Vibrational Lifetimes and Frequency-Gap Law of Hydrogen Bending Modes in Semiconductors

Sun, Baozhou; Shi, Gang; Rao, S. Venugopal; Stavola, Michael; Tolk, N. H.; Dixit, S.K.; Feldman, L. C.; Lüpke, G.

doi:10.1103/physrevlett.96.035501

Cited by 33 publications

(27 citation statements)

References 25 publications

(34 reference statements)

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“…Further experiments will be necessary to clarify this issue. Among them, the effect of a hydrogen substitution by deuterium on the dissociation yield should provide interesting information since isotope effects of unexpected magnitude are predicted 22 and observed 18 in the case of vibrational heating.…”

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confidence: 98%

Electron-beam-induced dissociation of B–D complexes in diamond

Barjon

Chevallier

Jomard

et al. 2006

Applied Physics Letters

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The diffusion of deuterium in boron-doped homoepitaxial diamond films leads to the passivation of boron acceptors via the formation of B–D complexes. In this letter, the stability of B–D pairs is investigated under the stress of a low-energy (10keV) electron-beam irradiation at low temperature (∼100K). The dissociation of the complexes is evidenced by cathodoluminescence spectroscopy and is shown to result in the reactivation of most acceptors. The dissociation yield per incident electron is found to be strongly dependent on the e-beam current, which suggests a dissociation involving a vibrational excitation of the complexes by hot electrons.

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confidence: 98%

Electron-beam-induced dissociation of B–D complexes in diamond

Barjon

Chevallier

Jomard

et al. 2006

Applied Physics Letters

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“…The measurements of the lifetimes of H-related wag modes [13] yield a more straightforward explanation. These lifetimes vary exponentially with the frequency separation between the LVM and the receiving modes (''frequency-gap law'').…”

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confidence: 99%

First-Principles Calculations of Vibrational Lifetimes and Decay Channels: Hydrogen-Related Modes in Si

West

Estreicher

2006

Phys. Rev. Lett.

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The vibrational lifetimes and decay channels of local vibrational modes are calculated from first principles at various temperatures. Our method can be used to predict the temperature dependence of the lifetime of any normal mode in any crystal. We focus here on the stretch modes of H2*, H+(BC), and VH x HV in Si. The frequencies are almost identical, but the lifetimes vary from 4 to 295 ps. The calculations correctly predict the lifetimes for T > 50 K and illustrate the critical importance of pseudolocal modes in the decay processes of high-frequency local vibrational modes.

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“…The decay becomes a much slower three-phonon process, the theoretical lifetime increases to τ = 23 ps , and the IR line becomes very narrow. For D ab − C s · · · D bc − Si, ∆ω = 310 cm −1 and the predicted 11 ps lifetime is about average for a typical two-phonon decay [19]. This is not an isolated situation.…”

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confidence: 99%

“…The number of phonons involved in the decay can be estimated from the lifetime via the empirical 'frequencygap law' [19]. Two-phonon decays correspond to τ 's of the order of 4 to 10 ps, three-phonon decays range from 30 to 90 ps, etc.…”

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confidence: 99%

Huge isotope effect on the vibrational lifetimes of an H2*(C) defect in Si

et al. 2013

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The hydrogenation of C-rich Si leads to the formation of two (almost) energetically degenerate H * 2 (C) complexes, each containing one substitutional C (Cs) and two interstitial H atoms which are located at a bond-centered (bc) and an anti-bonding (ab) site, respectively. The two defects are trigonal: Cs − H bc · · · Si − H ab and H ab − Cs · · · H bc − Si. Fourier-transform infrared (FTIR) absorption spectra of these two defects should show two Cs − H and two Si − H stretch modes, but the H ab − Cs mode was absent in earlier studies. The missing line has now been observed by FTIR in especially C-rich Si material. The line is unexpectedly broad, suggesting a very short vibrational lifetime. Partial D substitutions result in the formation of a H ab − Cs · · · D bc − Si center. In this defect, the H ab − Cs line shifts by only 0.3 cm −1 but becomes very sharp, suggesting a long lifetime. The IR line widths show that the vibrational lifetime of the H ab − Cs mode in H ab − Cs · · · D bc − Si is about 16 times longer than that of the same H ab − Cs mode in H ab − Cs · · · H bc − Si. This paper contains experimental data and first-principles calculations which explain this isotope effect.

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Vibrational Lifetimes and Frequency-Gap Law of Hydrogen Bending Modes in Semiconductors

Cited by 33 publications

References 25 publications

Electron-beam-induced dissociation of B–D complexes in diamond

Electron-beam-induced dissociation of B–D complexes in diamond

First-Principles Calculations of Vibrational Lifetimes and Decay Channels: Hydrogen-Related Modes in Si

Huge isotope effect on the vibrational lifetimes of an H2*(C) defect in Si

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