulation of magnetism based on thermally induced anisotropy reorientation has received considerable research interest. 16,17 Thermally assisted magnetization switching in STT-based spintronics has been demonstrated with maximum torque efficiency due to the heating-induced orthogonal arrangement of injected spin polarization and free layer magnetization. 18 Perpendicular magnetic anisotropy (PMA) materials are of great importance for spintronics because of their unique advantages including higher device density and much smaller switching current in STT-and SOT-based devices.…”