The
photocatalytic performance of semiconductor nanoparticles (NPs)
is sensitive to their electronic configuration, especially the surface
states, which call for effective analysis methods. The electronic
structures of CdS NPs have been investigated with traditional spectroscopic
methods: ultraviolet–visible diffuse reflectance spectroscopy
(UV–vis DRS) and fluorescence excitation emission matrix (EMM)
spectroscopy and nonlinear methods: two-photon luminescence (TPL)
and broadband sum frequency generation (BB-SFG) spectroscopy. The
satisfactory band gap of hexagonal CdS NPs is identified through nonlinear
spectroscopy. The band gap value is specified as 2.38 eV with SFG-induced
photoluminescence. Two surface states (2.18–2.43 and 1.97–2.12
eV) have been observed with wavelength-dependent BB-SFG (not shown
in UV–vis DRS) and may be attributed to shallow-trapped states
from S2– vacancy defects. BB-SFG spectroscopy can
be a very useful complementary technique to traditional methods to
access the “dark states” for the electronic structure
characterization of NPs. Our work provides new information to help
understand the electronic structure of NPs and show the potential
of SFG in the study of complicated semiconductor nanosystems.