Visible to Near‐Infrared Photodetection Based on Ternary Organic Heterojunctions

Li, Wei; Xu, Yalun; Meng, Xianghe; Xiao, Zuo; Li, Ruiming; Jiang, Li; Cui, Lihao; Zheng, Meijuan; Liu, Chang; Ding, Liming; Lin, Qianqian

doi:10.1002/adfm.201808948

Cited by 105 publications

(118 citation statements)

References 35 publications

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“…As aforementioned, Ding and coworkers exploited a novel NIR NFA, CO i 8DFIC, and successfully applied it to a ternary OPV with remarkable photoelectric conversion efficiency. In 2018, they introduced this promising ternary organic heterojunction into NIR OPDs with an inverted structure containing one donor (PTB7‐Th) and two acceptors (A1:CO i 8DFIC and A2:PC 71 BM) . The device performances were optimized by interfacial engineering, thermal annealing, and the construction of a thick junction, yielding a D * over 2 × 10 11 Jones in the spectral range from 400 to 1000 nm, with a peak value of 1 × 10 12 Jones (as shown in Figure ).…”

Section: Nir Photoelectric Materials For Opdsmentioning

confidence: 99%

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Near‐infrared organic photoelectric materials for light‐harvesting systems: Organic photovoltaics and organic photodiodes

Xie

Chen

Ying

et al. 2019

InfoMat

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The inherent advantages of organic optoelectronic materials endow lightharvesting systems, including organic photovoltaics (OPVs) and organic photodiodes (OPDs), with multiple advantages, such as low-cost manufacturing, light weight, flexibility, and applicability to large-area fabrication, make them promising competitors with their inorganic counterparts. Among them, nearinfrared (NIR) organic optoelectronic materials occupy a special position and have become the subject of extensive research in both academia and industry.The introduction of NIR materials into OPVs extends the absorption spectrum range, thereby enhancing the photon-harvesting ability of the devices, due to which they have been widely used for the construction of semitransparent solar cells with single-junction or tandem architectures. NIR photodiodes have tremendous potential in industrial, military, and scientific applications, such as remote control of smart electronic devices, chemical/biological sensing, environmental monitoring, optical communication, and so forth. These practical and potential applications have stimulated the development of NIR photoelectric materials, which in turn has given impetus to innovation in light-harvesting systems. In this review, we summarize the common molecular design strategies of NIR photoelectric materials and enumerate their applications in OPVs and OPDs. K E Y W O R D Snear infrared, organic optoelectronic materials, organic photodiodes, organic photovoltaics

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Section: Nir Photoelectric Materials For Opdsmentioning

confidence: 99%

Section: Nir Photoelectric Materials For Opdsmentioning

confidence: 99%

Near‐infrared organic photoelectric materials for light‐harvesting systems: Organic photovoltaics and organic photodiodes

Xie

Chen

Ying

et al. 2019

InfoMat

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“…(PTB7-Th):PC 71 BM blends. [74] An inverted device was fabricated under illumination, and c) EQE spectra of the devices with varied PTB7 contents in active layer, the inset displays the energy level diagram of the used materials. Reproduced with permission.…”

Section: Ternary Strategy Based Broadband Pd-opdsmentioning

confidence: 99%

Recent Progress on Broadband Organic Photodetectors and their Applications

Zhao

Niu

et al. 2020

Laser & Photonics Reviews

203

158

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As a promising candidate for next-generation photodetectors, organic photodetectors (OPDs) outperform the commercial inorganic photodetectors in terms of solution and large-area processability, mechanical flexibility, tunable spectral response range, low-cost manufacturing, and light weight. The OPDs with broadband spectral response attract an extensive attention due to their potential in wide application fields, such as flexible image sensing, surveillance, and health monitoring. In this review, recent advances in broadband OPDs are summarized as two sections: i) Photodiode type OPDs (PD-OPDs) based on thick-film strategy, ternary strategy, interfacial engineering, and multilayered strategy. ii) Photomultiplication type OPDs (PM-OPDs) with traps in active layer, traps in interfacial layer, and charge blocking layer. Some real applications on image sensors and photoplethysmography (PPG) sensors are also introduced on the basis of broadband OPDs. New insights on developing the broadband OPDs are put forward for improvement of broadband OPDs.

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“…Organic photoresponsive semiconductors have drawn tremendous attentions as an exciting candidate for photodetectors (de Arquer et al, 2017;Park et al, 2018;Li et al, 2019;Huang et al, 2020), artificial synaptic devices (Park and Lee, 2017;Dai et al, 2019;Deng et al, 2019;Yu et al, 2019;Shi et al, 2020), and particularly nonvolatile memory (Leydecker et al, 2016;Cheng et al, 2018;Liu et al, 2019;Yu et al, 2019), owing to their facile structure modification, excellent optoelectronic properties, large scale fabrication, low temperature processing, and mechanical flexibility. However, the number of semiconductors with good intrinsic optical memory behavior is small, and systematic studies on the photoresponsive semiconductors are desired.…”

Section: Introductionmentioning

confidence: 99%

An A-π-D-π-A-Type Organic Semiconductor Based Optoelectrical Device With Photo Response and Optical Memory Behaviors

et al. 2020

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A novel photoactive semiconductor (named as IDTOT-4F) with an A-π-D-π-A-type configuration is synthesized. It contains an electron-donating fused ring (D) as the core flanked with two π-spacers and is end-capped with two electron-withdrawing units (A). The intramolecular charge transfer effect endows IDTOT-4F with strong and broad light absorption and a relatively narrow band gap (1.46 eV). Thin-film optoelectrical devices based on IDTOT-4F exhibit both n-type and p-type switching behaviors. Besides, the p-channel device shows significantly photoresponsive performance with the maximum P (photo/dark current ratio), R (photoresponsivity), and D* (detectivity) values of around 60, 0.07 A W −1 , and 2.5 × 10 10 Jones, respectively. Further, IDTOT-4F based optoelectrical devices exhibit good optical memory characteristics with a time constant τ 1 of 4.6 h, indicating its applicability to nonvolatile optical memory devices. The results provide new insights into the photoresponsive behavior of fused-ring semiconductors and pave the way for the design of nonvolatile optical memory devices.

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Visible to Near‐Infrared Photodetection Based on Ternary Organic Heterojunctions

Cited by 105 publications

References 35 publications

Near‐infrared organic photoelectric materials for light‐harvesting systems: Organic photovoltaics and organic photodiodes

Near‐infrared organic photoelectric materials for light‐harvesting systems: Organic photovoltaics and organic photodiodes

Recent Progress on Broadband Organic Photodetectors and their Applications

An A-π-D-π-A-Type Organic Semiconductor Based Optoelectrical Device With Photo Response and Optical Memory Behaviors

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