Voltage controlled awakening of memristor-like dynamic current–voltage loops of ferroelectric triglycine sulfate

Abstract

For the study of polarization reversal features in the structure of "mixed ionicelectronic conductor -on -ferroelectric" type, the hydrogen bonded molecular ferroelectric crystal triglycine sulphate (TGS) is used. The dynamic currant-voltage (I-V-) loops of thin TGS plates of polar (010) cut with dissimilar electrodes on the opposite surfaces (vacuum deposited Ag and Ag-paste diluted with a water-ethanol mixture) are investigated. After electroforming in the low-voltage vicinity of coercive voltage, during further cycling, a reversible transformation of I-V-loop shape occurs from typical of non-linear dielectrics to typical of memristive systems and than to typical of ferroelectrics (and vice versa) with a sequential increase (decrease) of drawing voltage amplitude. Such "awakening" and "falling asleep" of I-V-loops of the memristor type is apparently associated with reversible electromigration and accumulation of charged species (e.g., protons), in the hydrated surface layer of TGS as a component of electrochemical capacitor-on-ferroelectric structure. The observed transformation can be explained by considering the coupled ion transfer and polarization reversal taking into account the swinging of the boundary of the built-in chemical inhomogeneity under conditions of linear and/or nonlinear dynamics of ion drift and ionic concentration polarization caused by charged species transfer under the applied voltage.

The memristor: Principle, mechanism, and application

“…In addition, memductance is a single-valued function of u(t), in other words, magnetic flux changes with time, and corresponding voltage (Faraday electromagnetic induction) will be generated. While the ideal voltage-controlled memristor will remember the voltage through it, reflected as a memductance change [10]. Like the ideal currentcontrolled memristor, the memristor's unique controllable, programmable changes make the circuit design more exciting.…”

Advances in Emerging Photonic Memristive and Memristive‐Like Devices

“…[ 23 , 24 , 25 , 26 ] Whether these unique devices can be classified as memristors is debatable at this stage even though they exhibit hysteresis curve behavior similar to memristors. [ 27 , 28 , 29 ] In order to avoid confusion, the name “memristive‐like devices” is preferred to use (memristive devices and memristive‐like devices are strictly distinguished in this review). Until now, memristive and memristive‐like devices have set off a huge research interest, and they prove to be the indispensable elements in the next generation of computer architecture owing to their small size, simple structure, fast response, low power, and the potential to eliminate the von Neumann bottleneck.…”