2020
DOI: 10.1016/j.cplett.2020.137665
|View full text |Cite
|
Sign up to set email alerts
|

Visible light photocatalytic properties of cubic and orthorhombic SnS nanoparticles

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
14
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 63 publications
(17 citation statements)
references
References 27 publications
0
14
0
Order By: Relevance
“…The XRD patterns of the particles synthesized with Sn precursor concentrations of 0.04–0.20 M show intense diffraction at 2θ angles of 26.6° and 30.8°, in addition to weak diffractions at 18.6°, 23.0°, 31.7°, 32.7°, 35.6°, 39.5°, 44.1°, 44.9°, 50.3°, and 52.2° related to the (222) and (400) planes, and (211), (300), (410), (411), (421), (510), (440), (441), (540), and (622) planes, respectively. All the observed planes correspond to the cubic structure of SnS (π-SnS) with the P2 1 3 space group [ 21 , 22 ]. However, the π-SnS nanoparticles synthesized with low Sn precursor concentrations of 0.04 M and 0.08 M showed additional diffraction peaks related to Sn 2 S 3 phase.…”
Section: Resultsmentioning
confidence: 99%
“…The XRD patterns of the particles synthesized with Sn precursor concentrations of 0.04–0.20 M show intense diffraction at 2θ angles of 26.6° and 30.8°, in addition to weak diffractions at 18.6°, 23.0°, 31.7°, 32.7°, 35.6°, 39.5°, 44.1°, 44.9°, 50.3°, and 52.2° related to the (222) and (400) planes, and (211), (300), (410), (411), (421), (510), (440), (441), (540), and (622) planes, respectively. All the observed planes correspond to the cubic structure of SnS (π-SnS) with the P2 1 3 space group [ 21 , 22 ]. However, the π-SnS nanoparticles synthesized with low Sn precursor concentrations of 0.04 M and 0.08 M showed additional diffraction peaks related to Sn 2 S 3 phase.…”
Section: Resultsmentioning
confidence: 99%
“…Upon increasing the content of Se, the thicknesses of SnS x Se 1−x thin films are increased, as shown in Figure S1. The surface and cross-sectional morphologies of SnS 0.5 Se 0.5 /Ag thin films were also characterized, as shown in Figure 3e(1)−h(1),e(2)−h (2). The surface morphologies of SnS 0.5 Se 0.5 /Ag thin films are similar.…”
Section: Preparation Of Snsmentioning
confidence: 76%
“…Two-dimensional layered IV–VI group semiconductor materials have attracted great attention due to their excellent photoelectric properties . Among them, SnS has an optical band gap of about 1.0–1.5 eV and a high absorption coefficient (>10 4 cm –1 ). , It is cheap, non-toxic, rich on earth, and considered as a potential solar energy material. SnSe also has good optical properties and its band gap is about 0.9–1.3 eV. Its atoms are arranged in two adjacent double layers of tin and selenium through weak van der Waals interactions.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…The tin sulfides which consist of abundant and environmentally friendly elements have recently attracted great interest in view of the promising applications in photovoltaic absorber [1,2], photodetector [3,4], the electrode materials of lithium-ion batteries [5,6], photocatalysis [7,8], etc.…”
Section: Introductionmentioning
confidence: 99%