2008
DOI: 10.1016/j.microrel.2008.07.017
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Voltage and temperature effect on dielectric charging for RF-MEMS capacitive switches reliability investigation

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Cited by 59 publications
(37 citation statements)
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“…As reported by Lamhamdi et al [12], more silicon-rich SiN x films have faster charge decay with time. This could partially explain why the HF material exhibits faster charge decay when compared to the LF one.…”
Section: D) Hf Versus Lf Deposition Recipessupporting
confidence: 62%
“…As reported by Lamhamdi et al [12], more silicon-rich SiN x films have faster charge decay with time. This could partially explain why the HF material exhibits faster charge decay when compared to the LF one.…”
Section: D) Hf Versus Lf Deposition Recipessupporting
confidence: 62%
“…The charging dynamics strongly depends on the dielectric type, the applied voltage and the architecture of the system. It involves many physical mechanisms, not all of which are fully understood, but it is commonly accepted that charge is injected from one of the electrodes and trapped within the dielectric [9], [10]. Dielectric charging can be found in RF MEMS as well as in other types of micro devices where dielectric materials contacting with metals are a part of their topologies [11]- [13].…”
Section: Introductionmentioning
confidence: 99%
“…Then the tip is used to scan the charged area. In these experiments, an important result not yet fully related to switches performance, is the evolution of the deposited charges which showed that the charges are not spreading on the surface ( fig.5a) (Zaghloul 2008).…”
Section: Kelvin Probe Force Microscopy (Kpfm)mentioning
confidence: 90%