Volatile/Nonvolatile Dual-Functional Atom Transistor

Hasegawa, Tsuyoshi; Itoh, Yaomi; Tanaka, Hirofumi; Hino, Takami; Tsuruoka, Tohru; Terabe, Kazuya; Miyazaki, Hisao; Tsukagoshi, Kazuhito; Ogawa, Takuji; Yamaguchi, Shu; Aono, Masakazu

doi:10.1143/apex.4.015204

Cited by 45 publications

(31 citation statements)

References 18 publications

(26 reference statements)

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“…LISTA is an all solidstate, nonvolatile redox transistor (NVRT) with a resistance switching mechanism based upon the intercalation of Li-ion dopants into a channel of Li 1−x CoO 2 . [27,28] An NVRT device is advantageous for neuromorphic applications because it utilizes the low energy process of ion insertion/extraction for resistance switching while maintaining nonvolatility. This is identical to the charge storage mechanism in batteries, which require external current sources to drive charge/ discharge redox reactions.…”

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confidence: 99%

Li‐Ion Synaptic Transistor for Low Power Analog Computing

et al. 2016

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Nonvolatile redox transistors (NVRTs) based upon Li-ion battery materials are demonstrated as memory elements for neuromorphic computer architectures with multi-level analog states, "write" linearity, low-voltage switching, and low power dissipation. Simulations of backpropagation using the device properties reach ideal classification accuracy. Physics-based simulations predict energy costs per "write" operation of <10 aJ when scaled to 200 nm × 200 nm.

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confidence: 99%

Li‐Ion Synaptic Transistor for Low Power Analog Computing

et al. 2016

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“…While two-terminal devices are able to constitute a completely new type of logic circuits as demonstrated by crossbar circuits [9], three-terminal devices can potentially be applied as logic operation devices that can fully utilize semiconductor circuit technology. Switching mechanisms such as valence-change memory effect, thermochemical memory effect, and electrochemical metallization effect have been previously exploited for three-terminal devices in solids [10–17]. But the performance of the solid resistive-switching three-terminal devices has to be improved in terms of switching rate, endurance and retention.…”

Section: Introductionmentioning

confidence: 99%

Copper atomic-scale transistors

Xie

Kavalenka²,

Röger³

et al. 2017

Beilstein J. Nanotechnol.

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We investigated copper as a working material for metallic atomic-scale transistors and confirmed that copper atomic-scale transistors can be fabricated and operated electrochemically in a copper electrolyte (CuSO4 + H2SO4) in bi-distilled water under ambient conditions with three microelectrodes (source, drain and gate). The electrochemical switching-on potential of the atomic-scale transistor is below 350 mV, and the switching-off potential is between 0 and −170 mV. The switching-on current is above 1 μA, which is compatible with semiconductor transistor devices. Both sign and amplitude of the voltage applied across the source and drain electrodes (U bias) influence the switching rate of the transistor and the copper deposition on the electrodes, and correspondingly shift the electrochemical operation potential. The copper atomic-scale transistors can be switched using a function generator without a computer-controlled feedback switching mechanism. The copper atomic-scale transistors, with only one or two atoms at the narrowest constriction, were realized to switch between 0 and 1G 0 (G 0 = 2e2/h; with e being the electron charge, and h being Planck’s constant) or 2G 0 by the function generator. The switching rate can reach up to 10 Hz. The copper atomic-scale transistor demonstrates volatile/non-volatile dual functionalities. Such an optimal merging of the logic with memory may open a perspective for processor-in-memory and logic-in-memory architectures, using copper as an alternative working material besides silver for fully metallic atomic-scale transistors.

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“…Ion migration in a strong applied electric field is a key phenomenon in the emerging new classes of nanoelectronic devices, especially in resistance random access memory (ReRAM) [1–4], atomic switch [5–7], atom transistor [8] and related memory devices, where electrochemical redox reactions play a crucial role in the generation and annihilation of highly electrically conductive filaments [2, 9, 10], metal nanobridges [5–8] or conductive suboxide at the interface [3]. Various attempts have been carried out using transmission electron microscopy [9, 10], atomic force microscopy [11] and other microscopy techniques to find experimental evidence that such switching behavior is caused by ion migration even at room temperature, through this ion transport is extremely slow at ambient temperatures.…”

Section: Introductionmentioning

confidence: 99%

Room temperature redox reaction by oxide ion migration at carbon/Gd-doped CeO₂heterointerface probed by anin situhard x-ray photoemission and soft x-ray absorption spectroscopies

Tsuchiya

Miyoshi

Yamashita

et al. 2013

Science and Technology of Advanced Materials

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In situ hard x-ray photoemission spectroscopy (HX-PES) and soft x-ray absorption spectroscopy (SX-XAS) have been employed to investigate a local redox reaction at the carbon/Gd-doped CeO2 (GDC) thin film heterointerface under applied dc bias. In HX-PES, Ce3d and O1s core levels show a parallel chemical shift as large as 3.2 eV, corresponding to the redox window where ionic conductivity is predominant. The window width is equal to the energy gap between donor and acceptor levels of the GDC electrolyte. The Ce M-edge SX-XAS spectra also show a considerable increase of Ce3+ satellite peak intensity, corresponding to electrochemical reduction by oxide ion migration. In addition to the reversible redox reaction, two distinct phenomena by the electrochemical transport of oxide ions are observed as an irreversible reduction of the entire oxide film by O2 evolution from the GDC film to the gas phase, as well as a vigorous precipitation of oxygen gas at the bottom electrode to lift off the GDC film. These in situ spectroscopic observations describe well the electrochemical polarization behavior of a metal/GDC/metal capacitor-like two-electrode cell at room temperature.

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Volatile/Nonvolatile Dual-Functional Atom Transistor

Cited by 45 publications

References 18 publications

Li‐Ion Synaptic Transistor for Low Power Analog Computing

Li‐Ion Synaptic Transistor for Low Power Analog Computing

Copper atomic-scale transistors

Room temperature redox reaction by oxide ion migration at carbon/Gd-doped CeO₂heterointerface probed by anin situhard x-ray photoemission and soft x-ray absorption spectroscopies

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Volatile/Nonvolatile Dual-Functional Atom Transistor

Cited by 45 publications

References 18 publications

Li‐Ion Synaptic Transistor for Low Power Analog Computing

Li‐Ion Synaptic Transistor for Low Power Analog Computing

Copper atomic-scale transistors

Room temperature redox reaction by oxide ion migration at carbon/Gd-doped CeO2heterointerface probed by anin situhard x-ray photoemission and soft x-ray absorption spectroscopies

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Product

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Room temperature redox reaction by oxide ion migration at carbon/Gd-doped CeO₂heterointerface probed by anin situhard x-ray photoemission and soft x-ray absorption spectroscopies