Vibrational absorption from vacancy-oxygen-related complexes (VO, V2O, VO2) in irradiated silicon

Lindström, J. L.; Мурин, Л. И.; Markevich, V. P.; Hallberg, T.; Svensson, B. G.

doi:10.1016/s0921-4526(99)00447-0

Cited by 47 publications

(52 citation statements)

References 15 publications

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“…That results in the creation of VO 2 complexes which give rise to an absorption band at 895 cm -1 [1,6]. The formation of VO 2 complexes is significantly suppressed in Sn-doped Cz -Si crystals.…”

Section: Resultsmentioning

confidence: 99%

Defect‐impurity interactions in irradiated tin‐doped Cz‐Si crystals

Khirunenko

Kobzar

Pomozov

et al. 2003

phys. stat. sol. (c)

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Results of a combined infrared absorption (IR) and deep-level transient spectroscopy (DLTS) study of defects induced by irradiation with fast electrons in Sn-doped Czochralski-grown Si crystals are reported. Tin atoms were found to interact effectively with vacancy as well as with interstitial-type radiationinduced defects. Manifestations of stable tin-vacancy and tin-interstitial carbon atom complexes were observed in DLTS and IR absorption spectra. Defect transformations upon heat-treatments of the irradiated samples were studied. Tin atoms were found to be effective traps for mobile vacancy -oxygen (V -O) complexes. A local vibrational mode of a Sn -V -O complex has been identified.

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Section: Resultsmentioning

confidence: 99%

Defect‐impurity interactions in irradiated tin‐doped Cz‐Si crystals

Khirunenko

Kobzar

Pomozov

et al. 2003

phys. stat. sol. (c)

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“…Due to this movement, the bonds around the oxygen atom are compressed leading to a higher local vibrational mode (LVM) frequency in comparison to that of the neutral charge state. Additionally, two bands at 1370 and 1430 cm -1 have been attributed to a combination of the antisymmetric B 1 stretching mode and the symmetric stretching mode A 1 in the two charge states respectively of the VO defect [69].…”

Section: Oxygen-vacancy Defects In Siliconmentioning

confidence: 98%

Vacancy-oxygen defects in silicon: the impact of isovalent doping

Londos

Sgourou

Hall

et al. 2014

J Mater Sci: Mater Electron

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Silicon is the mainstream material for many nanoelectronic and photovoltaic applications. The understanding of oxygen related defects at a fundamental level is essential to further improve devices, as vacancy-oxygen defects can have a negative impact on the properties of silicon. In the present review we mainly focus on the influence of isovalent doping on the properties of A-centers in silicon. Wherever possible, we make comparisons with related materials such as silicon germanium alloys and germanium. Recent advanced density functional theory studies that provide further insights on the charge state of the A-centers and the impact of isovalent doping are also discussed in detail.

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“…Upon further irradiation, the trapping of vacancies by the Acenter results in the formation of a divacancy-oxygen V 2 O complex [6]. Annihilation of both centers, VO and V 2 O, occurs in the temperature range of 300-400 1C and is accompanied by the appearance of a number of new, more complicated vacancy-oxygen complexes [7]. Among them, the VO 2 complex, formed via the capture of a mobile Acenter by an O i atom, is the dominant one [7,8].…”

Section: Introductionmentioning

confidence: 99%