Violet and UV light-emitting diodes grown on ZrB2 substrate

Kamiyama, Satoshi; Takanami, S.; Tomida, Y.; Iida, K.; Kawashima, T.; Fukui, S.; Iwaya, Motoaki; Kinoshita, Hiroyuki; Matsuda, Toshio; Yasuda, Toshiki; Otani, Shigeki; Amano, Hiroshi; Akasaki, Isamu

doi:10.1002/pssa.200303317

Cited by 16 publications

(11 citation statements)

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“…12 In addition, non-GaN substrates with lattice structures and sizes that more closely match those of GaN than sapphire or SiC are being explored. For example, LiGaO 2 [54], ZrB 2 [35], ZnO [43], and (Mn,Zn)Fe 2 O 4 (111) [71] have lattice constants that span a wide range of InGaN alloy compositions, though epitaxial growth of InGaN on many of these substrates has proven challenging [71].…”

Section: Extended Defectsmentioning

confidence: 99%

Research challenges to ultra‐efficient inorganic solid‐state lighting

Phillips¹,

Coltrin

Crawford

et al. 2007

Laser & Photonics Reviews

375

268

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Solid-state lighting is a rapidly evolving, emerging technology whose efficiency of conversion of electricity to visible white light is likely to approach 50% within the next several years. This efficiency is significantly higher than that of traditional lighting technologies, giving solid-state lighting the potential to enable significant reduction in the rate of world energy consumption. Further, there is no fundamental physical reason why efficiencies well beyond 50% could not be achieved, which could enable even more significant reduction in world energy usage. In this article, we discuss in some detail: (a) the several approaches to inorganic solid-state lighting that could conceivably achieve "ultra-high," 70% or greater, efficiency, and (b) the significant research questions and challenges that would need to be addressed if one or more of these approaches were to be realized.

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Section: Extended Defectsmentioning

confidence: 99%

Research challenges to ultra‐efficient inorganic solid‐state lighting

Phillips¹,

Coltrin

Crawford

et al. 2007

Laser & Photonics Reviews

375

268

View full text Add to dashboard Cite

show abstract

“…The nitride-based light-emitting diode grown on the (3038) 4H-SiC substrate was fabricated, where three of GaInN QWs were used as an active layer [3]. For comparison, we also made a LED with same structure on the c-face sapphire substrate.…”

Section: Led Grown On (3038) 4h-sic Substratementioning

confidence: 99%

GaN growth on (30&3macr;8) 4H‐SiC substrate for reduction of internal polarization

Kamiyama

Honshio

Kitano

et al. 2005

phys. stat. sol. (c)

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We have proposed a novel solution with a use of a ( ) 3038 4H-SiC substrate for the reduction of internal polarization in the GaInN QWs. With changing the pressure at the initial stage of the nitride growth, two crystallographic orientations of the nitride layers could be switched. When the growth pressure was as high as 1013 hPa, the c-axis of the GaN is 54.7° tilted from the surface plane. On the other hand, the GaN having 7° tilted c-axis was dominant with the growth pressure of 100 hPa, where there is a relationship of SiC ( ) 0001 // GaN ( ) 10 11 . We fabricated a LED on the ( ) 3038 4H-SiC substrate, where the c-axis orientation of 54.7° is tilted from the surface plane. The blue shift of the peak wavelength with increasing injection current was confirmed to be smaller than that of conventional LED grown along the c-axis on sapphire substrate. This small blue shift may be certain evidence that the GaInN active layer has small internal field as we expected.

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“…In addition, the highly reflective nature of the ZrB 2 buffer layer ensures no light is lost through the Si substrate, and its metallic nature enables its use as an ohmic contact in nitride devices such as light-emitting diodes (LEDs) by providing a vertical current path and simplifying the LED geometry. Recently, a vertical device setup using thermally and electrically conductive substrates were proposed to overcome the low saturation of the device [6,7].…”

Section: Introductionmentioning

confidence: 99%

The Effects of Annealing Temperature on the Structural Properties of ZrB2 Films Deposited via Pulsed DC Magnetron Sputtering

Chen

Lee

et al. 2019

Coatings

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Zirconium diboride (ZrB2) thin films were deposited on a Si(100) substrate using pulsed direct current (dc) magnetron sputtering and then annealed in high vacuum. In addition, we discussed the effects of the vacuum annealing temperature in the range of 750 to 870 °C with flowing N2 on the physical properties of ZrB2 films. The structural properties of ZrB2 films were investigated with X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The XRD patterns indicated that the ZrB2 films annealed at various temperatures exhibited a highly preferred orientation along the [0001] direction and that the residual stress could be relaxed by increasing the annealing temperature at 870 °C in a vacuum. The surface morphology was smooth, and the surface roughness slightly decreased with increasing annealing temperature. Cross-sectional TEM images of the ZrB2/Si(100) film annealed at 870 °C reveals the films were highly oriented in the direction of the c-axis of the Si substrate and the film structure was nearly stoichiometric in composition. The XPS results show the film surfaces slightly contain oxygen, which corresponds to the binding energy of Zr–O. Therefore, the obtained ZrB2 film seems to be quite suitable as a buffer layer for III-nitride growth.

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Violet and UV light-emitting diodes grown on ZrB2 substrate

Cited by 16 publications

References 0 publications

Research challenges to ultra‐efficient inorganic solid‐state lighting

Research challenges to ultra‐efficient inorganic solid‐state lighting

GaN growth on (30&3macr;8) 4H‐SiC substrate for reduction of internal polarization

The Effects of Annealing Temperature on the Structural Properties of ZrB2 Films Deposited via Pulsed DC Magnetron Sputtering

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