Visible-blind GaN Schottky barrier detectors grown on Si(111)

Abstract

We report novel GaN detectors grown by molecular beam epitaxy on Si(111) substrates. Wurtzite structure epitaxial GaN exhibits room-temperature photoluminescence with a band-edge-related emission width as narrow as 7 nm and intensities comparable to high quality layers grown on sapphire by metalorganic chemical vapor deposition. Spectral response of lateral geometry Schottky detectors shows a sharp cutoff at 365 nm with peak responsivities of ∼0.05 A/W at 0 V, and ∼0.1 A/W with a −4 V bias. The dark current is ∼60 nA at −2 V bias. The noise equivalent power is estimated to be 3.7×10−9 W over the response bandwidth of 2.2 MHz.

Room-temperature ultraviolet luminescence from γ-CuCl grown on near lattice-matched silicon

“…One favored substrate has been Si ͑111͒, as this surface has a 120°symmetry which is somewhat compatible with the hexagonal III nitrides, and Si possesses obvious advantages for compatibility with integrated devices and circuits, has good thermal conductivity, and would be a low cost alternative. [16][17][18] This route is proving difficult, as the difference in lattice parameters and the strength of the Si-N bond prevent the formation of smooth, single-crystal GaN on Si ͑111͒. 18,19 To some extent this has been alleviated by using a two-step method involving various buffer layers such as SiC, 20,21 AlN, 22,23 GaAs, 24 AlAs, 25 and SiN x .…”

Fianite in Photonics

“…As it has been shown by calculations, fianite should not react with silicon substrate to form SiO 2 , which has low dielectric constant value, at a direct contact [51]. However, in practice, it is very difficult to avoid formation of this layer at the fianite deposition or subsequent high-thermal treatment [52,53].…”

“…That requires a change of SiO 2 over dielectrics with higher dielectric constant (high-k materials) [33][34][35]51]. The resent studies have limited possible alternatives to fianite, HfO 2 , ZrO 2 and its silicates.…”

Enhanced Blue-Light Emission from InGaN/GaN Quantum Wells Grown over Multilayered Buffer on Silicon Substrate by Metal Organic Chemical Vapor Deposition

“…However, due to the even larger differences in lattice constant and thermal expansion coefficients between the III-nitrides and silicon as compared with sapphire, it is really difficult to grow high quality epitaxial layers of GaN-based nitrides on a silicon substrate. A lot of attempts have been made to grow III-nitrides on silicon substrates in the past decade using various kinds of materials as intermediate layer, such as AlN [1,2], carbonized silicon [3], nitridized GaAs [4], oxidized AlAs [5], and g-Al 2 O 3 [6]. In particular, by using a thin AlN film as intermediate layer, ultraviolet and violet-light emitting diodes of III-nitride have been fabricated on silicon substrate by molecular beam epitaxy (MBE) [1].…”