Visible electroluminescence from silicon nanoclusters embedded in chlorinated silicon nitride thin films

Alonso, Juan Carlos; Pulgarín, F.A.; Monroy, B.M.; Benami, Abdellah; Bizarro, Monserrat; Ortíz, A.

doi:10.1016/j.tsf.2009.11.060

Cited by 13 publications

(13 citation statements)

References 29 publications

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“…Methods to enhance the efficiency and to increase the visible components in the Si emission spectrum include the introduction of porous Si and quantum dots which have raised the IQE of Si-based light emitters to 1%. Since the report of high-efficiency visible PL from Si quantum dots in 2000 [ 78 , 79 ], the EL properties of Si QDs have been extensively investigated in an attempt to produce an all-silicon laser diode, as shown in Figure 11 [ 80 - 82 ]. Kim et al [ 42 ] have developed a LED structure with a Ag layer containing Ag NPs between the silicon nitride layer containing the Si QDs and Si substrate.…”

Section: Applicationsmentioning

confidence: 99%

Light-emitting diodes enhanced by localized surface plasmon resonance

et al. 2011

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Light-emitting diodes [LEDs] are of particular interest recently as their performance is approaching fluorescent/incandescent tubes. Moreover, their energy-saving property is attracting many researchers because of the huge energy crisis we are facing. Among all methods intending to enhance the efficiency and intensity of a conventional LED, localized surface plasmon resonance is a promising way. The mechanism is based on the energy coupling effect between the emitted photons from the semiconductor and metallic nanoparticles fabricated by nanotechnology. In this review, we describe the mechanism of this coupling effect and summarize the common fabrication techniques. The prospect, including the potential to replace fluorescent/incandescent lighting devices as well as applications to flat panel displays and optoelectronics, and future challenges with regard to the design of metallic nanostructures and fabrication techniques are discussed.

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Section: Applicationsmentioning

confidence: 99%

Light-emitting diodes enhanced by localized surface plasmon resonance

et al. 2011

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“…Motivated by these studies and considering the fact that the use of halogen-containing gases has become attractive for the preparation of silicon nanocrystals with stable luminescent and electronic properties, ,, in a previous work we reported the HOMO–LUMO gap of Si-nc, when the surface was completely passivated with chlorine and nitrogen. We found that the gaps for Si 35 Cl 36 (3.3 eV) and Si 35 (NH 2 ) 36 (3.2 eV) were significantly smaller than the gap for Si 35 H 36 (5.1 eV) .…”

Section: Introductionmentioning

confidence: 99%

Theoretical Study of the Electronic Properties of Silicon Nanocrystals Partially Passivated with Cl and F

et al. 2012

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Density functional theory calculations and theoretical representations of the density of states (DOS) were undertaken in order to understand the electronic properties of silicon nanocrystals (Si-nc), when partially passivated with Cl and F. Effects relating to cluster size (Si29, Si35, and Si87), type, and percentages of halogen surface passivant, concerning both the cluster gap and electron-donor–acceptor capabilities, were analyzed. These calculations indicate that as the percentage of Cl and F substitution increases, the energy of the LUMO decreases, and consequently, the HOMO–LUMO gap decreases. Correspondingly, we found that the high-electronegativity substituent Cl and F atoms produce the appearance of shoulders in the DOS band edges, thus reducing the band gap. These results explain the photoluminescent experimental data reported for Si-nc. The evaluation of the electrodonating and electroaccepting powers of Si-nc partially passivated with Cl and F indicates that Si-nc have potential applications for bulk heterojunction solar cells and electroluminescent devices.

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“…Since the first reports of luminescence and electroluminescence, originated by quantum size effects, from highly confined silicon materials (superlattices, quantum dots, and quantum wires) [ 1 , 2 , 3 ], there has been a growing interest in the development of monolithic silicon photonics as the optical analogue of silicon microelectronics [ 4 , 5 , 6 , 7 ]. In order to meet this goal, arduous work has been done over the years to fabricate light emitters and electroluminescent devices based mainly on crystalline and amorphous silicon quantum dots (SiQDs) embedded in silicon nitride and silicon dioxide films, and to tune the photoluminescence by controlling the size and the surface passivation of the SiQDs [ 8 , 9 , 10 , 11 , 12 , 13 ]. However, the silicon photonics have evolved slowly, mainly because the illumination efficiency from confined silicon is still very low compared with that of the direct-band gap III–V semiconductors [ 7 ].…”

Section: Introductionmentioning

confidence: 99%

Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices

2018

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Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs) embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs) to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD) in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC)-sputtering technique, and an aluminum doped zinc oxide thin film (AZO) which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL) enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL) enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer.

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Visible electroluminescence from silicon nanoclusters embedded in chlorinated silicon nitride thin films

Cited by 13 publications

References 29 publications

Light-emitting diodes enhanced by localized surface plasmon resonance

Light-emitting diodes enhanced by localized surface plasmon resonance

Theoretical Study of the Electronic Properties of Silicon Nanocrystals Partially Passivated with Cl and F

Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices

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