Visible Luminescence from Controlled Multi-Layer Stack Comprising of Thin Amorphous Silicon and Silicon Nitride Layers

Growth and characterization of amorphous Si based multilayer structures

“…This will result in tunable optical properties and emission characteristics for multilayer structures [75,76,78,191,278]. Moreover, with respect to their utilization in electroluminescence devices, multilayer structures allow electron-hole pairs to be injected efficiently through the very thin barrier layers, which is a big advantage over other low dimensional Si systems [76,77,86].…”

“…nm [76,77,86]. The PL exhibited a thickness dependent peak energy that was explained by quantum confinement effect.…”

“…Their a-Si/SiN x multilayers, on the other hand, revealed no contamination [191]. Another important advantage of utilizing Si nitride as the barrier layer for a-Si based multilayers is the lower electron/hole injection barrier between a-Si/a-Si 3 N 4 , compared to a-Si/SiO 2 [77][78][79] which is particularly important for EL applications. In 2007 Tan et al…”

“…Another promising solution, which also benefits from the quantum confinement of carriers, is to utilize Si-based multilayer structures [75][76][77][78][79][80][81][82]. Such structures typically comprise a lower bandgap amorphous Si alloy well layers sandwiched by a large bandgap amorphous Si alloy barrier layers.…”

“…This is extremely important towards their application as electroluminescent devices. Therefore, the controllability, uniformity and reproducibility of multilayer structures, has rendered them one of the leading competitors in the field of low dimensional Si based light emitters [41,[75][76][77][78][83][84][85][86][87].…”