Visible luminescence from Si/SiO2 quantum wells and dots: confinement and localization of excitons

Kanemitsu, Yoshihiko; Fukunishi, Yunosuke; Iiboshi, M; Okamoto, Satoru; Kushida, Takashi

doi:10.1016/s1386-9477(99)00357-4

Cited by 18 publications

(15 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…4,7,10,12,46,47 Moreover, the presence of other oxygen-bond types is frequently reported in experimental samples, beside the single-bond type discussed here. Several works report the Si-O-Si bridge bond as the most stable configuration, and the Si=O double bond as the less energetically favoured.…”

Section: Oxidation and Strainmentioning

confidence: 57%

“…The strong fluctuations of the electronic gap with the nanocrystal size could be responsible for the large broadening of the PL spectra that have been observed experimentally, also at low temperatures. 3,5,6,8,9,12,[43][44][45][46][47][48][49] …”

Section: Discussionmentioning

confidence: 99%

“…These considerations suggest a final picture in which the gap of small embedded NCs show an oscillating behaviour with size, and not strictly following the QC, as already observed in other works. 34,38 The large broadening of the PL spectra, observed also at low temperatures, 3,5,6,8,9,12,[43][44][45][46][47][48] even for apparently monodispersed multilayered samples, 49 could be a possible consequence of such fluctuations of the electronic gap with the NC size.…”

Section: Oxidation and Strainmentioning

confidence: 99%

See 2 more Smart Citations

Size, oxidation, and strain in smallSi/SiO2nanocrystals

2009

View full text Add to dashboard Cite

The structural, electronic and optical properties of Si nanocrystals of different size and shape, passivated with hydrogens, OH groups, or embedded in a SiO2 matrix are studied. The comparison between the embedded and free, suspended nanocrystals shows that the silica matrix produces a strain on the embedded NCs, that contributes to determine the band gap value. By including the strain on the hydroxided nanocrystals we are able to reproduce the electronic and optical properties of the full Si/SiO2 systems. Moreover we found that, while the quantum confinement dominates in the hydrogenated nanocrystals of all sizes, the behaviour of hydroxided and embedded nanocrystals strongly depends on the interface oxidation degree, in particular for diameters below 2 nm. Here, the proportion of NC atoms at the Si/SiO2 interface becomes relevant, producing surface-related states that may affect the quantum confinement appearing as inner band gap states and then drastically changing the optical response of the system.

show abstract

Section: Oxidation and Strainmentioning

confidence: 57%

Section: Discussionmentioning

confidence: 99%

Section: Oxidation and Strainmentioning

confidence: 99%

See 1 more Smart Citation

Size, oxidation, and strain in smallSi/SiO2nanocrystals

2009

View full text Add to dashboard Cite

show abstract

“…The origin of the luminescence in Si NCs is debatable, and many different mechanisms have been invoked to explain the visible PL from porous Si and Si NCs [105][106][107]. Most of the PL can be explained by quantum-confinement mechanism [28], Si/SiO 2 multilayer quantum wells [96].…”

Section: Xeol Of Si Nanocrystalsmentioning

confidence: 99%

Optical Properties of Nanostructured Silicon

Chao

2011

Comprehensive Nanoscience and Technology

View full text Add to dashboard Cite

“…The 2.1 eV PL band is attributed to radiative transitions based on the oxygen vacancy defect (E 0 centers) [24] or on the NBOHCs [16]. The quantum confinement of carriers in two phase systems has also been used to explain the luminescence mechanism of the 2.1 eV PL band [25][26][27][28]. The 2.7-2.9 eV PL band was proposed to result from triplet-singlet transition in an oxygen vacancy [29].…”

Section: Introductionmentioning

confidence: 99%