Void evolution and porosity under arsenic ion irradiation in GaAs1−xSbxalloys

Alkhaldi, Huda; Kluth, Patrick; Kremer, Felipe; Lysevych, Mykhaylo; Li, L; Ridgway, Mark C; Williams, James S.

doi:10.1088/1361-6463/aa5a78

Cited by 12 publications

(4 citation statements)

References 46 publications

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“…So far, reports of fabricating topdown, Sb-based, 1D nanostructures are based on reactive ion etching (RIE) or focused-ion-beam (FIB) irradiation by chemical and physical means. For example, a porous nanofiber network of GaSb [63], InSb [64,65] and GaAsSb [66] is fabricated by ion irradiation as a by-product of creating a porous layer. Ion irradiation also can be used to create a randomly distributed, vertical, 1D III-Sb nanostructure [67].…”

Section: Top-downmentioning

confidence: 99%

Recent advances in III-Sb nanowires: from synthesis to applications

Yip

Shen

2019

Nanotechnology

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The excellent properties of III-V semiconductors make them intriguing candidates for nextgeneration electronics and optoelectronics. Their nanowire (NW) counterparts further provide interesting geometry and a quantum confinement effect which benefits various applications. Among the many members of all the III-V semiconductors, III-antimonide NWs have attracted significant research interest due to their narrow, direct bandgap and high carrier mobility. However, due to the difficulty of NW fabrication, the development of III-antimonide NWs and their corresponding applications are always a step behind the other III-V semiconductors. Until recent years, because of advances in understanding and fabrication techniques, electronic and optoelectronic devices based on III-antimonide NWs with novel performance have been fabricated. In this review, we will focus on the development of the synthesis of III-antimonide NWs using different techniques and strategies for fine-tuning the crystal structure and composition as well as fabricating their corresponding heterostructures. With such development, the recent progress in the applications of III-antimonide NWs in electronics and optoelectronics is also surveyed. All these discussions provide valuable guidelines for the design of III-antimonide NWs for next-generation device utilization.

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Section: Top-downmentioning

confidence: 99%

Recent advances in III-Sb nanowires: from synthesis to applications

Yip

Shen

2019

Nanotechnology

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“…With the increase of fluence, collision cascades start to overlap and the average separation between point defects decreases. S e plays a key role in the vacancy agglomeration process [25,62], most probably by promoting the diffusion of vacancies. Energetically, the formation of a V Zn -V O divacancy (compared to distant V Zn and V O ) [31] or their higher order cluster [12] (such as (V Zn ) m -(V O ) n type with m ≈ n, as mentioned earlier) are favourable in ZnO.…”

Section: (A) Sample Zno-ih) a Possible Reason For This Is Discussed B...mentioning

confidence: 99%

“…The generation of voids depends on the diffusion coefficient of the concerned open volume defects (material property) and also on the sample temperature [61]. On the other hand, the presence of a foreign atom (chemical impurity, like As in GaSb alloy) can hinder void formation during ion irradiation and amorphization can be reached [62]. To date, limited reports exist on ZnO, such as Si implantation-induced secondary phase formation and amorphization [65].…”

Section: (A) Sample Zno-ih) a Possible Reason For This Is Discussed B...mentioning

confidence: 99%

Clustered vacancies in ZnO: chemical aspects and consequences on physical properties

Pal¹,

Gogurla²,

Das³

et al. 2018

J. Phys. D: Appl. Phys.

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Chemical nature of point defects, their segregation, cluster or complex formation in ZnO is an important area of investigation. In this report, 1.2 MeV Ar ion beam is used to incorporate defects in granular ZnO. Evolution of defective state with irradiation fluence 1 × 10 14 and 1 × 10 16 ions/cm 2 has been monitored using x-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and Raman spectroscopic study. Choice of such fluence regime ensures spatial overlapping of successive ion-target collision cascades so that reorganization of point defects can take place in the form of more stable clusters or in the direction of possible recovery. XPS study shows presence of oxygen vacancies (VO) in the Ar ion irradiated ZnO. Zn(LMM) Auger spectra clearly identifies transition involving metallic zinc in the irradiated samples. Intense PL emission from interstitial Zn (IZn) related shallow donor bound excitons (DBX) is visible in the 10 K spectra for all samples. Although overall PL is largely reduced with irradiation disorder, DBX intensity is increased for the highest fluence irradiated sample. Raman study indicates damage in both zinc and oxygen sub-lattice by energetic ion beam. Representative Raman modes from defect complexes involving VO, IZn and IO are visible after irradiation with intermediate fluence. Further increase of fluence shows, to some extent, a homogenization of disorder. Huge reduction of resistance is also noted for this sample. Certainly, high irradiation fluence induces a qualitative modification of the conventional (and highly resistive) grain boundary (GB) structure of granular ZnO. Low resistive path, involving IZn related shallow donors, across the GB can be presumed to explain resistance reduction. Open volumes (VZn and VO) agglomerate more and more with increasing irradiation fluence and finally get transformed to voids. Results as a whole have been elucidated with a model which emphasizes possible evolution of new defect microstructure that is distinctively different from the GB related disorder. Based on the model, qualitative explanations of commonly observed radiation hardness, colouration and 3 ferromagnetism in disordered ZnO have been put forward. A coherent scenario on disorderaccumulation in ZnO has been presented, which we believe, will guide further discussion on this topic.

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“…These structures have been previously observed on GaSb, 10,[12][13][14][15][16][17][18][19][20][21][22][23][24][25] InSb, 10,12,20,[26][27][28][29][30][31][32][33][34] Si 1−x Ge x , 35,36) and GaAs 1−x Sb x . 37) The recombination of multiple created point defects occurs. However, many point defects survive the recombination process on the abovementioned materials.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of ordered nanostructures on the Ge surface using electron-beam lithography and ion beam irradiation

Murao

Nitta²,

Suzuki

2020

Jpn. J. Appl. Phys.

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Ordered nanostructure fabrication was performed via a two-step process using electron-beam lithography and ion beam irradiation. In the first process, a well-focused electron-beam was used to fabricate ordered holes on an electron-beam resist-coated Ge wafer. In the second process, an ion beam was used to irradiate the entire surface to promote nanostructure growth through the migration of ion beam-induced interstitial atoms. The formation of nanostructures with a 26 nm thickness, 59 nm height, and an aspect ratio of 2.2 was achieved in 60 nm diameter holes with equal center-center distances. High aspect ratio nanostructures were formed via limited migration of interstitial atoms on the walls. An estimated 1.1% point defect was obtained by changing the volume of the nanostructures after irradiation, which contributed to the growth of the structures.

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Void evolution and porosity under arsenic ion irradiation in GaAs_1−xSb_xalloys

Cited by 12 publications

References 46 publications

Recent advances in III-Sb nanowires: from synthesis to applications

Recent advances in III-Sb nanowires: from synthesis to applications

Clustered vacancies in ZnO: chemical aspects and consequences on physical properties

Fabrication of ordered nanostructures on the Ge surface using electron-beam lithography and ion beam irradiation

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