Voltage-controlled magnetic anisotropy based physical unclonable function

Meo, Andrea; Garzón, Esteban; Rose, Raffaele De; Finocchio, G.; Lanuzza, Marco; Carpentieri, Mario

doi:10.1063/5.0166164

Cited by 4 publications

(2 citation statements)

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“…Typically, it involves an MTJ device characterized by a high resistance-area (RA) product. [69][70][71] As a result, the current that passes through the thin insulating barrier is extremely minimal, enhancing the energy efficiency of VCMA and making it appealing for a wide range of applications, such as MRAMs, 72,73 random number (RN) generators, [74][75][76] physically unclonable functions (PUFs), [77][78][79] neuromorphic computing, 80,81 and spintronic oscillators. [82][83][84][85][86][87] In this article, our primary focus is the VCMA-MRAM, which is discussed in Secs.…”

Section: Introductionmentioning

confidence: 99%

Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectives

Mishra,

Sravani,

Bose

et al. 2024

Journal of Applied Physics

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Electronic spins provide an additional degree of freedom that can be used in modern spin-based electronic devices. Some benefits of spintronic devices include nonvolatility, energy efficiency, high endurance, and CMOS compatibility, which can be leveraged for data processing and storage applications in today's digital era. To implement such functionalities, controlling and manipulating electron spins is of prime interest. One of the efficient ways of achieving this in spintronics is to use the electric field to control electron spin or magnetism through the voltage-controlled magnetic anisotropy (VCMA) effect. VCMA avoids the movement of charges and significantly reduces the Ohmic loss. This article reviews VCMA-based spintronic devices for magnetic memory applications. First, we briefly discuss the VCMA effect and various mechanisms explaining its physical origin. We then mention various challenges in VCMA that impede it for practical VCMA-based magnetic memory. We review various techniques to address them, such as field-free switching operation, write error rate improvement, widening the operation window, enhancing the VCMA coefficient, and ensuring fast-read operation with low read disturbance. Finally, we draw conclusions outlining the future perspectives.

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Section: Introductionmentioning

confidence: 99%

Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectives

Mishra,

Sravani,

Bose

et al. 2024

Journal of Applied Physics

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“…Spintronic PUFs are being developed as an alternative to tackle these challenges and enable the development of on-chip PUFs integrated with CMOS technology. − A recent study demonstrated the secure access and data protection capabilities of CMOS-integrated on-chip spintronic PUFs within in-memory computing . However, despite advances in spintronic or MRAM-based PUFs, some of the crucial PUF properties remain to be verified for practical applications.…”

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confidence: 99%

Highly Reliable Magnetic Memory-Based Physical Unclonable Functions

Kang,

Han,

Lee

et al. 2024

ACS Nano

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Magnetic random-access memory (MRAM), which stores information through control of the magnetization direction, offers promising features as a viable nonvolatile memory alternative, including high endurance and successful large-scale commercialization. Recently, MRAM applications have extended beyond traditional memories, finding utility in emerging computing architectures such as in-memory computing and probabilistic bits. In this work, we report highly reliable MRAM-based security devices, known as physical unclonable functions (PUFs), achieved by exploiting nanoscale perpendicular magnetic tunnel junctions (MTJs). By intentionally randomizing the magnetization direction of the antiferromagnetically coupled reference layer of the MTJs, we successfully create an MRAM-PUF. The proposed PUF shows ideal uniformity and uniqueness and, in particular, maintains performance over a wide temperature range from −40 to +150 °C. Moreover, rigorous testing with more than 1584 challenge−response pairs of 64 bits each confirms resilience against machine learning attacks. These results, combined with the merits of commercialized MRAM technology, would facilitate the implementation of MRAM-PUFs.

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Nanosecond Magneto‐Ionic Control of Magnetism Using a Resistive Switching HfO₂ Gate Oxide

Jeong,

Park,

Kang

et al. 2024

Adv Elect Materials

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Voltage‐controlled magnetism (VCM) offers an efficient operating method for various spintronic applications, with reduced power consumption compared to conventional current‐driven technologies. Among the VCM mechanisms, magneto‐ionic control provides large modulation and non‐volatile characteristics. However, its operating speed is limited to a microsecond timescale due to slow ion migration, which must be improved for practical device applications. Here, the nanosecond operation of magneto‐ionic VCM in a Ta/CoFeB/MgO/AlOx structure by introducing an HfO2 gate oxide with resistive switching characteristics is demonstrated. By inducing soft breakdown in the HfO2 gate oxide, the coercivity of the perpendicularly magnetized CoFeB can be controlled by 20% with a 20 ns gate voltage of ≈7 MV cm−1. This nanosecond magneto‐ionic VCM performance is maintained after repeated operations up to 10 000 cycles. Further, by utilizing an HfO2 gate in a spin‐orbit torque (SOT) device, the ability to control field‐free SOT switching polarity with nanosecond gate voltages is demonstrated. These findings provide a novel pathway to realize nanosecond, non‐volatile VCM for low‐power spintronic applications.

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Voltage-controlled magnetic anisotropy based physical unclonable function

Cited by 4 publications

References 50 publications

Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectives

Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectives

Highly Reliable Magnetic Memory-Based Physical Unclonable Functions

Nanosecond Magneto‐Ionic Control of Magnetism Using a Resistive Switching HfO₂ Gate Oxide

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Voltage-controlled magnetic anisotropy based physical unclonable function

Cited by 4 publications

References 50 publications

Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectives

Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectives

Highly Reliable Magnetic Memory-Based Physical Unclonable Functions

Nanosecond Magneto‐Ionic Control of Magnetism Using a Resistive Switching HfO2 Gate Oxide

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Product

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Nanosecond Magneto‐Ionic Control of Magnetism Using a Resistive Switching HfO₂ Gate Oxide