Vibrational properties and structure of undoped and Al-doped ZnO films deposited by RF magnetron sputtering

Tzolov, Marian; Tzenov, N.; Dimova‐Malinovska, D.; Kalitzova, M.; Pizzuto, C.; Vitali, G.; Zollo, Giuseppe; Ivanov, Ivan Gueorguiev

doi:10.1016/s0040-6090(00)01413-9

Cited by 230 publications

(131 citation statements)

References 38 publications

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“…The most consistent explanation of the behaviour of our Raman data is in terms of EFI enhancement (via charge trapping at grain boundaries) of the 570cm -1 feature [13]. This enhancement effect in conjunction with the presence of localised/surface phonon modes, which arise due to the small grain size, accounts for both the intensity and asymmetry of the peak in the unannealed sample [13].…”

Section: Discussionsupporting

confidence: 65%

“…The intensity and asymmetry of the LO mode at 570cm -1 has been widely discussed in the literature. Explanations for this structure include resonance enhancement due to impurity levels in the band gap [12], contributions from both the A 1 (LO) and E 1 (LO) modes due to random crystallite orientation [12] or a combination of electric field induced (EFI) Raman enhancement and one of the following mechanisms (i) coupled phonon-plasmon scattering or (ii) localised interface and/or surface phonon modes [13].…”

Section: Discussionmentioning

confidence: 99%

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Correlation of Raman and X-ray diffraction measurements of annealed pulsed laser deposited ZnO thin films

et al. 2003

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Raman spectroscopy, x-ray diffractometry and atomic force microscopy have been used to characterize ZnO thin films grown by pulsed laser deposition as a function of the postgrowth annealing temperature. The results show substantial enhancement and broadening of certain Raman features which correlate excellently with the change in width of the xray diffraction peaks. The 570cm -1 Raman feature showed pronounced asymmetry and enhanced intensity in the unannealed sample. An increase in grain size observed after subsequent annealing produced a substantial reduction in both the asymmetry and intensity of this peak. Our experimental data suggest that electric fields, due to charge trapping at grain boundaries, in conjunction with localised and surface phonon modes are the cause of the intensity enhancement and asymmetry of this feature.

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Section: Discussionsupporting

confidence: 65%

Section: Discussionmentioning

confidence: 99%

Correlation of Raman and X-ray diffraction measurements of annealed pulsed laser deposited ZnO thin films

et al. 2003

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“…Although, the defect-induced modes are generally forbidden, they appear in defective crystals because the Raman selection rule is relaxed. Several researchers have confirmed that this band is associated with oxygen vacancies or probably Zn interstitials 33,35,36 ͑Zn i ͒ because they observed its strong dependence on the oxygen stoichiometry. Therefore, we can use Raman measurements to study the oxygen vacancies produced by P + implantation.…”

Section: A Defect Characterizationsmentioning

confidence: 87%

Production and recovery of defects in phosphorus-implanted ZnO

Chen

Kawasuso

et al. 2004

Journal of Applied Physics

132

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Articles you may be interested inReuse of AIP Publishing content is subject to the terms at: https://publishing.aip.org/authors/rights-and-permissions. Phosphorus ions were implanted in ZnO single crystals with energies of 50-380 keV having total doses of 4.2ϫ 10 13 -4.2ϫ 10 15 cm −2 . Positron annihilation measurements reveal the introduction of vacancy clusters after implantation. These vacancy clusters grow to a larger size after annealing at a temperature of 600°C. Upon further annealing up to a temperature of 1100°C, the vacancy clusters gradually disappear. Raman-scattering measurements reveal the enhancement of the phonon mode at approximately 575 cm −1 after P + implantation, which is induced by the production of oxygen vacancies ͑V O ͒. These oxygen vacancies are annealed out up to a temperature of 700°C accompanying the agglomeration of vacancy clusters. The light emissions of ZnO are suppressed after implantation. This is due to the competing nonradiative recombination centers introduced by implantation. The recovery of the light emission occurs at temperatures above 600°C. The vacancy-type defects detected by positrons might be part of the nonradiative recombination centers. The Hall measurement indicates an n-type conductivity for the P + -implanted ZnO layer, suggesting that phosphorus is an amphoteric dopant.

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“…A clear observation shows that, the Raman spectra consist of four Raman active modes at 102, 377, 440 and 575 cm -1 ; Raman inactive B 2 mode at 276 cm -1 along with some other peaks at 193, 460 and 516 cm -1 . Based on the literature [26][27][28] , the observed Raman modes are assigned as follows. The modes at 102 and 440 cm -1 are doubly degenerate modes corresponding to the E 2 (Low) mode and E 2 (High) mode respectively.…”

Section: Scanning Electron Microscopy (Sem)mentioning

confidence: 99%

Effect of RF power on the structural, optical and gas sensing properties of RF-sputtered Al doped ZnO thin films

Srinatha

Kamble³

et al. 2016

RSC Adv.

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The effect of Radio Frequency (RF) power on the properties of magnetron sputtered Al doped ZnO thin films and the related sensor properties are investigated. A series of 2 wt% Al doped ZnO; Zn0.98Al0.02O (AZO) thin films prepared with magnetron sputtering at different RF powers, are examined. The structural results reveal a good adhesive nature of thin films with quartz substrates as well as increasing thickness of the films with raising RF power. Besides, the increasing RF power is found to improve the crystallinity and grains growth as confirmed by X-ray diffraction. On the other hand, the optical transmittance is significantly influenced by the RF power, where the transparency values achieved are higher than 82% for all the AZO thin films and the estimated optical band gap energy is found to decrease with RF power due to an increase in the crystallite size as well as the film thickness. In addition, the defect induced luminescence at low temperature (77 K) and room temperature (300 K) was studied through photoluminescence spectroscopy, it is found that the defect density of electronic states of Al 3+ ion found to increase with increase of RF power due to the increase in the thickness of the film and the crystallite size. The gas sensing behavior of AZO films was studied for NO2 at 350 °C. The AZO film shows good response towards NO2 gas and also a good relationship between the response and the NO2 concentration, which is modeled using an empirical formula. The sensing mechanism of NO2 is discussed.

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Vibrational properties and structure of undoped and Al-doped ZnO films deposited by RF magnetron sputtering

Cited by 230 publications

References 38 publications

Correlation of Raman and X-ray diffraction measurements of annealed pulsed laser deposited ZnO thin films

Correlation of Raman and X-ray diffraction measurements of annealed pulsed laser deposited ZnO thin films

Production and recovery of defects in phosphorus-implanted ZnO

Effect of RF power on the structural, optical and gas sensing properties of RF-sputtered Al doped ZnO thin films

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