Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices

Abstract

As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies. Alternatively, magnetoelectric materials are predicted to enable low-power magnetization control, a solution with limited device-level results. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO3 and ferromagnetic CoFe, for writing, and spin-to-charge current conversion between CoFe and Pt, for reading. We show that, upon the electrical switching of the BiFeO3, the magnetization of the CoFe can be reversed, giving rise to different voltage outputs. Through additional microscopy techniques, magnetization reversal is linked with the polarization state and antiferromagnetic cycloid propagation direction in the BiFeO3. This study constitutes the building block for magnetoelectric spin-orbit logic, opening a new avenue for low-power beyond-CMOS technologies.

Nonvolatile Electric Control of Antiferromagnet CrSBr

“…Taking a step further beyond the simple electric field control of magnetism, ferroelectric elements can provide both an electric field and the further advantage of nonvolatility as their electric polarization is kept even if a voltage bias is not applied. The combination of ferromagnetic and ferroelectric (or multiferroic) materials has already enabled advanced devices such as the multiferroic tunnel junction − and the magnetoelectric spin–orbit. − …”