2018
DOI: 10.1541/ieejias.138.864
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Voltage Balancing Control based on Gate Signal Delay in Series Connection of SiC-MOSFET

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Cited by 3 publications
(2 citation statements)
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“…Therefore, to address this issue, we employed series-connected power semiconductors without the need for large magnetic materials. Currently, research is underway on series connection and switching beyond the rated voltage of a single discrete semiconductor [36][37][38][39][40][41][42][43][44][45][46][47][48][49]. One of the specific challenges with the series connection of semiconductors is the occurrence of voltage differences between them, which can lead to voltages surpassing the rating of a single semiconductor, resulting in its destruction.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, to address this issue, we employed series-connected power semiconductors without the need for large magnetic materials. Currently, research is underway on series connection and switching beyond the rated voltage of a single discrete semiconductor [36][37][38][39][40][41][42][43][44][45][46][47][48][49]. One of the specific challenges with the series connection of semiconductors is the occurrence of voltage differences between them, which can lead to voltages surpassing the rating of a single semiconductor, resulting in its destruction.…”
Section: Introductionmentioning
confidence: 99%
“…In order to overcome this problem, several techniques have been studied, such as using RC snubbers (7) and gate balance cores (8) , digital controls (9) . However, RC snubbers and gate balance cores have the problem of increasing switching losses, digital controls have the response delay time problem due to the processing speed in the digital control technique.…”
Section: Introductionmentioning
confidence: 99%