Voltage and temperature dependence of random telegraph noise in highly scaled HKMG ETSOI nFETs and its impact on logic delay uncertainty

Miki, Hidejiro; Yamaoka, Masanao; Frank, D.J.; Cheng, K. Y.; Park, D.-G.; Leobandung, E.; Torii, K.

doi:10.1109/vlsit.2012.6242499

Cited by 20 publications

(10 citation statements)

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“…As mentioned in the introduction, early works [6][7][8][9][10] often estimated ΔVth by ΔId/gm(Vdd), where both ΔId and gm were obtained under Vg=Vdd. This is effectively measuring the shift of IV at Vg=Vdd, as marked by the point 'B' in Fig.…”

Section: A a Comparison Between δId/gm(vdd) And δVth(vth)mentioning

confidence: 99%

“…The increased number of devices per chip also leads to larger statistical spread [1,2] and high data transmission rate requires tight control of fluctuations [3]. Fluctuations have become a major concern for circuit design and have attracted many attentions recently [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. It has been reported that current fluctuation in some fresh devices can be over the typical device lifetime criterion of 10% [5].…”

Section: Introductionmentioning

confidence: 99%

“…Fluctuations are commonly observed as the random telegraph noise (RTN) in the drain current, ΔId, under a given evaluated in this way was not given in these works [6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Trigger-When-Charged: A Technique for Directly Measuring RTN and BTI-Induced Threshold Voltage Fluctuation Under Use-<inline-formula> <tex-math notation="LaTeX">${V}_{dd}$ </tex-math> </inline-formula>

Manut

Gao

Zhang

et al. 2019

IEEE Trans. Electron Devices

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Low power circuits are important for many applications, such as IoT. Device variations and fluctuations are challenging their design. Random telegraph noise (RTN) is an important source of fluctuation. To verify a design by simulation, one needs assessing the impact of fluctuation in both driving current, ΔId, and threshold voltage, ΔVth. Many early works, however, only measured RTN-induced ΔId. ΔVth was not directly measured because of two difficulties: its average value is low and it is highly dynamic. Early works often estimated ΔVth from ΔId/gm(Vg=Vdd), where gm is trans-conductance, without giving its accuracy. The objective of this work is to develop a new Trigger-When-Charged (TWC) technique for directly measuring the RTN-induced ΔVth. By triggering the measurement only when a trap is charged, measurement accuracy is substantially improved. It is found that there is a poor correlation between ΔId/gm(Vg=Vdd) and the directly measured ΔVth(Vg=Vth). The former is twice of the latter on average. The origin for this difference is analyzed. For the first time, the TWC is applied to evaluate device-to-device variations of the directly measured RTN-induced ΔVth without selecting devices.

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Section: A a Comparison Between δId/gm(vdd) And δVth(vth)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Trigger-When-Charged: A Technique for Directly Measuring RTN and BTI-Induced Threshold Voltage Fluctuation Under Use-<inline-formula> <tex-math notation="LaTeX">${V}_{dd}$ </tex-math> </inline-formula>

Manut

Gao

Zhang

et al. 2019

IEEE Trans. Electron Devices

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“…Random Telegraph Noise (RTN) is regarded as one of the most serious reliability issues in scaled-down CMOS devices [1][2][3][4][5][6][7][8][9]. Valuable attempts have been made [10,11], but several shortcomings remain to be tackled: (i) The time window (tw), used in a typical RTN test is short (e.g.…”

Section: Introductionmentioning

confidence: 99%

A fast and test-proven methodology of assessing RTN/fluctuation on deeply scaled nano pMOSFETs

Gao

Mehedi

Chen

et al. 2020

2020 IEEE International Reliability Physics Symposium (IRPS)

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Random Telegraph Noise (RTN)/fluctuation is one of the most serious reliability issues in modern deeply scaled CMOS. The current RTN characterization methods need to select devices and can only capture the fast traps, thus it is very difficult to predict and validate device long-term fluctuation behavior. A new fast and test-proven methodology of assessing RTN/fluctuation is proposed in this work. By using the Within Device Fluctuation (WDF), all the devices' fluctuation can be captured. Moreover, WDF can be well explained and simulated as a sum of all the As-grown Traps (AT) induced RTN.

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“…Since the low-voltage operation of MOSFETs degrades the signal-to-noise ratio, we have to identify and reduce the various noise sources. In this sense, the physical origin of LFN is now attracting attention because the random telegraph noise (RTN) exhibited by IC-MOSFET memories will be a key determiner of scaled device performance [21,22,23,24,25]. Some articles have theoretically addressed LFN behavior [11,26,27], but very few papers have paid attention to the LFN behavior in the subthreshold bias range [28,29].…”

Section: Introductionmentioning

confidence: 99%

Empirical and Theoretical Modeling of Low-Frequency Noise Behavior of Ultrathin Silicon-on-Insulator MOSFETs Aiming at Low-Voltage and Low-Energy Regime

Ōmura

2018

Micromachines

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This paper theoretically revisits the low-frequency noise behavior of the inversion-channel silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) and the buried-channel SOI MOSFET because the quality of both Si/SiO2 interfaces (top and bottom) should modulate the low-frequency fluctuation characteristics of both devices. It also addresses the low-frequency noise behavior of sub-100-nm channel SOI MOSFETs. We deepen the discussion of the low-frequency noise behavior in the subthreshold bias range in order to elucidate the device’s potential for future low-voltage and low-power applications. As expected, analyses suggest that the weak inversion channel near the top surface of the SOI MOSFET is strongly influenced by interface traps near the top surface of the SOI layer because the traps are not well shielded by low-density surface inversion carriers in the subthreshold bias range. Unexpectedly, we find that the buried channel is primarily influenced by interface traps near the top surface of the SOI layer, not by traps near the bottom surface of the SOI layer. This is not due to the simplified capacitance coupling effect. These interesting characteristics of current fluctuation spectral intensity are explained well by the theoretical models proposed here.

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Voltage and temperature dependence of random telegraph noise in highly scaled HKMG ETSOI nFETs and its impact on logic delay uncertainty

Cited by 20 publications

References 0 publications

Trigger-When-Charged: A Technique for Directly Measuring RTN and BTI-Induced Threshold Voltage Fluctuation Under Use-<inline-formula> <tex-math notation="LaTeX">${V}_{dd}$ </tex-math> </inline-formula>

Trigger-When-Charged: A Technique for Directly Measuring RTN and BTI-Induced Threshold Voltage Fluctuation Under Use-<inline-formula> <tex-math notation="LaTeX">${V}_{dd}$ </tex-math> </inline-formula>

A fast and test-proven methodology of assessing RTN/fluctuation on deeply scaled nano pMOSFETs

Empirical and Theoretical Modeling of Low-Frequency Noise Behavior of Ultrathin Silicon-on-Insulator MOSFETs Aiming at Low-Voltage and Low-Energy Regime

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