Virtual metrology and feedback control for semiconductor manufacturing processes using recursive partial least squares

Khan, Aftab Aslam Parwaz; Moyne, James; Tilbury, Dawn M.

doi:10.1016/j.jprocont.2008.04.014

Cited by 129 publications

(63 citation statements)

References 24 publications

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“…Firstly, the VM models for electron density and etch rate may become invalid due to process drift over long durations [33]. When real metrology from drifting processes is available, the VM model will require refreshing to maintain model currency (as proposed in [7,34]). Secondly, separate VM models may be required for different tools in the fabrication environment due to mismatch between tool and sensor characteristics.…”

Section: Resultsmentioning

confidence: 99%

“…1. Fab-wide VM schemes that are capable of increasing factory throughput, reducing wafer scraps, cutting production costs, and paving the way to fully automated wafer-2-wafer (W2W) control have been investigated [7,6,8].…”

Section: Introductionmentioning

confidence: 99%

“…APC includes lot-to-lot, wafer-to-wafer, and within-wafer real-time control and can improve performance, yield, and throughput [10]. Thus far, APC implementation in the semiconductor industry has broadly been restricted to lot-to-lot control [7] because of infrequent measurements and large metrology delays. VM is a potential solution to overcome these difficulties.…”

Section: Introductionmentioning

confidence: 99%

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Real-time virtual metrology and control for plasma etch

Lynn¹,

MacGearailt

Ringwood³

2012

Journal of Process Control

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a b s t r a c tPlasma etch is a semiconductor manufacturing process during which material is removed from the surface of semiconducting wafers, typically made of silicon, using gases in plasma form. A host of chemical and electrical complexities make the etch process notoriously difficult to model and troublesome to control. This work demonstrates the use of a real-time model predictive control scheme to control plasma electron density and plasma etch rate in the presence of disturbances to the ground path of the chamber. Virtual metrology (VM) models, using plasma impedance measurements, are used to estimate the plasma electron density and plasma etch rate in real time for control, eliminating the requirement for invasive measurements. The virtual metrology and control schemes exhibit fast set-point tracking and disturbance rejection capabilities. Etch rate can be controlled to within 1% of the desired value. Such control represents a significant improvement over open-loop operation of etch tools, where variances in etch rate of up to 5% can be observed during production processes due to disturbances in tool state and material properties.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Real-time virtual metrology and control for plasma etch

Lynn¹,

MacGearailt

Ringwood³

2012

Journal of Process Control

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“…Varios autores coinciden en que las técnicas de medición ópticas presentan un menor costo y un aumento en la calidad del producto frente a las técnicas de microscopía, las cuales son costosas, consumen mucho tiempo y no permiten la automatización del proceso [25][26][27]. Otras de las ventajas de las técnicas mencionadas consisten en la optimización de los recursos del proceso, lo que permite desplegar acciones de mantenimiento predictivo basado en mediciones en tiempo real, y con esto detectar variaciones en un proceso particular de manera oportuna [19].…”

Section: Herramientas Para El Aseguramiento Metrológicounclassified

Nanometrología: Impacto en los sistemas de producción

Gómez

Jaramillo

2016

Cien.Ing.Neogranadina

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<p>El presente trabajo es el resultado de una revisión bibliográfica sobre: la aplicación de la nanometrología en diferentes sectores industriales y cómo esta contribuye a alcanzar los estándares de calidad de los productos a través de la medición de parámetros críticos en los procesos productivos; así como una descripción de los retos a los que se enfrenta esta ciencia en diferentes sectores. Se reportan los avances y el desarrollo de nuevas técnicas que permiten medir las características de los nanodispositivos, nanomateriales y equipos, lo que ha permitido potenciar el desarrollo de industrias, una disminución de los costos y la automatización de los procesos. Dentro del texto se hace referencia a industrias en progreso y el efecto que tiene el control de parámetros para la optimización de los procesos, el diseño de nanodispositivos y la creciente necesidad de la reglamentación en el uso de nanocompuestos, el diseño de técnica confiables y de protocolos para el uso de nanopartículas. El adelanto de la nanometrología ha contribuido al desarrollo de materiales de referencia, herramientas que aumenten la exactitud y precisión de las medidas, así como técnicas para la calibración de las herramientas y equipos apropiados para las medidas a nanoescala, lo que se traduce en un proceso productivo controlado que garantiza la calidad de los productos. Finalmente, se incluye el estado de la nanometrología en Colombia, enfocada en procesos industriales, como: el sector de alimentos, textil, salud y producción de nanomateriales, así como el trabajo desarrollado por grupos de investigación.</p>

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“…Moreover, metrology data are also delay for feedback control because of wafer shipment, and measurement 5 . In order to measure in-situ process output for ensuring the quality, VM is a prediction of metrology variables based on the state of the equipment [4][5][6] . First, VM is used to predict the process quality without actually inspection [10][11][12] in order to enhance the whole product inspection as possible.…”

Section: Literature Reviewmentioning

confidence: 99%

A virtual metrology approach for maintenance compensation to improve yield in semiconductor manufacturing

Lin¹,

Hsu²,

Yu³

2014

IJCIS

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Process condition was changed by preventative maintenance that may lead to the inconsistency of process output. In practice, process engineers have difficulties to discover the inconsistency that the defect wafer may have been produced before the next measurement. This study proposes a virtual metrology (VM) approach for maintenance compensation in semiconductor manufacturing. The tool process parameter streams were collected to predict the product metrology value, and a relation model was built to adjust the equipment settings for product recipe compensation. An empirical study in maintenance compensation of chemical vapor deposition (CVD) was conducted in a Taiwan semiconductor company for validation. The thickness difference caused by maintenance was reduced from 571Å to 77Å in training data and 564Å to 210Å in testing data. The results showed practical viability of the proposed approach and an intelligent system embedded with the developed algorithm has been implemented.

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Virtual metrology and feedback control for semiconductor manufacturing processes using recursive partial least squares

Cited by 129 publications

References 24 publications

Real-time virtual metrology and control for plasma etch

Real-time virtual metrology and control for plasma etch

Nanometrología: Impacto en los sistemas de producción

A virtual metrology approach for maintenance compensation to improve yield in semiconductor manufacturing

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