2018
DOI: 10.1021/acscatal.8b01210
|View full text |Cite
|
Sign up to set email alerts
|

Visible-Light Photocatalysis with Mullite-Type Bi2(Al1–xFex)4O9: Striking the Balance between Bandgap Narrowing and Conduction Band Lowering

Abstract: The rich crystal chemistry of mullite-type Bi 2 M 4 O 9 (M = Fe, Al, Ga) offers multiple potential applications. In particular, the strong absorption of visible light shown by Bi 2 Fe 4 O 9 has led to an influx of research on its photocatalytic properties. However, most of the published studies involve the decolorization of dyes and take it as proof of its photocatalytic activity; furthermore, there are no reports on its conduction and valence band edges, and, thus, the actual redox characteristics of the phot… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
15
0

Year Published

2018
2018
2023
2023

Publication Types

Select...
8
1

Relationship

2
7

Authors

Journals

citations
Cited by 22 publications
(17 citation statements)
references
References 81 publications
(151 reference statements)
0
15
0
Order By: Relevance
“…BQ, EDTA 2Na and IP are used to scavenge cO 2 À , h+ and cOH species, respectively. [39][40][41] The addition of IP scavenges cOH and has little effect on the TC-HCl degradation. (Fig.…”
Section: Photocatalytic Performance Of Cef 3 -O Under Visible/ Near-imentioning
confidence: 99%
“…BQ, EDTA 2Na and IP are used to scavenge cO 2 À , h+ and cOH species, respectively. [39][40][41] The addition of IP scavenges cOH and has little effect on the TC-HCl degradation. (Fig.…”
Section: Photocatalytic Performance Of Cef 3 -O Under Visible/ Near-imentioning
confidence: 99%
“…The E fb for C-TiO 2 NC was determined by extrapolating the tangent of the 1/C 2 vs V plot to the x -axis; the slope of this plot provides the carrier-charge density ( N d ). The Mott–Schottky plot for C-TiO 2 NC exhibits a positive slope that is characteristic of an n-type semiconductor . The charge density for C-TiO 2 NC is found to be 0.15 × 10 18 cm –3 .…”
Section: Resultsmentioning
confidence: 91%
“…The Mott− Schottky plot for C-TiO 2 NC exhibits a positive slope that is characteristic of an n-type semiconductor. 58 The charge density for C-TiO 2 NC is found to be 0.15 × 10 18 cm −3 . As defect sites always contribute to charge density, the high charge density suggests the presence of a high number of defect sites in C-TiO 2 NC.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…No references were found on modeling of the PIP process for CMCs, though experimental studies on this manufacturing process have been reported. Studies on polycarbosilanederived SiC ceramic 25 and SiC/SiC composite 26,27 have shown that porosity decreases and mechanical properties improve with the increasing number of PIP cycles. Zhu et al 28 show that increasing pyrolysis temperature and the concentration of SiC fillers in polycarbosilane polymer result in improved mechanical properties in two-dimensional Carbon/ SiC (C/SiC) composites fabricated using the PIP process.…”
Section: Introductionmentioning
confidence: 99%