improve device stability over long operation period or in different operating conditions. In order to compensate for the resonant frequency shift, active tuning methods are usually preferred over the passive tuning techniques which offer a fully controllable way with environmental adaptability. Typical active tuning methods, including electrostatic tuning, electro/photothermal tuning, and stress tuning, are usually limited by the complexity of the system [9][10][11] or low tuning ranges around 0.8-15%. [12][13][14][15][16] With a fully integrated device, electrothermal tuning based on phase change material offers a simplified approach for obtaining larger frequency tuning ranges as high as ≈40%. [17,18] Vanadium dioxide (VO 2 ) undergoes a fully reversible hysteretic first order solidto-solid phase transition in which the crystallographic structure changes from monoclinic (M) phase to rutile (R) phase. This phase transition, also known as insulatorto-metal transition (IMT), starts at ≈68 °C [19] and typically spans between 5 and15 °C, depending on the microstructural properties of the film and its composition. The phase transition has been demonstrated to be induced in multiple ways including heat conduction, [20] external electric field, [21] optical radiation, [22] etc. More recently, VO 2 -based system-on-chip micrometer-sized devices have been developed, including electronic switches, [23,24] smart windows and optical modulators, [25,26] MEMS mirrors, [27,28] and RF resonators. [29,30] Correlated with the IMT, a structural phase transition (SPT) is also observed at the same time due to the crystal structural rearrangement. The change in average spacing of vanadium ions from M-phase to R-phase [31] induces a large strain energy density, which enables large deflection [27,32,33] and fast responsivity [34] in VO 2 -based bimorph MEMS actuators.The consequences of the SPT in VO 2 can also be implemented into active, fully reversible resonant frequency tuning techniques, which could be used to compensate frequency shifts due to performance degradation or random structural variations. Depending on the resonator structure, the resonant frequency shift can be induced by geometric distortion or residual axial stress. [35] The inherent hysteretic behavior also enables the programmability within multiple memory states. [36][37][38] All these efforts are focused on demonstrating larger frequency reconfigurability using simpler structures or methods, but little attention has been paid to the influence of these stress levels whenInterface stress between structural materials and thin film coatings has a significant influence on the resonant frequency of microelectromechanical system (MEMS) resonators. In this work, the axial stress on different types of buckled bridge MEMS resonator structures is controlled through the solid-to-solid phase transition of a VO 2 thin film coating. The devices have identical dimensions, but different buckling orientations and profiles due to the combined effect of overetching and residual ther...